NE529 [NXP]
Voltage comparator; 电压比较器
| 型号： | NE529 |
| 厂家： | 
NXP |
| 描述： | Voltage comparator |
| 文件： | 总5页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE529
DESCRIPTION
PIN CONFIGURATIONS
The NE529 is a high-speed analog voltage comparator which, for
the first time, mates state-of-the-art Schottky diode technology with
the conventional linear process. This allows simultaneous
fabrication of high-speed TTL gates with a precision linear amplifier
on a single monolithic chip.
D, N Packages
+
+
2
1
2
3
4
5
6
7
14
13
12
11
10
9
V
V
1
NC
STROBE A
NC
INPUT A
INPUT B
NC
OUTPUT A
FEATURES
• 10ns propagation delay
GND
• Complementary output gates
• TTL or ECL compatible outputs
• Wide common-mode and differential voltage range
• Typical gain 5000
–
V
OUTPUT B
STROBE B
1
8
NC
TOP VIEW
BLOCK DIAGRAM
APPLICATIONS
• A/D conversion
STROBE A
+
V
+
V
2
1
• ECL-to-TTL interface
• TTL-to-ECL interface
• Memory sensing
OUTPUT A
INPUT A
INPUT B
OUTPUT B
• Optical data coupling
–
V
STROBE B
1
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
0 to +70°C
ORDER CODE
NE529N
DWG #
14-Pin Plastic Dual In-Line Package (DIP)
14-Pin Small Outline (SO) Package
0405B
0175D
0 to +70°C
NE529D
+
STROBE A
+
V2
V1
1K
R13
1K
R14
R1
20K
R15
4K
R16
1.5K
R17
55
Q3
D1
Q17
D10
Q18
OUTPUT A
D2
D3
R2
1.5K
R3
1.5K
R18
4K
750
R12
R10
20K
750
R11
Q26
Q15
Q13 Q14
Q4
Q5
Q12
Q19
R20
500
55
250
R21
4K
R22
1.5K
R23 R19
6.13K
R9
D4
D5
INPUT B
Q10 Q11
Q23
Q20
INPUT A
GND
Q1
Q2
Q24
R24
4K
Q22
D6
D7
OUTPUT B
Q6
Q7
Q8
Q9
Q21
Q27
Q25
D8
D9
250
R26
R25
500
R5
300
R6
300
R7
100
R8
200
R4
200
D11
V1
–
Q26
STROBE B
320
August 31, 1994
853-0902 13721
Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE529
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
+15
-15
UNIT
V
V +
1
Positive supply voltage
Negative supply voltage
Gate supply voltage
Output voltage
V -
1
V
V +
2
+7
V
V
V
V
P
+7
V
OUT
IN
Differential input voltage
±5
V
Input common mode voltage
±6
V
CM
D
1
Maximum power dissipation T =25°C (still-air)
A
N package
1420
1040
mW
mW
°C
D package
T
A
Operating temperature range
Storage temperature range
Lead soldering temperature
(10 sec max)
0 to +70
-65 to +150
T
STG
°C
T
SOLD
+300
°C
NOTES:
1. Derate above 25°C at the following rates:
N package at 11.5mW/°C
D package at 8.3mW/°C
321
August 31, 1994
Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE529
DC ELECTRICAL CHARACTERISTICS
V +=+10V, V +=+5.0V, V -=-10V, unless otherwise specified.
1
2
1
NE529
Typ
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
Max
Min
Input characteristics
Input offset voltage @ 25°C
Over temperature range
Input bias current @ 25°C
Over temperature range
Input offset current @ 25°C
Over temperature range
Common-mode voltage range
6
V
mV
10
OS
BIAS
OS
5
2
0
20
µA
50
I
I
V
V
=0V
=0V
IN
5
µA
µA
V
15
IN
V
CM
-5
Gate characteristics
Output voltage
“1” state
V
OUT
V +=4.75V, I
=-1mA
=10mA
2.7
3.3
V
V
2
SOURCE
“0” state
V +=4.75V, I
2
0.5
SINK
Strobe inputs
1
“0” Input current
V +=5.25V, V
=0.5V
=2.7V
=2.7V
-2
mA
µA
µA
V
2
STROBE
STROBE
STROBE
1
“1” Input current @ 25°C
Over temperature range
“0” input voltage
V +=5.25V, V
2
100
200
0.8
V +=5.25V, V
2
V +=4.75V
2
“1” input voltage
V +=4.75V
2.0
-18
V
2
I
Short-circuit output current
V +=5.25V, V =0V
OUT
-70
mA
SC
2
Power supply requirements
Supply voltage
V +
5
-6
10
-10
V
V
V
1
V -
1
V +
2
4.75
5
5.25
Supply current
V +=10V, V -=-10V
1 1
V +=5.25V
2
I +
Over temp.
Over temp.
Over temp.
5
mA
mA
mA
1
I -
1
10
20
I +
2
NOTES:
1. See logic function table.
AC ELECTRICAL CHARACTERISTICS
T =25°C (See AC test circuit).
A
LIMITS
Typ
SYMBOL
PARAMETER
TEST CONDITIONS
=±100mV step
UNIT
Min
Max
t
R
Transient response
Propagation delay time
Low-to-high
V
IN
t
t
12
10
2
22
20
5
ns
ns
ns
PLH
High-to-low
PHL
Delay between output A and B
Strobe delay time
turn-on time
t
t
6
6
ns
ns
ON
turn-off time
OFF
322
August 31, 1994
Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE529
TYPICAL PERFORMANCE CHARACTERISTICS
Power Dissipation
vs Supply Voltage
Input Currents vs Temperature
Supply Currents vs Temperature
12
10
160
15
14
+
I
2
+
V
= 5.0V
o
2
150
140
8
TA = 25 C
+
V
= 5.0V
2
13
BIAS CURRENT
6
4
7
6
5
4
–
I
1
130
2
0
–
V
= 10V
1
120
110
100
0.6
0.4
0.2
0
+
I
1
3
2
OFFSET CURRENT
+
V
= 10V
1
–50 –25
0
25 50 75 100
o
TEMPERATURE — C
5
6
7
8
9
10
–
) — VOLTS
–50 –25
0
25
50 75 100 125
o
+
SUPPLY VOLTAGE (V
, V
TEMPERATURE —
C
1
1
Supply Current
vs Supply Voltage
Response Time for
Various Input Overdrives
Output Propagation Delays
8
7
6
+
+
–
+
+
–
= — 10V
V
V
= 10V, V
= 5.0V
= — 10V
V
V
= 10V, V
= 5.0V
1
2
1
1
2
1
o
TA = 25 C
+
5
5
4
3
V
= 5.0V
2
OUTPUT A
OUTPUT B
OUTPUT A
4
3
–
+
T
T
1
OVERDRIVE
+
50mV
5
+
2
2
25mV
+
10mV
4
3
2
1
0
1
0
+
5mV
+
15mV
+
+100
+100
T
OVERDRIVE
INPUT B
1
INPUT A
2
1
0
0
0
–100
–100
OVERDRIVE
5
6
7
8
9
10
–
) — VOLTS
0
5
10 15 20
TIME — ns
25 30
0
5
10 15 20
TIME — ns
25 30
+
SUPPLY VOLTAGE (V
, V
1
1
RESPONSE TIME TEST CIRCUIT
(V1 +)
+10
10µF
(V2 +)
+5
10µF
+
+
.1
.1
INPUT PROBE
1K
13
OUTPUT
PROBE
+5
500Ω
1
14
5K
R
L
11
R1
3
CR1
INPUT
R2
4
+ 5
9
51Ω
51Ω
C
L
CR2
CR3
R3
6
8
1K
10
CR4
(V1 –)
–10
+5
.1
NOTES:
CR1 — CR4 = IN914
R1 selected for 15.1 divider
R2, 3 selected for 100mV at Pin 4
Input
PRR = 1MHz
Output
R
= 390Ω
L
L
P
= 50ns
w
C
= 25pF (including
T
= T = 2ns
stray capacitance
r
f
Amplitude = 3.00V
323
August 31, 1994
Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE529
range should be limited to values of 2V less than the supply voltages
(V+ and V-) up to a maximum of ±5V as supply voltages are
increased.
APPLICATIONS
One of the main features of the device is that supply voltages (V+,
V-) need not be balanced, as in the following diagrams. For proper
operation, however, negative supply (V-) should always be at least
6V more than the ground terminal (pin 6). Input Common-Mode
It is also important to note that Output A is in phase with Input A and
Output B is in phase with Input B.
LOGIC FUNCTION
V
ID
STROBE A
STROBE B
OUTPUT A
OUTPUT B
+
-
(A , B )
V
≤-V
H
H
X
L
X
H
H
L
L
H
ID
OS
-V <V <V
OS OS
Undefined
Undefined
ID
V
≥V
ID OS
H
H
L
X
H
TYPICAL APPLICATIONS
+ 5V
+ 5V
λ
R2
R2
1
6
14
11
Q
Q
1
6
14
10
Q
3
4
3
4
11
9
529N
TTL OUTPUTS
529N
R2
R1
ECL
9
Q
INPUT
10
R1
R1
R1
– 6V
– 10V
Photodiode Detector
ECL-to-TTL Interface
+ 5V
V
REF
+ 5V
3R
2K
2K
1
TTL INPUT
1
6
14
10
1
6
14
Q
Q
1103
MOS RAM
3
11
3
11
9
529N
529N
9
4
4
10
R
1
R
1
100Ω
100Ω
– 10V
– 5.2V
– 6V
MOS Memory Sense AMP
TTL-to-ECL Interface
324
August 31, 1994
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