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NUP1301-235 [NXP]

DIODE 220 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB, PLASTIC, SMD, 3 PIN, Transient Suppressor;
NUP1301-235
型号： NUP1301-235
厂家： NXP    NXP
描述：

DIODE 220 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB, PLASTIC, SMD, 3 PIN, Transient Suppressor

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NUP1301  
Ultra low capacitance ESD protection array  
Rev. 01 — 11 May 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a small  
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to  
protect one signal line in rail-to-rail configuration from the damage caused by ESD  
and other transients.  
1.2 Features  
I ESD protection of one signal line (rail-to-rail configuration)  
I Ultra low diode capacitance: Cd = 0.6 pF  
I Very low reverse leakage current: ≤ 30 nA  
I ESD protection up to 30 kV  
I IEC 61000-4-2; level 4 (ESD)  
I IEC 61000-4-5 (surge); IPP = 11 A at tp = 8/20 µs  
I AEC-Q101 qualified  
1.3 Applications  
I Telecommunication networks  
I Video line protection  
I Microcontroller protection  
I I2C-bus protection  
I Antenna power supply  
I Analog audio  
I Class-D amplifier  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Per diode  
VRRM  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
repetitive peak reverse  
voltage  
-
-
-
-
80  
V
Cd  
IR  
diode capacitance  
f = 1 MHz;  
VR = 0 V  
0.6  
-
0.75  
100  
pF  
nA  
reverse current  
VR = 80 V  
NUP1301  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
2. Pinning information  
Table 2.  
Pinning  
Symbol Description  
Pin  
1
Simplified outline  
Graphic symbol  
GND  
VCC  
I/O  
ground  
3
3
2
supply voltage  
input/output  
3
1
2
1
2
006aaa763  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
-
Description  
Version  
NUP1301  
plastic surface-mounted package; 3 leads  
SOT23  
4. Marking  
Table 4.  
Marking  
Type number  
NUP1301  
Marking code[1]  
LJ*  
[1] * = -: made in Hong Kong  
* = p: made in Hong Kong  
* = t: made in Malaysia  
* = W: made in China  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Per diode  
VRRM  
Parameter  
Conditions  
Min  
Max  
Unit  
repetitive peak reverse  
voltage  
-
80  
V
VR  
IF  
reverse voltage  
forward current  
-
-
-
80  
V
[1]  
215  
500  
mA  
mA  
IFRM  
repetitive peak forward  
current  
tp ≤ 1 ms; δ ≤ 0.25  
NUP1301_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 11 May 2009  
2 of 13  
NUP1301  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
Table 5.  
Limiting values …continued  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
square wave  
tp = 1 µs  
Min  
Max  
Unit  
[2]  
IFSM  
non-repetitive peak  
forward current  
-
-
-
4
A
A
A
tp = 1 ms  
tp = 1 s  
1
0.5  
Per device  
PPP  
[3][4]  
[3][4]  
[5][6]  
peak pulse power  
tp = 8/20 µs  
tp = 8/20 µs  
-
220  
11  
W
IPP  
peak pulse current  
total power dissipation  
junction temperature  
ambient temperature  
storage temperature  
-
A
Ptot  
Tamb ≤ 25 °C  
-
250  
150  
+150  
+150  
mW  
°C  
°C  
°C  
Tj  
-
Tamb  
Tstg  
−55  
−65  
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.  
[2] Tj = 25 °C prior to surge.  
[3] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.  
[4] Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).  
[5] Single diode loaded.  
[6] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
Table 6.  
Symbol Parameter  
VESD electrostatic discharge  
voltage  
ESD maximum ratings  
Conditions  
Min  
Max  
Unit  
[1][2]  
IEC 61000-4-2  
(contact discharge)  
-
30  
kV  
machine model  
-
-
400  
10  
V
MIL-STD-883  
kV  
(human body model)  
[1] Device stressed with ten non-repetitive ESD pulses.  
[2] Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).  
Table 7.  
ESD standards compliance  
Standard  
Conditions  
IEC 61000-4-2; level 4 (ESD)  
> 15 kV (air); > 8 kV (contact)  
> 8 kV  
MIL-STD-883; class 3B (human body model)  
NUP1301_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 11 May 2009  
3 of 13  
NUP1301  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
001aaa631  
I
PP  
001aaa630  
120  
100 %  
90 %  
100 % I ; 8 µs  
PP  
I
PP  
(%)  
80  
−t  
e
50 % I ; 20 µs  
PP  
40  
10 %  
t
t = 0.7 ns to 1 ns  
r
0
30 ns  
60 ns  
0
10  
20  
30  
40  
t (µs)  
Fig 1. 8/20 µs pulse waveform according to  
Fig 2. ESD pulse waveform according to  
IEC 61000-4-2  
IEC 61000-4-5  
6. Thermal characteristics  
Table 8.  
Thermal characteristics  
Symbol Parameter  
Per device  
Conditions  
Min  
Typ  
Max  
Unit  
[1][2]  
Rth(j-a)  
thermal resistance from  
junction to ambient  
in free air  
-
-
-
-
500  
360  
K/W  
K/W  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
[1] Single diode loaded.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
NUP1301_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 11 May 2009  
4 of 13  
NUP1301  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
7. Characteristics  
Table 9.  
Electrical characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Per diode  
Conditions  
Min  
Typ  
Max Unit  
VBR  
VF  
breakdown voltage  
forward voltage  
IR = 100 µA  
100  
-
-
V
[1]  
IF = 1 mA  
-
-
-
-
-
-
-
-
715  
855  
1
mV  
mV  
V
IF = 10 mA  
IF = 50 mA  
IF = 150 mA  
1.25  
V
IR  
reverse current  
VR = 25 V  
VR = 80 V  
-
-
-
-
-
-
30  
nA  
nA  
µA  
100  
25  
VR = 25 V;  
Tj = 150 °C  
VR = 80 V;  
Tj = 150 °C  
-
-
-
35  
µA  
Cd  
diode capacitance  
clamping voltage  
f = 1 MHz; VR = 0 V  
0.6  
0.75 pF  
Per device  
[2][3]  
[2][3]  
VCL  
IPP = 1 A  
-
-
-
-
3
V
V
IPP = 11 A  
20  
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.  
[2] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.  
[3] Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).  
NUP1301_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 11 May 2009  
5 of 13  
NUP1301  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
mbg704  
006aab132  
2
3
10  
10  
I
F
I
FSM  
(A)  
(mA)  
2
10  
10  
10  
1
(1) (2) (3) (4)  
1
−1  
−1  
10  
10  
2
3
4
1
10  
10  
10  
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
1.4  
(V)  
t
(µs)  
p
F
(1) Tamb = 150 °C  
(2) Tamb = 85 °C  
(3) Tamb = 25 °C  
(4) Tamb = −40 °C  
Based on square wave currents.  
Tj = 25 °C; prior to surge  
Fig 3. Forward current as a function of forward  
voltage; typical values  
Fig 4. Non-repetitive peak forward current as a  
function of pulse duration; typical values  
mbg446  
006aab133  
2
10  
0.8  
I
R
(1)  
(2)  
C
(pF  
d
(µA)  
10  
)
0.6  
1
−1  
10  
10  
10  
10  
10  
0.4  
(3)  
(4)  
−2  
−3  
−4  
−5  
0.2  
0
0
4
8
12  
16  
0
20  
40  
60  
80  
100  
V
(V)  
R
V
R
(V)  
(1) Tamb = 150 °C  
(2) Tamb = 85 °C  
(3) Tamb = 25 °C  
(4) Tamb = −40 °C  
Tamb = 25 °C; f = 1 MHz  
Fig 5. Reverse current as a function of reverse  
voltage; typical values  
Fig 6. Diode capacitance as a function of reverse  
voltage; typical values  
NUP1301_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 11 May 2009  
6 of 13  
NUP1301  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
ESD TESTER  
acc. to IEC 61000-4-2  
= 150 pF; R = 330 Ω  
4 GHz DIGITAL  
OSCILLOSCOPE  
C
Z
Z
RG 223/U  
50 Ω coax  
R
Z
450 Ω  
10×  
ATTENUATOR  
C
Z
50 Ω  
DUT  
(DEVICE  
UNDER  
TEST)  
vertical scale = 10 V/div  
vertical scale = 10 A/div  
horizontal scale = 15 ns/div  
horizontal scale = 15 ns/div  
GND  
GND  
clamped +8 kV ESD pulse waveform  
(IEC 61000-4-2 network), pin 3 to 1 and 2  
unclamped +8 kV ESD pulse waveform  
(IEC 61000-4-2 network)  
vertical scale = 10 V/div  
horizontal scale = 15 ns/div  
vertical scale = 10 A/div  
horizontal scale = 15 ns/div  
GND  
GND  
clamped −8 kV ESD pulse waveform  
(IEC 61000-4-2 network), pin 3 to 1 and 2  
unclamped −8 kV ESD pulse waveform  
(IEC 61000-4-2 network)  
006aab567  
Fig 7. ESD clamping test setup and waveforms  
NUP1301_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 11 May 2009  
7 of 13  
NUP1301  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
8. Application information  
Protection of a single (high-speed) data line in rail-to-rail configuration. The protected data  
line is connected to pin 3. Pin 1 is connected to ground (GND) and pin 2 is connected to  
the supply rail (supply voltage VCC.) When the transient voltage exceeds the forward  
voltage drop of one diode, the transient is directed either to the supply rail or to GND.  
The advantages of these solutions are: low line capacitance (0.6 pF typically), fast  
response time, and low clamping voltage.  
V
V
CC  
CC  
D1  
NUP1301  
Audio  
interface  
D2  
NUP1301  
006aab568  
Fig 8. Typical application for the protection of one signal line  
Circuit board layout and protection device placement:  
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)  
and surge transients. The following guidelines are recommended:  
1. Place the NUP1301 as close to the input terminal or connector as possible.  
2. The path length between the NUP1301 and the protected line should be minimized.  
3. Keep parallel signal paths to a minimum.  
4. Avoid running protected conductors in parallel with unprotected conductors.  
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and  
ground loops.  
6. Minimize the length of the transient return path to ground.  
7. Avoid using shared transient return paths to a common ground point.  
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground  
vias.  
9. Test information  
9.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
NUP1301_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 11 May 2009  
8 of 13  
NUP1301  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
10. Package outline  
3.0  
2.8  
1.1  
0.9  
3
0.45  
0.15  
2.5 1.4  
2.1 1.2  
1
2
0.48  
0.38  
0.15  
0.09  
1.9  
Dimensions in mm  
04-11-04  
Fig 9. Package outline SOT23 (TO-236AB)  
11. Packing information  
Table 10. Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
3000  
-215  
10000  
NUP1301  
SOT23  
4 mm pitch, 8 mm tape and reel  
-235  
[1] For further information and the availability of packing methods, see Section 15.  
NUP1301_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 11 May 2009  
9 of 13  
NUP1301  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
12. Soldering  
3.3  
2.9  
1.9  
solder lands  
solder resist  
2
3
1.7  
solder paste  
occupied area  
0.6  
0.7  
(3×)  
(3×)  
Dimensions in mm  
0.5  
(3×)  
0.6  
(3×)  
1
sot023_fr  
Fig 10. Reflow soldering footprint SOT23 (TO-236AB)  
2.2  
1.2  
(2×)  
1.4  
(2×)  
solder lands  
solder resist  
occupied area  
2.6  
4.6  
Dimensions in mm  
1.4  
preferred transport direction during soldering  
2.8  
4.5  
sot023_fw  
Fig 11. Wave soldering footprint SOT23 (TO-236AB)  
NUP1301_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 11 May 2009  
10 of 13  
NUP1301  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
13. Revision history  
Table 11. Revision history  
Document ID  
Release date  
20090511  
Data sheet status  
Change notice  
Supersedes  
NUP1301_1  
Product data sheet  
-
-
NUP1301_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 11 May 2009  
11 of 13  
NUP1301  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
14. Legal information  
14.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
14.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
14.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
14.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
15. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
NUP1301_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 11 May 2009  
12 of 13  
NUP1301  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
16. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Application information. . . . . . . . . . . . . . . . . . . 8  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8  
Quality information . . . . . . . . . . . . . . . . . . . . . . 8  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Packing information. . . . . . . . . . . . . . . . . . . . . . 9  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11  
3
4
5
6
7
8
9
9.1  
10  
11  
12  
13  
14  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
14.1  
14.2  
14.3  
14.4  
15  
16  
Contact information. . . . . . . . . . . . . . . . . . . . . 12  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 11 May 2009  
Document identifier: NUP1301_1  

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NUP1301U

 200W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, PLASTIC, SC-70, 3 PIN
NXP

NUP1301U

 Ultra low capacitance ESD protection arrayProduction
NEXPERIA

NUP1301U,115

 NUP1301U - Ultra low capacitance ESD protection array SC-70 3-Pin
NXP

NUP1301U,135

 DIODE 200 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, PLASTIC, SC-70, 3 PIN, Transient Suppressor
NXP

NUP1301U-Q

 Ultra low capacitance ESD protection arrayProduction
NEXPERIA

NUP1301U115

 Ultra low capacitance ESD protection array
NXP
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