NX3020NAKS_15 [NXP]
30 V, 180 mA dual N-channel Trench MOSFET;型号: | NX3020NAKS_15 |
厂家: | NXP |
描述: | 30 V, 180 mA dual N-channel Trench MOSFET |
文件: | 总15页 (文件大小:287K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
11 November 2013
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection
•
•
•
•
Low threshold voltage
3. Applications
Relay driver
•
•
•
•
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
30
V
-20
-
20
V
VGS = 4.5 V; Tamb = 25 °C
[1]
180
mA
Static characteristics (per transistor)
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 100 mA; Tj = 25 °C
-
2.7
4.5
Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D2
D1
6
5
4
3
1
2
3
4
5
6
S1
G1
D2
S2
G2
D1
source TR1
gate TR1
G1
drain TR2
source TR2
gate TR2
G2
1
2
TSSOP6 (SOT363)
S1
S2
drain TR1
017aaa256
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOT363
NX3020NAKS
TSSOP6
plastic surface-mounted package; 6 leads
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
NX3020NAKS
Ua%
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
30
V
-20
20
V
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
[1]
[1]
-
-
-
-
-
180
110
720
260
280
mA
mA
mA
mW
mW
IDM
Ptot
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
total power dissipation
[2]
[1]
NX3020NAKS
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Product data sheet
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Max
Unit
Tsp = 25 °C
-
1100
mW
Source-drain diode
IS
source current
Tamb = 25 °C
Tamb = 25 °C
-
180
mA
Per device
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
[2]
-
375
150
150
150
mW
°C
-55
-55
-65
Tamb
Tstg
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa001
017aaa002
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
(°C)
- 25
25
75
125
175
(°C)
T
T
amb
amb
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
Fig. 2. Normalized continuous drain current as a
function of ambient temperature
NX3020NAKS
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Product data sheet
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
017aaa673
1
Limit R
= V /I
DS
DSon
D
t
= 100 µs
= 1 ms
p
I
D
(A)
t
p
-1
-2
-3
10
t
= 10 ms
p
t
= 100 ms
p
DC; T = 25 °C
sp
10
10
DC; T
= 25 °C;
amb
drain mounting pad 1 cm
2
-1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
390
380
480
430
K/W
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
-
-
110
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NX3020NAKS
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Product data sheet
11 November 2013
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
017aaa674
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
0.25
2
10
0.1
0.05
0
0.02
0.01
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa675
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.25
0.1
0.33
0.2
2
10
0.05
0
0.02
0.01
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX3020NAKS
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Product data sheet
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
drain-source
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
V
breakdown voltage
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
0.8
1.2
1.5
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 100 mA; Tj = 25 °C
VGS = 10 V; ID = 100 mA; Tj = 150 °C
VGS = 4.5 V; ID = 100 mA; Tj = 25 °C
VGS = 2.5 V; ID = 10 mA; Tj = 25 °C
VDS = 10 V; ID = 150 mA; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
µA
µA
µA
µA
Ω
-
10
3.5
3.5
1
IGSS
gate leakage current
-
-
-
-
1
-
0.5
0.5
4.5
9.2
5.2
13
-
-
RDSon
drain-source on-state
resistance
2.7
5.5
3
Ω
Ω
4
Ω
gfs
forward
320
mS
transconductance
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 15 V; ID = 150 mA; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.34
0.11
0.06
13
0.44
nC
nC
nC
pF
pF
pF
-
-
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
20
-
Coss
Crss
2.6
reverse transfer
capacitance
1.1
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 20 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
5
10
-
ns
ns
ns
ns
5
turn-off delay time
fall time
34
17
68
-
Source-drain diode (per transistor)
VSD
source-drain voltage
IS = 115 mA; VGS = 0 V; Tj = 25 °C
0.47
0.7
1.2
V
NX3020NAKS
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
017aaa663
017aaa664
-3
0.5
10
10 V
3.5 V
I
D
4.5 V
(A)
I
D
(A)
0.4
3 V
-4
-5
-6
10
0.3
0.2
0.1
0
min
typ
max
2.5 V
10
10
V
= 2 V
GS
0
1
2
3
4
0
0.5
1.0
1.5
2.0
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa665
017aaa666
10
12
2 V
2.5 V
3 V
R
DSon
(Ω)
R
DSon
(Ω)
8
8
6
4
2
0
T = 150 °C
j
3.5 V
4.5 V
4
V
= 10 V
GS
T = 25 °C
j
0
0
0.1
0.2
0.3
0.4
0.5
0
2
4
6
8
10
(V)
I
(A)
V
GS
D
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values
ID = 0.15 A
NX3020NAKS
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Product data sheet
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
017aaa667
017aaa668
0.4
2.5
a
I
D
(A)
2.0
1.5
1.0
0.5
0
0.3
0.2
0.1
0
T = 150 °C
j
T = 25 °C
j
0
1
2
3
4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa670
017aaa669
2
2.0
10
V
GS(th)
(V)
C
(pF)
C
iss
1.5
1.0
0.5
0
max
typ
10
C
C
oss
min
1
rss
-1
10
-1
2
10
1
10
10
-60
0
60
120
180
V
(V)
T (°C)
j
DS
f = 1 MHz; VGS = 0 V
ID = 0.25 mA; VDS = VGS
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
NX3020NAKS
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Product data sheet
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
017aaa671
10
V
DS
V
GS
(V)
I
8
6
4
2
0
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
0
0.2
0.4
0.6
0.8
Q
G
(nC)
ID = 0.15 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa672
0.5
I
S
(A)
0.4
0.3
0.2
0.1
0
T = 150 °C
j
T = 25 °C
j
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
NX3020NAKS
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
12. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
L
w
M B
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
p
c
D
e
e
H
L
Q
v
w
y
E
p
1
E
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT363
SC-88
Fig. 18. Package outline TSSOP6 (SOT363)
NX3020NAKS
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Product data sheet
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
13. Soldering
2.65
solder lands
0.4 (2×)
1.5
2.35
0.6
0.5
solder resist
(4×)
(4×)
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig. 19. Reflow soldering footprint for TSSOP6 (SOT363)
1.5
solder lands
solder resist
occupied area
2.5
0.3
4.5
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig. 20. Wave soldering footprint for TSSOP6 (SOT363)
NX3020NAKS
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Product data sheet
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
NX3020NAKS v.3
Modifications:
20131111
Product data sheet
-
NX3020NAKS v.2
Marking code corrected
•
NX3020NAKS v.2
NX3020NAKS v.1
20131029
20120706
Product data sheet
Product data sheet
-
-
NX3020NAKS v.1
-
NX3020NAKS
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Product data sheet
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
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lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
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Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
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Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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the accuracy or completeness of information included herein and shall have
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is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
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Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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NX3020NAKS
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11 November 2013
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NX3020NAKS
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
11 November 2013
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NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................6
Test information .....................................................9
Package outline ................................................... 10
Soldering .............................................................. 11
Revision history ...................................................12
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
15.1
15.2
15.3
15.4
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 November 2013
NX3020NAKS
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
11 November 2013
15 / 15
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