NX3L1G66GM-H [NXP]
暂无描述;型号: | NX3L1G66GM-H |
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NX3L1G66
Low-voltage analog switch
Rev. 01 — 3 January 2008
Product data sheet
1. General description
The NX3L1G66 provides one single pole, single-throw analog switch function. It has two
input/output terminals (Yand Z) and an active HIGH enable input pin (E). When E is LOW,
the analog switch is turned off.
Schmitt trigger action at the enable input (E) makes the circuit tolerant to slower input rise
and fall times across the entire VCC range from 1.4 V to 3.6 V.
The NX3L1G66 allows signals with amplitude up to VCC to be transmitted from Y to Z; or
from Z to Y. Its low ON resistance (0.5 Ω) and flatness (0.13 Ω) ensures minimal
attenuation and distortion of transmitted signals.
2. Features
■ Wide supply voltage range from 1.4 V to 3.6 V
■ Very low ON resistance (peak):
◆ 1.6 Ω (typical) at VCC = 1.4 V
◆ 1.0 Ω (typical) at VCC = 1.65 V
◆ 0.55 Ω (typical) at VCC = 2.3 V
◆ 0.50 Ω (typical) at VCC = 2.7 V
■ High noise immunity
■ ESD protection:
◆ HBM JESD22-A114E Class 3A exceeds 7500 V
◆ MM JESD22-A115-A exceeds 200 V
◆ CDM AEC-Q100-011 revision B exceeds 1000 V
■ CMOS low-power consumption
■ Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
■ Direct interface with TTL levels at 3.0 V
■ Control input accepts voltages above supply voltage
■ High current handling capability (350 mA continuous current under 3.3 V supply)
■ Specified from −40 °C to +85 °C and from −40 °C to +125 °C
3. Applications
■ Cell phone
■ PDA
■ Portable media player
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
4. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
Version
NX3L1G66GM
−40 °C to +125 °C
XSON6 plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1 × 1.45 × 0.5 mm
5. Marking
Table 2.
Marking
Type number
Marking code
NX3L1G66GM
DL
6. Functional diagram
Y
Z
E
Z
Y
E
001aah372
001aag487
Fig 1. Logic symbol
Fig 2. Logic diagram
7. Pinning information
7.1 Pinning
NX3L1G66
Y
Z
1
2
3
6
5
4
V
CC
n.c.
E
GND
001aah444
Transparent top view
Fig 3. Pin configuration SOT886 (XSON6)
NX3L1G66_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2008
2 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
7.2 Pin description
Table 3.
Symbol
Y
Pin description
Pin
1
Description
independent input or output
independent input or output
ground (0 V)
Z
2
GND
E
3
4
enable input (active HIGH)
not connected
n.c.
5
VCC
6
supply voltage
8. Functional description
Table 4.
Function table[1]
Input E
Switch
L
OFF-state
ON-state
H
[1] H = HIGH voltage level;
L = LOW voltage level
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
VCC
VI
Parameter
Conditions
Min
−0.5
−0.5
−0.5
−50
-
Max
+4.6
+4.6
Unit
V
supply voltage
input voltage
[1]
[2]
V
VSW
IIK
switch voltage
input clamping current
VCC + 0.5 V
VI < −0.5 V
-
mA
ISK
switch clamping current VI < −0.5 V or VI > VCC + 0.5 V
±50
±350
mA
mA
ISW
switch current
VSW > −0.5 V or VSW < VCC + 0.5 V;
-
source or sink current
VSW > −0.5 V or VSW < VCC + 0.5 V;
pulsed at 1 ms duration, < 10% duty cycle;
peak current
-
±500
mA
Tstg
Ptot
storage temperature
total power dissipation
−65
+150
°C
[3]
Tamb = −40 °C to +125 °C
-
250
mW
[1] The minimum input voltage rating may be exceeded if the input current rating is observed.
[2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed.
[3] For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K.
NX3L1G66_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2008
3 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
10. Recommended operating conditions
Table 6.
Recommended operating conditions
Symbol Parameter
Conditions
Min
1.4
0
Typ
Max
3.6
Unit
V
VCC
VI
supply voltage
-
-
-
-
-
input voltage
enable input E
3.6
V
[1]
[2]
VSW
Tamb
∆t/∆V
switch voltage
0
VCC
+125
200
V
ambient temperature
input transition rise and fall rate
−40
-
°C
ns/V
VCC = 1.4 V to 3.6 V
[1] To avoid sinking GND current from of terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch
must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Y. In this case, there is no limit
for the voltage drop across the switch.
[2] Applies to control signal levels.
11. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min
Typ
Max
Min
Max
Max
(85 °C) (125 °C)
VIH
HIGH-level
input voltage
VCC = 1.4 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VCC = 1.4 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
0.65VCC
-
-
-
-
-
-
-
-
0.65VCC
-
-
-
-
-
-
V
1.7
-
1.7
V
2.0
-
0.35VCC
0.7
2.0
V
VIL
LOW-level
input voltage
-
-
-
-
-
-
-
-
0.35VCC 0.35VCC
V
0.7
0.8
0.7
0.8
±1
V
0.8
V
II
input leakage enable input E;
-
±0.5
µA
current
VI = GND to 3.6 V;
CC = 1.4 V to 3.6 V
V
IS(OFF)
IS(ON)
ICC
OFF-state
leakage
current
Y port;
CC = 1.4 V to 3.6 V;
see Figure 4
-
-
-
-
-
-
±5
±5
-
-
-
±50
±50
690
±500 nA
±500 nA
6000 nA
V
ON-state
leakage
current
Z port;
VCC = 1.4 V to 3.6 V;
see Figure 5
supply current VI = VCC or GND;
100
VCC = 3.6 V;
VSW = GND or VCC
CI
input
capacitance
-
-
-
1.0
35
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
CS(OFF) OFF-state
capacitance
CS(ON)
ON-state
110
capacitance
NX3L1G66_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2008
4 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
11.1 Test circuits
V
V
CC
CC
E
Z
E
Z
V
V
IH
IL
Y
Y
I
I
I
S
S
S
GND
GND
V
V
V
V
O
I
O
I
001aag488
001aag489
VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V.
VI = 0.3 V or VCC − 0.3 V; VO = open circuit.
Fig 4. Test circuit for measuring OFF-state leakage
current
Fig 5. Test circuit for measuring ON-state leakage
current
11.2 ON resistance
Table 8.
ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 7 to Figure 12.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min Typ[1] Max
Min
Max
RON(peak) ON resistance (peak)
VI = GND to VCC;
I
SW = 100 mA;
see Figure 6
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 2.7 V
-
-
-
-
1.6
1.0
3.7
1.6
-
-
-
-
4.1
1.7
0.9
0.9
Ω
Ω
Ω
Ω
0.55
0.5
0.8
0.75
[2]
RON(flat)
ON resistance (flatness) VI = GND to VCC;
I
SW = 100 mA
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 2.7 V
-
-
-
-
1.0
0.5
3.3
1.2
0.3
0.3
-
-
-
-
3.6
1.3
Ω
Ω
Ω
Ω
0.15
0.13
0.35
0.35
[1] Typical values are measured at Tamb = 25 °C.
[2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and
temperature.
NX3L1G66_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2008
5 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
11.3 ON resistance test circuit and graphs
001aag564
1.6
R
ON
(Ω)
1.2
V
SW
(1)
(2)
0.8
0.4
0
V
CC
E
Z
V
IH
Y
(3) (4)
(5)
GND
V
I
I
SW
0
1
2
3
4
V (V)
I
001aah375
RON = VSW / ISW
.
(1) VCC = 1.5 V.
(2) VCC = 1.8 V.
(3) VCC = 2.5 V.
(4) VCC = 2.7 V.
(5) VCC = 3.3 V.
Measured at Tamb = 25 °C.
Fig 6. Test circuit for measuring ON resistance
Fig 7. Typical ON resistance as a function of input
voltage
001aag565
001aag566
1.6
1.0
R
(Ω)
ON
R
(Ω)
ON
0.8
1.2
(1)
(2)
(3)
(4)
0.6
0.4
0.2
0
(1)
(2)
(3)
(4)
0.8
0.4
0
0
1
2
3
0
1
2
3
V (V)
I
V (V)
I
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
Fig 8. ON resistance as a function of input voltage;
CC = 1.5 V
Fig 9. ON resistance as a function of input voltage;
VCC = 1.8 V
V
NX3L1G66_1
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Product data sheet
Rev. 01 — 3 January 2008
6 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
001aag567
001aag568
1.0
1.0
R
ON
R
ON
(Ω)
(Ω)
0.8
0.8
0.6
0.4
0.2
0
0.6
0.4
0.2
0
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
0
1
2
3
0
1
2
3
V (V)
V (V)
I
I
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
Fig 10. ON resistance as a function of input voltage;
CC = 2.5 V
Fig 11. ON resistance as a function of input voltage;
VCC = 2.7 V
V
001aag569
1.0
R
ON
(Ω)
0.8
0.6
0.4
0.2
0
(1)
(2)
(3)
(4)
0
1
2
3
4
V (V)
I
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
Fig 12. ON resistance as a function of input voltage; VCC = 3.3 V
NX3L1G66_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2008
7 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
12. Dynamic characteristics
Table 9.
Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 14.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min Typ[1] Max
Min
Max
Max
(85 °C) (125 °C)
ten
enable time
disable time
E to Z or Y; see Figure 13
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
E to Z or Y; see Figure 13
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
-
-
-
-
27
22
17
14
41
27
20
18
-
-
-
-
44
34
27
24
48
36
30
26
ns
ns
ns
ns
tdis
-
-
-
-
9
7
4
4
18
13
8
-
-
-
-
19
15
9
21
16
10
9
ns
ns
ns
ns
8
8
[1] Typical values are measured at Tamb = 25 °C and VCC = 1.5 V, 1.8 V, 2.5 V and 3.3 V respectively.
12.1 Waveform and test circuits
V
I
nE input
V
M
GND
t
t
en
dis
V
OH
V
V
X
X
nY output
OFF to HIGH
HIGH to OFF
GND
switch
switch
switch
disabled
enabled
disabled
001aah376
Measurement points are given in Table 10.
Logic level: VOH is the typical output voltage that occurs with the output load.
Fig 13. Enable and disable times
Table 10. Measurement points
Supply voltage
VCC
Input
VM
Output
VX
1.4 V to 3.6 V
0.5VCC
0.9VOH
NX3L1G66_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2008
8 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
V
CC
E
Y/Z
Z/Y
G
C
L
V
V
V
R
L
V
= 1.5 V
EXT
I
O
001aah377
Test data is given in Table 11.
Definitions test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
VEXT = External voltage for measuring switching times.
Fig 14. Load circuit for switching times
Table 11. Test data
Supply voltage
VCC
Input
VI
Load
CL
tr, tf
≤ 2.5 ns
RL
1.4 V to 3.6 V
VCC
35 pF
50 Ω
12.2 Additional dynamic characteristics
Table 12. Additional dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise
specified); tr = tf ≤ 2.5 ns.
Symbol Parameter
Conditions
25 °C
Unit
Min
Typ
Max
[1]
THD
total harmonic
distortion
fi = 20 Hz to 20 kHz; RL = 32 Ω; see Figure 15
VCC = 1.4 V; VI = 1 V (p-p)
VCC = 1.65 V; VI = 1.2 V (p-p)
VCC = 2.3 V; VI = 1.5 V (p-p)
VCC = 2.7 V; VI = 2 V (p-p)
RL = 50 Ω; see Figure 16
-
-
-
-
0.15
0.10
-
-
-
-
%
%
%
%
0.015
0.024
[1]
[1]
f(−3dB)
−3 dB frequency
response
VCC = 1.4 V to 3.6 V
-
-
60
-
-
MHz
dB
αiso
isolation (OFF-state)
fi = 100 kHz; RL = 50 Ω; see Figure 17
VCC = 1.4 V to 3.6 V
−90
Vct
crosstalk voltage
between digital inputs and switch;
fi = 1 MHz; CL = 50 pF; RL = 50 Ω; see Figure 18
VCC = 1.4 V to 3.6 V
-
0.16
-
V
NX3L1G66_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2008
9 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
Table 12. Additional dynamic characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise
specified); tr = tf ≤ 2.5 ns.
Symbol Parameter
Conditions
25 °C
Unit
Min
Typ
Max
Qinj
charge injection
fi = 1 MHz; CL = 0.1 nF; RL = 1 MΩ; Vgen = 0 V;
R
gen = 0 Ω; see Figure 19
VCC = 1.5 V
-
-
-
-
3
3
3
3
-
-
-
-
pC
pC
pC
pC
VCC = 1.8 V
VCC = 2.5 V
VCC = 3.3 V
[1] fi is biased at 0.5VCC
.
12.3 Test circuits
V
0.5V
CC
CC
E
V
R
L
IH
Y/Z
Z/Y
f
D
i
001aah378
Fig 15. Test circuit for measuring total harmonic distortion
V
0.5V
CC
CC
E
V
R
L
IH
Y/Z
Z/Y
f
dB
i
001aah379
Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3 dB.
Fig 16. Test circuit for measuring the frequency response when channel is in ON-state
NX3L1G66_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2008
10 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
0.5V
V
0.5V
CC
R
CC
CC
R
E
V
IL
L
L
Y/Z
Z/Y
f
dB
i
001aah380
Adjust fi voltage to obtain 0 dBm level at input.
Fig 17. Test circuit for measuring isolation (OFF-state)
V
CC
E
Y/Z
Z/Y
G
V
R
L
R
L
C
L
V
V
O
I
0.5V
0.5V
CC
CC
001aah383
a. Test circuit
logic
input (E)
off
on
off
V
O
V
ct
001aah381
b. Input and output pulse definitions
Fig 18. Test circuit for measuring crosstalk voltage between digital inputs and switch
NX3L1G66_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2008
11 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
V
CC
E
R
gen
Y/Z
Z/Y
G
C
L
V
V
V
R
L
V
gen
I
O
GND
001aah385
a. Test circuit
logic
input (E)
off
on
off
V
O
V
O
001aah384
b. Input and output pulse definitions
Definition: Qinj = ∆VO × CL.
∆VO = output voltage variation.
Rgen = generator resistance.
Vgen = generator voltage.
Fig 19. Test circuit for measuring charge injection
NX3L1G66_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2008
12 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
13. Package outline
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
SOT886
b
1
2
3
4×
(2)
L
L
1
e
6
5
4
e
1
e
1
6×
(2)
A
A
1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
A
1
UNIT
b
D
E
e
e
L
L
1
1
max max
0.25
0.17
1.5
1.4
1.05
0.95
0.35 0.40
0.27 0.32
mm
0.5 0.04
0.6
0.5
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
04-07-15
04-07-22
SOT886
MO-252
Fig 20. Package outline SOT886 (XSON6)
NX3L1G66_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2008
13 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
14. Abbreviations
Table 13. Abbreviations
Acronym
CDM
CMOS
DUT
Description
Charged Device Model
Complementary Metal Oxide Semiconductor
Device Under Test
ESD
ElectroStatic Discharge
Human Body Model
HBM
MM
Machine Model
TTL
Transistor-Transistor Logic
15. Revision history
Table 14. Revision history
Document ID
Release date
20080103
Data sheet status
Change notice
Supersedes
NX3L1G66_1
Product data sheet
-
-
NX3L1G66_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2008
14 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
16.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
16.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
17. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
NX3L1G66_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2008
15 of 16
NX3L1G66
NXP Semiconductors
Low-voltage analog switch
18. Contents
1
2
3
4
5
6
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
7
7.1
7.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
8
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Recommended operating conditions. . . . . . . . 4
9
10
11
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
ON resistance. . . . . . . . . . . . . . . . . . . . . . . . . . 5
ON resistance test circuit and graphs. . . . . . . . 6
11.1
11.2
11.3
12
Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
Waveform and test circuits . . . . . . . . . . . . . . . . 8
Additional dynamic characteristics . . . . . . . . . . 9
Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.1
12.2
12.3
13
14
15
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
16.1
16.2
16.3
16.4
17
18
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 January 2008
Document identifier: NX3L1G66_1
相关型号:
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