OT406

更新时间:2024-09-18 07:43:53
品牌:NXP
描述:Four-quadrant triac, enhanced noise immunity

OT406 概述

Four-quadrant triac, enhanced noise immunity 四象限三端双向可控硅,增强抗噪声能力 TRIAC

OT406 规格参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-73包装说明:PLASTIC, SC-73, 4 PIN
针数:4Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.74
Is Samacsys:N其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
换向电压的临界上升率-最小值:0.5 V/us关态电压最小值的临界上升速率:10 V/us
最大直流栅极触发电流:5 mA最大直流栅极触发电压:1.3 V
最大维持电流:7 mAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3最大漏电流:0.5 mA
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大均方根通态电流:1 A
断态重复峰值电压:600 V子类别:TRIACs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

OT406 数据手册

通过下载OT406数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
OT406  
Four-quadrant triac, enhanced noise immunity  
Rev. 01 — 19 May 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Passivated sensitive gate triac in a SOT223 surface-mountable plastic package  
1.2 Features  
I Sensitive gate  
I Gate triggering in four quadrants  
I Direct interfacing to low power gate drive  
circuits  
I Direct interfacing to logic level ICs  
I Enhanced immunity to voltage  
I Blocking voltage to 600 V  
transients and noise  
1.3 Applications  
I Home appliances  
I Low power motor control  
I Low power loads in industrial process  
control  
I Low power AC fan speed controllers  
1.4 Quick reference data  
I VDRM 600 V  
I IGT 3 mA  
I ITSM 12.5 A (t = 20 ms)  
I IT(RMS) 1 A  
I IGT 5 mA (T2G+)  
2. Pinning information  
Table 1.  
Pinning  
Pin  
1
Description  
Simplified outline  
Graphic symbol  
main terminal 1 (T1)  
main terminal 2 (T2)  
gate (G)  
4
T2  
T1  
G
2
3
sym051  
4
mounting base; main terminal 2 (T2)  
1
2
3
SOT223  
OT406  
NXP Semiconductors  
Four-quadrant triac, enhanced noise immunity  
3. Ordering information  
Table 2.  
Ordering information  
Type number  
Package  
Name  
Description  
plastic surface-mounted package with increased heatsink; 4 leads  
Version  
OT406  
SC-73  
SOT223  
4. Limiting values  
Table 3.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDRM  
Parameter  
Conditions  
Min  
Max  
600  
600  
1
Unit  
repetitive peak off-state voltage  
repetitive peak reverse voltage  
RMS on-state current  
-
-
-
V
V
A
VRRM  
IT(RMS)  
full sine wave; Tsp 103 °C; see  
Figure 4 and 5  
ITSM  
non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to  
surge; see Figure 2 and 3  
t = 20 ms  
-
-
-
12.5  
13.8  
1.28  
A
t = 16.7 ms  
A
A2s  
I2t  
I2t for fusing  
tp = 10 ms  
dIT/dt  
rate of rise of on-state current  
ITM = 1 A; IG = 20 mA;  
dIG/dt = 0.2 A/µs  
T2+ G+  
T2+ G−  
T2G−  
T2G+  
-
50  
50  
50  
10  
1
A/µs  
A/µs  
A/µs  
A/µs  
A
-
-
-
IGM  
peak gate current  
peak gate power  
-
PGM  
PG(AV)  
Tstg  
Tj  
-
2
W
average gate power  
storage temperature  
junction temperature  
over any 20 ms period  
-
0.1  
+150  
125  
W
40  
°C  
-
°C  
OT406_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2008  
2 of 13  
OT406  
NXP Semiconductors  
Four-quadrant triac, enhanced noise immunity  
003aac259  
2.0  
conduction form  
Ptot  
angle  
factor  
a
(W)  
(degrees)  
1.6  
1.2  
0.8  
0.4  
0.0  
30  
60  
90  
120  
180  
4
α = 180°  
2.8  
2.2  
1.9  
1.57  
α
120°  
90°  
60°  
30°  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
IT(RMS) (A)  
α = conduction angle  
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values  
003aac260  
16  
ITSM  
(A)  
12  
8
I
I
TSM  
t
T
4
1/f  
= 25 °C max  
T
j(init)  
0
1
10  
102  
103  
number of cycles  
f = 50 Hz  
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum  
values  
OT406_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2008  
3 of 13  
OT406  
NXP Semiconductors  
Four-quadrant triac, enhanced noise immunity  
003aac262  
103  
I
I
TSM  
t
T
ITSM  
(A)  
t
p
102  
T
= 25 °C max  
j(init)  
(1)  
(2)  
10  
1
10-5  
10-4  
10-3  
10-2  
10-1  
tp (s)  
tp 20 ms  
(1) dIT/dt limit  
(2) T2G+ quadrant limit  
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values  
003aac269  
003aac270  
8
1.2  
IT(RMS)  
(A)  
IT(RMS)  
(A)  
6
4
2
0.8  
0.4  
0
0
-50  
10-2  
10-1  
1
10  
0
50  
100  
150  
sp (°C)  
T
surge duration (s)  
f = 50 Hz  
Tsp = 103 °C  
Fig 4. RMS on-state current as a function of surge  
duration; maximum values  
Fig 5. RMS on-state current as a function of solder  
point temperature; maximum values  
OT406_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2008  
4 of 13  
OT406  
NXP Semiconductors  
Four-quadrant triac, enhanced noise immunity  
5. Thermal characteristics  
Table 4.  
Symbol  
Rth(j-sp)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
thermal resistance from junction to full cycle; see Figure 6  
solder point  
-
-
15  
K/W  
Rth(j-a)  
thermal resistance from junction to full cycle  
ambient  
for minimum footprint  
see Figure 13  
-
-
156  
70  
-
-
K/W  
K/W  
for pad area  
see Figure 14  
003aac210  
102  
Zth(j-sp)  
(K/W)  
10  
1
P
10-1  
10-2  
t
tp  
10-1  
1
10  
10-5  
10-4  
10-3  
10-2  
tp (s)  
Fig 6. Transient thermal impedance from junction to solder point as a function of pulse width  
OT406_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2008  
5 of 13  
OT406  
NXP Semiconductors  
Four-quadrant triac, enhanced noise immunity  
6. Static characteristics  
Table 5.  
Static characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
IGT gate trigger current  
Min  
Typ  
Max  
Unit  
VD = 12 V; IT = 0.1 A; see Figure 8  
T2+ G+  
-
-
-
-
-
-
-
-
3
3
3
5
mA  
mA  
mA  
mA  
T2+ G−  
T2G−  
T2G+  
IL  
latching current  
VD = 12 V; IG = 0.1 A; see Figure 10  
T2+ G+  
-
-
7
mA  
mA  
mA  
mA  
mA  
V
T2+ G−  
-
-
20  
7
T2G−  
-
-
T2G+  
-
-
7
IH  
holding current  
VD = 12 V; IG = 0.1 A; see Figure 11  
IT = 1 A; see Figure 9  
VD = 12 V; IT = 0.1 A; see Figure 7  
VD = VDRM; IT = 0.1 A; Tj = 125 °C  
VD = VDRM(max); Tj = 125 °C  
-
-
7
VT  
VGT  
on-state voltage  
gate trigger voltage  
-
1.3  
1.6  
1.3  
-
-
-
-
-
V
0.2  
-
V
ID  
off-state current  
0.5  
mA  
OT406_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2008  
6 of 13  
OT406  
NXP Semiconductors  
Four-quadrant triac, enhanced noise immunity  
7. Dynamic characteristics  
Table 6.  
Dynamic characteristics  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
dVD/dt  
rate of rise of off-state voltage VDM = 0.67VDRM(max); Tj = 110 °C; exponential  
10  
-
-
V/µs  
waveform; gate open circuit  
dVcom/dt rate of change of  
commutating voltage  
VDM = 400 V; Tj = 110 °C; ITM = 1 A;  
dIcom/dt = 0.44 A/ms  
0.5  
-
-
V/µs  
003aaa209  
003aaa205  
1.6  
4
V
I
GT  
GT  
I
GT(25°C)  
V
GT(25°C)  
1.2  
3
(1)  
(2)  
(3)  
(4)  
0.8  
0.4  
0
2
1
0
−50  
0
50  
100  
150  
50  
0
50  
100  
150  
T (°C)  
j
T (°C)  
j
(1) T2+ G+  
(2) T2+ G−  
(3) T2G−  
(4) T2G+  
Fig 7. Normalized gate trigger voltage as a function  
of junction temperature  
Fig 8. Normalized gate trigger current as a function  
of junction temperature  
OT406_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2008  
7 of 13  
OT406  
NXP Semiconductors  
Four-quadrant triac, enhanced noise immunity  
003aac258  
003aaa203  
3
2
IT  
I
L
(A)  
I
L(25°C)  
1.6  
2
1.2  
0.8  
(1)  
(2)  
(3)  
1
0.4  
0
0
50  
0
0.4  
0.8  
1.2  
1.6  
2
0
50  
100  
150  
V
T (V)  
T (°C)  
j
Vo = 1.254 V; Rs = 0.31 Ω  
(1) Tj = 125 °C; typical values  
(2) Tj = 125 °C; maximum values  
(3) Tj = 25 °C; maximum values  
Fig 9. On-state current as a function of on-state  
voltage  
Fig 10. Normalized latching current as a function of  
junction temperature  
003aaa204  
3
I
H
I
H(25°C)  
2
1
0
50  
0
50  
100  
150  
T (°C)  
j
Fig 11. Normalized holding current as a function of junction temperature  
OT406_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2008  
8 of 13  
OT406  
NXP Semiconductors  
Four-quadrant triac, enhanced noise immunity  
8. Package outline  
Plastic surface-mounted package with increased heatsink; 4 leads  
SOT223  
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X  
1
e
0
2
4 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
UNIT  
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8  
1.5  
0.10 0.80  
0.01 0.60  
3.1  
2.9  
0.32  
0.22  
6.7  
6.3  
3.7  
3.3  
7.3  
6.7  
1.1  
0.7  
0.95  
0.85  
mm  
4.6  
2.3  
0.2  
0.1  
0.1  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
04-11-10  
06-03-16  
SOT223  
SC-73  
Fig 12. Package outline SOT223 (SC-73)  
OT406_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2008  
9 of 13  
OT406  
NXP Semiconductors  
Four-quadrant triac, enhanced noise immunity  
9. Mounting  
9.1 Mounting instructions  
3.8 min  
1.5  
min  
6.3  
1.5  
min  
(3×)  
2.3  
1.5  
min  
4.6  
001aab508  
All dimensions are in mm  
Fig 13. Minimum footprint SOT223  
9.2 Printed-circuit board  
36  
18  
4.5  
4.6  
60  
9
10  
7
15  
50  
001aab509  
All dimensions are in mm  
Printed-circuit board: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick)  
Fig 14. Printed-circuit board pad area SOT223  
OT406_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2008  
10 of 13  
OT406  
NXP Semiconductors  
Four-quadrant triac, enhanced noise immunity  
10. Revision history  
Table 7.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
OT406_1  
20080519  
Product data sheet  
-
-
OT406_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2008  
11 of 13  
OT406  
NXP Semiconductors  
Four-quadrant triac, enhanced noise immunity  
11. Legal information  
11.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
11.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
11.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
11.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
12. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
OT406_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2008  
12 of 13  
OT406  
NXP Semiconductors  
Four-quadrant triac, enhanced noise immunity  
13. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5  
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6  
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
9
9.1  
9.2  
Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Mounting instructions . . . . . . . . . . . . . . . . . . . 10  
Printed-circuit board . . . . . . . . . . . . . . . . . . . . 10  
10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11  
11  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
11.1  
11.2  
11.3  
11.4  
12  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . 12  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2008.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 19 May 2008  
Document identifier: OT406_1  

OT406 相关器件

型号 制造商 描述 价格 文档
OT40F3 ETC Switch-disconnectors 获取价格
OT410D ETC NPN Silicon Phototransistor 获取价格
OT410D1 ETC Optoelectronic 获取价格
OT410D2 ETC Optoelectronic 获取价格
OT410D3 ETC Optoelectronic 获取价格
OT410T ETC NPN Silicon Phototransistor 获取价格
OT410T1 ETC Optoelectronic 获取价格
OT410T2 ETC Optoelectronic 获取价格
OT410T3 ETC Optoelectronic 获取价格
OT411 ETC Optoelectronic 获取价格

OT406 相关文章

  • Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
    2024-09-20
    5
  • Bourns 精密环境传感器产品选型手册(英文版)
    2024-09-20
    8
  • Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
    2024-09-20
    8
  • Bourns GMOV 混合过压保护组件产品选型手册(英文版)
    2024-09-20
    6