PBHV8540ZT/R [NXP]

TRANSISTOR,BJT,NPN,400V V(BR)CEO,500MA I(C),SOT-223;


型号：	PBHV8540ZT/R
厂家：	NXP
描述：	TRANSISTOR,BJT,NPN,400V V(BR)CEO,500MA I(C),SOT-223 晶体小信号双极晶体管开关光电二极管
文件：	总12页 (文件大小：109K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PBHV8540T

500 V, 0.5 A NPN high-voltage low V_CEsat(BISS) transistor

Rev. 02 — 14 January 2009

Product data sheet

1. Product proﬁle

1.1 General description

NPN high-voltage low V_CEsatBreakthrough In Small Signal (BISS) transistor in a

SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV9040T.

1.2 Features

I High voltage

I Low collector-emitter saturation voltage V_CEsat

I High collector current capability I_Cand I_CM

I High collector current gain (h_FE) at high I_C

I AEC-Q101 qualiﬁed

1.3 Applications

I Electronic ballast for ﬂuorescent lighting

I LED driver for LED chain module

I LCD backlighting

I High Intensity Discharge (HID) front lighting

I Automotive motor management

I Hook switch for wired telecom

I Switch mode power supply

1.4 Quick reference data

Table 1.

Symbol

V_CESM

Quick reference data

Parameter

Conditions

Min

Typ

Max Unit

collector-emitter peak

voltage

V_BE= 0 V

500

V_CEO

I_C

collector-emitter voltage

collector current

open base

400

0.5

h_FE

DC current gain

V_CE= 10 V;

I_C= 50 mA

100

200

PBHV8540T

NXP Semiconductors

500 V, 0.5 A NPN high-voltage low V_CEsat(BISS) transistor

2. Pinning information

Table 2.

Pinning

Description

base

Simpliﬁed outline

Graphic symbol

emitter

collector

sym021

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PBHV8540T

plastic surface-mounted package; 3 leads

SOT23

4. Marking

Table 4.

Marking codes

Type number

Marking code^[1]

PBHV8540T

W4*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

PBHV8540T_2

Product data sheet

Rev. 02 — 14 January 2009

2 of 12

PBHV8540T

NXP Semiconductors

500 V, 0.5 A NPN high-voltage low V_CEsat(BISS) transistor

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

Parameter

Conditions

open emitter

open base

V_BE= 0 V

Min

Max

500

400

500

Unit

collector-base voltage

collector-emitter voltage

V_CEO

V_CESM

collector-emitter peak

voltage

V_EBO

I_C

emitter-base voltage

collector current

open collector

0.5

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

I_BM

peak base current

single pulse;

200

t_p≤ 1 ms

[1]

P_tot

T_j

total power dissipation

junction temperature

ambient temperature

storage temperature

_amb≤ 25 °C

300

°C

150

T_amb

T_stg

−55

−65

+150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

006aab150

400

tot

(mW)

300

200

100

−75

−25

125

175

(°C)

amb

FR4 PCB, standard footprint

Fig 1. Power derating curve

PBHV8540T_2

Product data sheet

Rev. 02 — 14 January 2009

3 of 12

PBHV8540T

NXP Semiconductors

500 V, 0.5 A NPN high-voltage low V_CEsat(BISS) transistor

6. Thermal characteristics

Table 6.

Symbol

R_th(j-a)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max Unit

[1]

thermal resistance from

junction to ambient

in free air

417

K/W

R_th(j-sp)

thermal resistance from

junction to solder point

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

006aab151

duty cycle = 1

th(j-a)

0.75

0.5

0.33

(K/W)

0.2

0.1

0.05

0.02

0.01

−1

−5

−4

−3

−2

−1

(s)

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PBHV8540T_2

Product data sheet

Rev. 02 — 14 January 2009

4 of 12

PBHV8540T

NXP Semiconductors

500 V, 0.5 A NPN high-voltage low V_CEsat(BISS) transistor

7. Characteristics

Table 7.

Characteristics

T_amb= 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

I_CBO

collector-base cut-off

current

V_CB= 320 V; I_E= 0 A

100

V_CB= 320 V; I_E= 0 A;

µA

T_j= 150 °C

I_CES

I_EBO

h_FE

collector-emitter cut-off V_CE= 320 V; I_C= 0 A

current

100

emitter-base cut-off

current

V_EB= 4 V; I_C= 0 A

DC current gain

V_CE= 10 V

I_C= 50 mA

100

200

150

I_C= 100 mA

[1]

I_C= 300 mA

V_CEsat

collector-emitter

saturation voltage

I_C= 100 mA; I_B= 10 mA

I_C= 100 mA; I_B= 20 mA

I_C= 300 mA; I_B= 60 mA

100

200

250

135

V_BEsat

f_T

base-emitter saturation I_C= 300 mA; I_B= 60 mA

voltage

0.91 1.1

transition frequency

collector capacitance

emitter capacitance

V_CE= 10 V; I_C= 100 mA;

f = 100 MHz

MHz

C_c

V_CB= 20 V; I_E= i_e= 0 A;

f = 1 MHz

C_e

V_EB= 0.5 V; I_C= i_c= 0 A;

f = 1 MHz

165

t_d

t_r

delay time

rise time

V_CC= 6 V; I_C= 0.5 A;

I_Bon= 0.1 A; I_Boff= −0.1 A

6200

6250

800

t_on

t_s

turn-on time

storage time

fall time

t_f

2200

3000

t_off

turn-off time

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

PBHV8540T_2

Product data sheet

Rev. 02 — 14 January 2009

5 of 12

PBHV8540T

NXP Semiconductors

500 V, 0.5 A NPN high-voltage low V_CEsat(BISS) transistor

006aab175

006aab174

1.0

400

(A)

(mA) = 175

105

0.8

300

140

(1)

0.6

0.4

0.2

(2)

200

(3)

100

−1

(V)

(mA)

V_CE= 10 V

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 3. DC current gain as a function of collector

current; typical values

Fig 4. Collector current as a function of

collector-emitter voltage; typical values

006aab176

006aab177

1.6

1.3

(V)

BEsat

(V)

1.2

0.9

0.5

0.1

(1)

(2)

(3)

(1)

(2)

(3)

0.8

0.4

−1

(mA)

I (mA)

V_CE= 10 V

I_C/I_B= 5

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 5. Base-emitter voltage as a function of collector

current; typical values

Fig 6. Base-emitter saturation voltage as a function

of collector current; typical values

PBHV8540T_2

Product data sheet

Rev. 02 — 14 January 2009

6 of 12

PBHV8540T

NXP Semiconductors

500 V, 0.5 A NPN high-voltage low V_CEsat(BISS) transistor

006aab178

006aab179

CEsat

(V)

CEsat

(V)

(1)

(2)

(3)

−1

(1)

(2)

(3)

−2

−1

(mA)

I (mA)

I_C/I_B= 5

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 20

(2) I_C/I_B= 10

(3) I_C/I_B= 5

Fig 7. Collector-emitter saturation voltage as a

function of collector current; typical values

Fig 8. Collector-emitter saturation voltage as a

function of collector current; typical values

006aab180

006aab181

CEsat

(Ω)

(1) (2) (3)

(1)

(2)

(3)

−1

(mA)

I (mA)

I_C/I_B= 5

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 20

(2) I_C/I_B= 10

(3) I_C/I_B= 5

Fig 9. Collector-emitter saturation resistance as a

function of collector current; typical values

Fig 10. Collector-emitter saturation resistance as a

function of collector current; typical values

PBHV8540T_2

Product data sheet

Rev. 02 — 14 January 2009

7 of 12

PBHV8540T

NXP Semiconductors

500 V, 0.5 A NPN high-voltage low V_CEsat(BISS) transistor

8. Test information

(probe)

oscilloscope

450 Ω

DUT

mlb826

Fig 11. Test circuit for switching times

8.1 Quality information

This product has been qualiﬁed in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualiﬁcation for discrete semiconductors, and is

suitable for use in automotive applications.

9. Package outline

3.0

2.8

1.1

0.9

0.45

0.15

2.5 1.4

2.1 1.2

0.48

0.38

0.15

0.09

1.9

Dimensions in mm

04-11-04

Fig 12. Package outline SOT23 (TO-236AB)

10. Packing information

Table 8.

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.^[1]

Type number Package

Description

Packing quantity

3000

-215

10000

PBHV8540T

SOT23

4 mm pitch, 8 mm tape and reel

-235

[1] For further information and the availability of packing methods, see Section 14.

PBHV8540T_2

Product data sheet

Rev. 02 — 14 January 2009

8 of 12

PBHV8540T

NXP Semiconductors

500 V, 0.5 A NPN high-voltage low V_CEsat(BISS) transistor

11. Soldering

3.3

2.9

1.9

solder lands

solder resist

1.7

solder paste

occupied area

0.6

0.7

(3×)

Dimensions in mm

0.5

(3×)

0.6

(3×)

sot023_fr

Fig 13. Reﬂow soldering footprint SOT23 (TO-236AB)

2.2

1.2

(2×)

1.4

(2×)

solder lands

solder resist

occupied area

2.6

4.6

Dimensions in mm

1.4

preferred transport direction during soldering

2.8

4.5

sot023_fw

Fig 14. Wave soldering footprint SOT23 (TO-236AB)

PBHV8540T_2

Product data sheet

Rev. 02 — 14 January 2009

9 of 12

PBHV8540T

NXP Semiconductors

500 V, 0.5 A NPN high-voltage low V_CEsat(BISS) transistor

12. Revision history

Table 9.

Revision history

Document ID

PBHV8540T_2

Modiﬁcations:

Release date

Data sheet status

Change notice

Supersedes

20090114

Product data sheet

PBHV8540T_1

• Figure 4: amended

• Section 13 “Legal information”: updated

PBHV8540T_1

20080205

Product data sheet

PBHV8540T_2

Product data sheet

Rev. 02 — 14 January 2009

10 of 12

PBHV8540T

NXP Semiconductors

500 V, 0.5 A NPN high-voltage low V_CEsat(BISS) transistor

13. Legal information

13.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

13.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

PBHV8540T_2

Product data sheet

Rev. 02 — 14 January 2009

11 of 12

PBHV8540T

NXP Semiconductors

500 V, 0.5 A NPN high-voltage low V_CEsat(BISS) transistor

15. Contents

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

Quality information . . . . . . . . . . . . . . . . . . . . . . 8

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

Packing information. . . . . . . . . . . . . . . . . . . . . . 8

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

8.1

Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.1

13.2

13.3

13.4

Contact information. . . . . . . . . . . . . . . . . . . . . 11

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 14 January 2009

Document identifier: PBHV8540T_2

PBHV8540ZT/R [NXP]

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