PBLS2001D [NXP]

20 V PNP BISS loadswitch; 20 V PNP BISS loadswitch
PBLS2001D
型号: PBLS2001D
厂家: NXP    NXP
描述:

20 V PNP BISS loadswitch
20 V PNP BISS loadswitch

晶体 小信号双极晶体管 开关 光电二极管
文件: 总16页 (文件大小:155K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PBLS2001D  
20 V PNP BISS loadswitch  
Rev. 01 — 5 July 2005  
Product data sheet  
1. Product profile  
1.1 General description  
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-  
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)  
plastic package.  
1.2 Features  
Low VCEsat (BISS) and resistor-equipped transistor in one package  
Low threshold voltage (< 1 V) compared to MOSFET  
Low drive power required  
Space-saving solution  
Reduction of component count  
1.3 Applications  
Supply line switches  
Battery charger switches  
High-side switches for LEDs, drivers and backlights  
Portable equipment  
1.4 Quick reference data  
Table 1:  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
TR1; PNP low VCEsat transistor  
VCEO  
IC  
collector-emitter voltage  
collector current (DC)  
open base  
-
-
-
-
20  
1  
V
-
A
[1]  
RCEsat  
collector-emitter saturation IC = 1 A;  
resistance IB = 100 mA  
185  
280  
mΩ  
TR2; NPN resistor-equipped transistor  
VCEO  
IO  
collector-emitter voltage  
output current  
open base  
-
-
50  
V
-
-
100  
2.86  
1.2  
mA  
kΩ  
R1  
bias resistor 1 (input)  
bias resistor ratio  
1.54  
0.8  
2.2  
1
R2/R1  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
2. Pinning information  
Table 2:  
Pinning  
Pin  
1
Description  
Simplified outline  
Symbol  
emitter TR1  
6
5
4
6
5
4
2
base TR1  
3
output (collector) TR2  
GND (emitter) TR2  
input (base) TR2  
collector TR1  
R1  
R2  
4
1
2
3
TR2  
5
TR1  
1
6
2
3
sym036  
3. Ordering information  
Table 3:  
Ordering information  
Type number Package  
Name  
Description  
Version  
PBLS2001D  
SC-74  
plastic surface mounted package; 6 leads  
SOT457  
4. Marking  
Table 4:  
Marking codes  
Type number  
Marking code  
PBLS2001D  
F6  
5. Limiting values  
Table 5:  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min  
Max  
Unit  
TR1; PNP low VCEsat transistor  
VCBO  
VCEO  
VEBO  
IC  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
peak collector current  
base current (DC)  
open emitter  
open base  
-
-
-
-
-
-
-
-
-
-
20  
20  
5  
V
V
open collector  
V
1  
A
ICM  
tp 300 µs  
tp 300 µs  
2  
A
IB  
0.3  
0.6  
250  
350  
400  
A
IBM  
peak base current  
A
[1]  
[2]  
[3]  
Ptot  
total power dissipation  
T
amb 25 °C  
mW  
mW  
mW  
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
2 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
Table 5:  
Limiting values …continued  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter Conditions  
TR2; NPN resistor-equipped transistor  
Min  
Max  
Unit  
VCBO  
VCEO  
VEBO  
VI  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
input voltage  
open emitter  
open base  
-
-
-
50  
50  
10  
V
V
V
open collector  
positive  
-
-
-
-
-
+12  
10  
100  
100  
200  
V
negative  
V
IO  
output current  
mA  
mA  
mW  
ICM  
peak collector current  
total power dissipation  
tp 300 µs  
[1]  
Ptot  
Tamb 25 °C  
Per device  
Ptot  
[1]  
[2]  
[3]  
total power dissipation  
-
400  
mW  
mW  
mW  
°C  
-
530  
-
600  
Tstg  
Tj  
storage temperature  
junction temperature  
ambient temperature  
65  
-
+150  
150  
°C  
Tamb  
65  
+150  
°C  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.  
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.  
006aaa414  
0.8  
P
tot  
(W)  
(1)  
(2)  
0.6  
(3)  
0.4  
0.2  
0
0
40  
80  
120  
160  
(°C)  
T
amb  
(1) Ceramic PCB, Al2O3, standard footprint  
(2) FR4 PCB, mounting pad for collector 1 cm2  
(3) FR4 PCB, standard footprint  
Fig 1. Power derating curves  
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
3 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
6. Thermal characteristics  
Table 6:  
Symbol  
Per device  
Rth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ Max Unit  
[1]  
[2]  
[3]  
thermal resistance from  
junction to ambient  
in free air  
-
-
-
-
-
-
315  
236  
210  
K/W  
K/W  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.  
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.  
006aaa415  
3
10  
duty cycle =  
1
Z
th(j-a)  
0.75  
(K/W)  
0.5  
0.33  
2
10  
0.2  
0.1  
0.05  
10  
0.02  
0.01  
0
1
1  
10  
5  
4  
3  
2  
1  
2
3
10  
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical  
values  
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
4 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
006aaa463  
3
10  
Z
th(j-a)  
δ = 1  
0.75  
(K/W)  
0.5  
0.33  
0.2  
2
10  
0.1  
0.05  
10  
0.02  
0.01  
0
1
10  
5  
4  
3  
2  
1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, mounting pad for collector 1 cm2  
Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical  
values  
006aaa464  
3
10  
Z
th(j-a)  
δ = 1  
0.75  
(K/W)  
0.5  
0.33  
0.2  
2
10  
0.1  
0.05  
10  
0.02  
0.01  
0
1
10  
5  
4  
3  
2  
1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
Ceramic PCB, Al2O3, standard footprint  
Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical  
values  
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
5 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
7. Characteristics  
Table 7:  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min Typ  
Max  
Unit  
TR1; PNP low VCEsat transistor  
ICBO  
collector-base cut-off VCB = 20 V; IE = 0 A  
-
-
-
-
0.1  
50  
µA  
µA  
current  
VCB = 20 V; IE = 0 A;  
Tj = 150 °C  
ICES  
IEBO  
hFE  
collector-emitter  
cut-off current  
VCE = 20 V; VBE = 0 V  
-
-
-
-
0.1  
0.1  
µA  
µA  
emitter-base cut-off  
current  
VEB = 5 V; IC = 0 A  
DC current gain  
VCE = 2 V; IC = 1 mA  
VCE = 2 V; IC = 100 mA  
VCE = 2 V; IC = 500 mA  
VCE = 2 V; IC = 1 A  
220 495  
220 440  
220 310  
155 220  
-
-
[1]  
[1]  
[1]  
-
-
VCE = 2 V; IC = 2 A  
60  
-
120  
-
VCEsat  
collector-emitter  
saturation voltage  
IC = 100 mA; IB = 1 mA  
IC = 500 mA; IB = 50 mA  
IC = 1 A; IB = 50 mA  
IC = 1 A; IB = 100 mA  
IC = 1 A; IB = 100 mA  
55  
90  
mV  
[1]  
[1]  
[1]  
[1]  
-
100  
200  
185  
185  
150 mV  
300 mV  
280 mV  
-
-
RCEsat  
VBEsat  
collector-emitter  
saturation resistance  
-
280  
mΩ  
[1]  
[1]  
[1]  
base-emitter  
saturation voltage  
IC = 1 A; IB = 50 mA  
IC = 1 A; IB = 100 mA  
VCE = 5 V; IC = 1 A  
-
-
-
0.95 1.1  
1 1.1  
0.85 1.1  
V
V
V
VBEon  
base-emitter  
turn-on voltage  
td  
tr  
delay time  
IC = 1 A; IBon = 50 mA;  
-
-
-
-
-
-
8
-
-
-
-
-
-
-
ns  
IBoff = 50 mA  
rise time  
34  
42  
140  
45  
185  
ns  
ton  
ts  
turn-on time  
storage time  
fall time  
ns  
ns  
tf  
ns  
toff  
fT  
turn-off time  
transition frequency  
ns  
IC = 50 mA; VCE = 10 V;  
150 185  
MHz  
f = 100 MHz  
Cc  
collector capacitance VCB = 10 V; IE = ie = 0 A;  
-
15  
20  
pF  
f = 1 MHz  
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
6 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
Table 7:  
Characteristics …continued  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min Typ  
Max  
Unit  
TR2; NPN resistor-equipped transistor  
ICBO  
collector-base cut-off VCB = 50 V; IE = 0 A  
-
-
100  
nA  
current  
ICEO  
collector-emitter  
cut-off current  
VCE = 30 V; IB = 0 A  
-
-
-
-
1
µA  
µA  
VCE = 30 V; IB = 0 A;  
50  
Tj = 150 °C  
IEBO  
emitter-base cut-off  
current  
VEB = 5 V; IC = 0 A  
-
-
2
mA  
mV  
hFE  
DC current gain  
VCE = 5 V; IC = 20 mA  
IC = 10 mA; IB = 0.5 mA  
30  
-
-
-
-
VCEsat  
collector-emitter  
150  
saturation voltage  
VI(off)  
VI(on)  
R1  
off-state input voltage VCE = 5 V; IC = 1 mA  
on-state input voltage VCE = 0.3 V; IC = 20 mA  
bias resistor 1 (input)  
-
1.2  
1.6  
0.5  
-
V
2
V
1.54 2.2  
2.86  
1.2  
2.5  
kΩ  
R2/R1  
Cc  
bias resistor ratio  
0.8  
-
1
-
collector capacitance VCB = 10 V; IE = ie = 0 A;  
f = 1 MHz  
pF  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
7 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
006aaa416  
006aaa417  
1000  
1  
h
FE  
V
CEsat  
(V)  
800  
(1)  
(2)  
1  
10  
10  
10  
600  
400  
200  
0
(1)  
(2)  
(3)  
2  
(3)  
3  
1  
2
3
4
1  
2
3
I
4
10  
1  
10  
10  
10  
10  
(mA)  
10  
1  
10  
10  
10  
10  
(mA)  
C
I
C
VCE = 2 V  
IC/IB = 20  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 55 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 55 °C  
Fig 5. TR1 (PNP): DC current gain as a function of  
collector current; typical values  
Fig 6. TR1 (PNP): Collector-emitter saturation voltage  
as a function of collector current; typical values  
006aaa418  
006aaa419  
1.0  
1.2  
V
BEsat  
(V)  
V
BE  
(V)  
1.0  
0.8  
0.6  
0.4  
0.2  
(1)  
(2)  
(3)  
0.8  
(1)  
(2)  
(3)  
0.6  
0.4  
0.2  
1  
2
3
4
1  
2
3
I
4
10  
1  
10  
10  
10  
10  
(mA)  
10  
1  
10  
10  
10  
10  
(mA)  
C
I
C
VCE = 5 V  
IC/IB = 20  
(1) Tamb = 55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
(1) Tamb = 55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig 7. TR1 (PNP): Base-emitter voltage as a function  
of collector current; typical values  
Fig 8. TR1 (PNP): Base-emitter saturation voltage as a  
function of collector current; typical values  
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
8 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
006aaa420  
006aaa421  
2
2.0  
10  
11.7 mA  
10.4 mA  
I
= 13 mA  
B
I
C
(A)  
R
CEsat  
9.1 mA  
7.8 mA  
6.5 mA  
()  
1.6  
10  
5.2 mA  
3.9 mA  
1.2  
0.8  
0.4  
0  
2.6 mA  
1.3 mA  
1
(1)  
(2)  
(3)  
1  
10  
1  
2
3
I
4
0  
2  
4  
6  
10  
1  
10  
10  
10  
10  
(mA)  
V
(V)  
CE  
C
Tamb = 25 °C  
IC/IB = 20  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 55 °C  
Fig 9. TR1 (PNP): Collector current as a function of  
collector-emitter voltage; typical values  
Fig 10. TR1 (PNP): Collector-emitter saturation  
resistance as a function of collector current;  
typical values  
006aaa422  
006aaa423  
3
1  
10  
R
CEsat  
V
CEsat  
(V)  
()  
2
10  
1  
10  
10  
10  
(1)  
(2)  
10  
2  
1
(3)  
(1)  
(2)  
(3)  
3  
1  
10  
1  
2
3
I
4
1  
2
3
I
4
10  
1  
10  
10  
10  
10  
(mA)  
10  
1  
10  
10  
10  
10  
(mA)  
C
C
Tamb = 25 °C  
Tamb = 25 °C  
(1) IC/IB = 100  
(2) IC/IB = 50  
(3) IC/IB = 10  
(1) IC/IB = 100  
(2) IC/IB = 50  
(3) IC/IB = 10  
Fig 11. TR1 (PNP): Collector-emitter saturation voltage  
as a function of collector current; typical values  
Fig 12. TR1 (PNP): Collector-emitter saturation  
resistance as a function of collector current;  
typical values  
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
9 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
006aaa015  
006aaa014  
3
3
10  
10  
h
FE  
(1)  
V
CEsat  
(2)  
(3)  
(mV)  
2
10  
2
10  
(1)  
(2)  
(3)  
10  
1
10  
10  
1  
2
2
1
10  
10  
1
10  
10  
I
(mA)  
I (mA)  
C
C
VCE = 5 V  
IC/IB = 20  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = 40 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 40 °C  
Fig 13. TR2 (NPN): DC current gain as a function of  
collector current; typical values  
Fig 14. TR2 (NPN): Collector-emitter saturation voltage  
as a function of collector current; typical values  
006aaa016  
006aaa017  
2
10  
10  
V
I(on)  
(V)  
V
I(off)  
(V)  
10  
(1)  
(2)  
1
(3)  
(1)  
(2)  
(3)  
1
1  
1  
10  
10  
1  
2
2  
1  
10  
1
10  
10  
10  
10  
1
10  
I
(mA)  
I (mA)  
C
C
VCE = 0.3 V  
VCE = 5 V  
(1) Tamb = 40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
(1) Tamb = 40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig 15. TR2 (NPN): On-state input voltage as a function  
of collector current; typical values  
Fig 16. TR2 (NPN): Off-state input voltage as a function  
of collector current; typical values  
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
10 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
8. Test information  
I
B
input pulse  
90 %  
(idealized waveform)  
I
(100 %)  
Bon  
10 %  
I
Boff  
output pulse  
(idealized waveform)  
I
C
90 %  
I
(100 %)  
C
10 %  
t
t
t
f
t
t
r
s
d
006aaa266  
t
t
off  
on  
Fig 17. BISS transistor switching time definition  
V
V
CC  
BB  
R
B
R
C
V
o
(probe)  
(probe)  
oscilloscope  
oscilloscope  
450  
450 Ω  
R2  
V
I
DUT  
R1  
mgd624  
IC = 1 A; IBon = 50 mA; IBoff = 50 mA; R1 = open; R2 = 45 ; RB = 145 ; RC = 10 Ω  
Fig 18. Test circuit for switching times  
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
11 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
9. Package outline  
3.1  
2.7  
1.1  
0.9  
6
5
4
0.6  
0.2  
3.0 1.7  
2.5 1.3  
pin 1 index  
1
2
3
0.26  
0.10  
0.40  
0.25  
0.95  
1.9  
Dimensions in mm  
04-11-08  
Fig 19. Package outline SOT457 (SC-74)  
10. Packing information  
Table 8:  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code. [1]  
Type number Package  
Description  
Packing quantity  
3000  
-115  
-125  
10000  
-135  
[2]  
[3]  
PBLS2001D  
SOT457  
4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
-165  
[1] For further information and the availability of packing methods, see Section 17.  
[2] T1: normal taping  
[3] T2: reverse taping  
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
12 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
11. Soldering  
3.45  
1.95  
solder lands  
solder resist  
occupied area  
solder paste  
0.95  
0.45 0.55  
2.825  
3.30  
1.60  
1.70  
3.10  
3.20  
msc422  
Dimensions in mm  
Fig 20. Reflow soldering footprint  
5.30  
solder lands  
solder resist  
occupied area  
solder paste  
5.05  
0.45 1.45 4.45  
MSC423  
1.40  
4.30  
Dimensions in mm  
Fig 21. Wave soldering footprint  
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
13 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
12. Revision history  
Table 9:  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice Doc. number  
Supersedes  
PBLS2001D_1  
20050705  
Product data sheet  
-
-
-
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
14 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
13. Data sheet status  
Level Data sheet status[1] Product status[2] [3]  
Definition  
I
Objective data  
Development  
This data sheet contains data from the objective specification for product development. Philips  
Semiconductors reserves the right to change the specification in any manner without notice.  
II  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification. Supplementary data will be published  
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in  
order to improve the design and supply the best possible product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips Semiconductors reserves the  
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant  
changes will be communicated via a Customer Product/Process Change Notification (CPCN).  
[1]  
[2]  
Please consult the most recently issued data sheet before initiating or completing a design.  
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at  
URL http://www.semiconductors.philips.com.  
[3]  
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
customers using or selling these products for use in such applications do so  
at their own risk and agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
14. Definitions  
Short-form specification The data in a short-form specification is  
extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Right to make changes — Philips Semiconductors reserves the right to  
make changes in the products - including circuits, standard cells, and/or  
software - described or contained herein in order to improve design and/or  
performance. When the product is in full production (status ‘Production’),  
relevant changes will be communicated via a Customer Product/Process  
Change Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no  
license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are  
free from patent, copyright, or mask work right infringement, unless otherwise  
specified.  
Limiting values definition Limiting values given are in accordance with  
the Absolute Maximum Rating System (IEC 60134). Stress above one or  
more of the limiting values may cause permanent damage to the device.  
These are stress ratings only and operation of the device at these or at any  
other conditions above those given in the Characteristics sections of the  
specification is not implied. Exposure to limiting values for extended periods  
may affect device reliability.  
Application information Applications that are described herein for any  
of these products are for illustrative purposes only. Philips Semiconductors  
make no representation or warranty that such applications will be suitable for  
the specified use without further testing or modification.  
16. Trademarks  
Notice — All referenced brands, product names, service names and  
15. Disclaimers  
trademarks are the property of their respective owners.  
Life support — These products are not designed for use in life support  
appliances, devices, or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors  
17. Contact information  
For additional information, please visit: http://www.semiconductors.philips.com  
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com  
PBLS2001D_1  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 01 — 5 July 2005  
15 of 16  
PBLS2001D  
Philips Semiconductors  
20 V PNP BISS loadswitch  
18. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Test information. . . . . . . . . . . . . . . . . . . . . . . . 11  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12  
Packing information. . . . . . . . . . . . . . . . . . . . . 12  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15  
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Contact information . . . . . . . . . . . . . . . . . . . . 15  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
© Koninklijke Philips Electronics N.V. 2005  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior  
written consent of the copyright owner. The information presented in this document does  
not form part of any quotation or contract, is believed to be accurate and reliable and may  
be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under  
patent- or other industrial or intellectual property rights.  
Date of release: 5 July 2005  
Document number: PBLS2001D_1  
Published in The Netherlands  

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