PBLS6002D [NXP]
60 V PNP BISS loadswitch; 60 V PNP BISS loadswitch
| 型号： | PBLS6002D |
| 厂家： | 
NXP |
| 描述： | 60 V PNP BISS loadswitch |
| 文件： | 总16页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBLS6002D
60 V PNP BISS loadswitch
Rev. 01 — 23 June 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and
NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted
Device (SMD) plastic package.
1.2 Features
■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
■ Low threshold voltage (< 1 V) compared to MOSFET
■ Low drive power required
■ Space-saving solution
■ Reduction of component count
1.3 Applications
■ Supply line switches
■ Battery charger switches
■ High-side switches for LEDs, drivers and backlights
■ Portable equipment
1.4 Quick reference data
Table 1:
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
TR1; PNP low VCEsat transistor
VCEO
IC
collector-emitter voltage
collector current (DC)
open base
-
-
-
-
−60
−1
V
[1]
[2]
-
A
RCEsat
collector-emitter saturation IC = −1 A;
resistance IB = −100 mA
255
340
mΩ
TR2; NPN resistor-equipped transistor
VCEO
IO
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
open base
-
-
50
V
-
-
100
6.1
1.2
mA
kΩ
R1
3.3
0.8
4.7
1
R2/R1
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
2. Pinning information
Table 2:
Pinning
Pin
1
Description
Simplified outline
Symbol
emitter TR1
6
5
4
6
5
4
2
base TR1
3
output (collector) TR2
GND (emitter) TR2
input (base) TR2
collector TR1
R1
R2
4
1
2
3
TR2
5
TR1
1
6
2
3
sym036
3. Ordering information
Table 3:
Ordering information
Type number Package
Name
Description
Version
PBLS6002D
SC-74
plastic surface mounted package; 6 leads
SOT457
4. Marking
Table 4:
Marking codes
Type number
Marking code
PBLS6002D
F2
9397 750 15197
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 23 June 2005
2 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
TR1; PNP low VCEsat transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
open emitter
open base
-
-
-
-
-
-
-
−80
−60
−5
V
V
open collector
V
[1]
[2]
[3]
−700
−850
−1
mA
mA
A
ICM
peak collector current
single pulse;
−2
A
tp ≤ 1 ms
IB
base current (DC)
peak base current
-
-
−300
−1
mA
A
IBM
single pulse;
tp ≤ 1 ms
[1]
[2]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
-
-
250
350
400
mW
mW
mW
TR2; NPN resistor-equipped transistor
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
open emitter
open base
-
-
-
50
50
10
V
V
V
open collector
positive
-
-
-
-
-
-
-
+30
−10
100
100
200
200
200
V
negative
V
IO
output current (DC)
peak collector current
total power dissipation
mA
mA
mW
mW
mW
ICM
Ptot
[1]
[2]
[3]
Tamb ≤ 25 °C
Per device
[1]
[2]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
400
mW
mW
mW
°C
-
530
-
600
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
-
+150
150
°C
Tamb
−65
+150
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
9397 750 15197
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 23 June 2005
3 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
006aaa461
0.8
P
tot
(W)
(1)
(2)
0.6
(3)
0.4
0.2
0
0
40
80
120
160
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6:
Thermal characteristics
Parameter
Symbol
Per device
Rth(j-a)
Conditions
Min
Typ
Max
Unit
[1]
[2]
[3]
thermal resistance from in free air
junction to ambient
-
-
-
-
-
-
312
236
208
K/W
K/W
K/W
TR1; PNP low VCEsat transistor
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
105
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
9397 750 15197
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 23 June 2005
4 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
006aaa462
3
10
δ = 1
Z
th(j-a)
0.75
0.5
0.33
0.2
(K/W)
2
10
0.1
0.05
0.02
0.01
10
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;
typical values
006aaa463
3
10
Z
th(j-a)
δ = 1
0.75
(K/W)
0.5
0.33
0.2
2
10
0.1
0.05
10
0.02
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;
typical values
9397 750 15197
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 23 June 2005
5 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
006aaa464
3
10
Z
th(j-a)
δ = 1
0.75
(K/W)
0.5
0.33
0.2
2
10
0.1
0.05
10
0.02
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;
typical values
7. Characteristics
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
TR1; PNP low VCEsat transistor
ICBO
collector-base cut-off
current
VCB = −60 V; IE = 0 A
-
-
-
-
−100 nA
VCB = −60 V; IE = 0 A;
Tj = 150 °C
−50
µA
ICES
collector-emitter cut-off
current
VCE = −60 V; VBE = 0 V
-
-
−100 nA
IEBO
hFE
emitter-base cut-off current VEB = −5 V; IC = 0 A
-
-
−100 nA
DC current gain
VCE = −5 V; IC = −1 mA
200
150
350
230
-
-
[1]
[1]
VCE = −5 V;
IC = −500 mA
VCE = −5 V;
100
160
-
IC = −1000 mA
VCEsat
collector-emitter saturation IC = −100 mA;
-
-
-
-
-
−110 −175 mV
−135 −180 mV
−255 −340 mV
voltage
IB = −1 mA
[1]
[1]
[1]
[1]
IC = −500 mA;
IB = −50 mA
IC = −1000 mA;
IB = −100 mA
RCEsat
VBEsat
collector-emitter saturation IC = −1 A;
255
340
mΩ
resistance
IB = −100 mA
base-emitter saturation
voltage
IC = −1 A; IB = −50 mA
−0.95 −1.1
V
9397 750 15197
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 23 June 2005
6 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
Table 7:
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
[1]
VBEon
base-emitter turn-on
voltage
VCE = −5 V; IC = −1 A
-
−0.82 −0.9
V
td
tr
delay time
IC = −0.5 A;
-
11
-
-
-
-
-
-
-
ns
IBon = −25 mA;
rise time
-
30
ns
IBoff = 25 mA
ton
ts
turn-on time
storage time
fall time
-
41
ns
-
205
55
ns
tf
-
ns
toff
fT
turn-off time
transition frequency
-
260
185
ns
IC = −50 mA;
CE =−10 V;
150
MHz
V
f = 100 MHz
Cc
collector capacitance
VCB = −10 V;
IE = ie = 0 A; f = 1 MHz
-
-
9
-
15
pF
nA
TR2; NPN resistor-equipped transistor
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A
100
ICEO
collector-emitter cut-off
current
VCE = 30 V; IB = 0 A
-
-
-
-
1
µA
µA
VCE = 30 V; IB = 0 A;
50
Tj = 150 °C
IEBO
hFE
emitter-base cut-off current VEB = 5 V; IC = 0 A
DC current gain VCE = 5 V; IC = 20 mA
collector-emitter saturation IC = 10 mA;
-
-
-
-
900
-
µA
30
-
VCEsat
150
mV
voltage
IB = 0.5 mA
VI(off)
VI(on)
off-state input voltage
on-state input voltage
VCE = 5 V; IC = 100 µA
-
1.1
1.9
0.5
-
V
V
VCE = 0.3 V;
IC = 20 mA
2.5
R1
bias resistor 1 (input)
bias resistor ratio
3.3
0.8
-
4.7
1
6.1
1.2
2.5
kΩ
R2/R1
Cc
collector capacitance
VCB = 10 V;
-
pF
IE = ie = 0 A; f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
9397 750 15197
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 23 June 2005
7 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
006aaa474
006aaa475
600
−1
(1)
h
FE
V
CEsat
(mV)
400
(2)
(3)
−1
−10
(1)
(2)
(3)
200
−2
0
−10
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
VCE = −5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. TR1 (PNP): DC current gain as a function of
collector current; typical values
Fig 6. TR1 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa476
006aaa477
−1.0
−1.1
V
BEsat
(V)
V
(V)
BE
−0.9
−0.7
−0.5
−0.3
−0.1
−0.8
(1)
(2)
(1)
(2)
(3)
−0.6
−0.4
−0.2
(3)
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
VCE = −5 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 8. TR1 (PNP): Base-emitter saturation voltage as a
function of collector current; typical values
9397 750 15197
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Product data sheet
Rev. 01 — 23 June 2005
8 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
006aaa478
006aaa479
3
−2.0
10
I
(mA) = −35.0
−31.5
B
I
C
R
CEsat
(A)
−28.0
(Ω)
−24.5
−21.0
−1.6
−17.5
−14.0
2
10
−10.5
−7.0
−1.2
−0.8
−0.4
0.0
10
(1)
(2)
(3)
−3.5
1
−1
10
−1
2
3
4
0
−1
−2
−3
−4
−5
(V)
−10
−1
−10
−10
−10
−10
I (mA)
C
V
CE
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9. TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig 10. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aaa480
006aaa481
3
−1
10
R
CEsat
(Ω)
V
CEsat
(V)
2
10
(1)
(2)
(3)
−1
−10
10
(1)
(2)
1
(3)
−2
−1
−10
10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
Tamb = 25 °C
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 11. TR1 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
Fig 12. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
9397 750 15197
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 23 June 2005
9 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
006aaa030
006aaa031
3
10
1
h
FE
(1)
(2)
(3)
V
CEsat
(V)
2
10
(1)
(2)
(3)
−1
10
10
−2
1
10
10
−1
2
2
1
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 13. TR2 (NPN): DC current gain as a function of
collector current; typical values
Fig 14. TR2 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa032
006aaa033
10
10
V
I(on)
V
I(off)
(V)
(V)
(1)
(1)
(2)
(2)
(3)
1
1
(3)
−1
−1
10
10
−1
2
−2
−1
10
1
10
10
10
10
1
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 15. TR2 (NPN): On-state input voltage as a function
of collector current; typical values
Fig 16. TR2 (NPN): Off-state input voltage as a function
of collector current; typical values
9397 750 15197
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 23 June 2005
10 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
8. Test information
−
I
B
input pulse
90 %
(idealized waveform)
−
I
(100 %)
Bon
10 %
−
I
Boff
output pulse
−
(idealized waveform)
I
C
90 %
−
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig 17. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mgd624
IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω
Fig 18. Test circuit for switching times
9397 750 15197
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 23 June 2005
11 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
9. Package outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0 1.7
2.5 1.3
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 19. Package outline SOT457 (SC-74)
10. Packing information
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
Package
Description
Packing quantity
3000
-115
-125
10000
-135
[2]
[3]
PBLS6002D
SOT457
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-165
[1] For further information and the availability of packing methods, see Section 17.
[2] T1: normal taping
[3] T2: reverse taping
9397 750 15197
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 23 June 2005
12 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
11. Soldering
1.95
solder lands
solder resis
occupied ar
solder past
0.95
0.45 0.55
2.825
3.30
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 20. Reflow soldering footprint
5.30
solder lands
solder resist
occupied area
solder paste
5.05
0.45 1.45 4.45
MSC423
1.40
4.30
Dimensions in mm
Fig 21. Wave soldering footprint
9397 750 15197
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 23 June 2005
13 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
12. Revision history
Table 9:
Revision history
Document ID
Release date Data sheet status
20050623 Product data sheet
Change notice Doc. number
9397 750 15197
Supersedes
PBLS6002D_1
-
-
9397 750 15197
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 23 June 2005
14 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
13. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
14. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
16. Trademarks
Notice — All referenced brands, product names, service names and
15. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
17. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 15197
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 23 June 2005
15 of 16
PBLS6002D
Philips Semiconductors
60 V PNP BISS loadswitch
18. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information . . . . . . . . . . . . . . . . . . . . 15
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 23 June 2005
Document number: 9397 750 15197
Published in The Netherlands
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