PBSM5240PF [NXP]

1.8A, 40V, PNP, Si, POWER TRANSISTOR, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, HUSON6, 6 PIN;


型号：	PBSM5240PF
厂家：	NXP
描述：	1.8A, 40V, PNP, Si, POWER TRANSISTOR, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, HUSON6, 6 PIN 开关光电二极管晶体管
文件：	总2页 (文件大小：599K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NXP PNP low V_CEsat

BISS/Trench MOSFET module

PBSM5240PF in SOT1118

Unique 2-in-1 solution in an ultra-small

leadless SOT1118 package

This`groundbreaking`solution`enables`slim`mobile`devices`and`delivers`best-in-class`thermal`

performance`to`support`higher`currents`and`longer`lifetimes.

Key features and beneﬁts

Compared`to`conventional`solutions,`which`require`two`

packages`for`the`BISS/MOSFET`solution,`the`PBSM5240PF`

offers`a`more`than`50%`reduction`in`footprint`and`a`more`

than`10%`lower`package`height.`Also,`because`the`SOT1118`

incorporates`a`heat`sink,`the`device`delivers`25%`better`

thermal`performance,`which`leads`to`higher`currents`and`

longer`lifetimes.

``Smaller`PCB`area`than`for`conventional`transistors

``Very`low`collector-emitter`saturation`voltage`V_CEsat

``High`collector`current`capability`I_C`and`I_CM

``High`collector`current`gain`(h_FE)`at`high`I_C

``High`energy`efﬁciency`due`to`less`heat`generation

``Low-voltage`MOSFET`driver`stage

Applications

Size comparison: discrete solution

``Loadswitches`

``Battery-driven`devices

``Power`management`

``Charging`circuits

Conventional

BISS / MOSFET solution

PBSM5240PF

``Power`switches`(motors,`fans,`etc.)

The`NXP`PBSM5240PF`combines`a`PNP`low`V_CEsat`Breakthrough`

in`Small`Signal`(BISS)`transistor`and`an`N-channel`Trench`

MOSFET.`The`device`is`housed`in`a`leadless,`medium-power`

SOT1118`Surface-Mounted`Device`(SMD)`plastic`package.

SC-74 (SOT457) SC-75 (SOT416)

SOT1118

2.0 x 2.0 mm

= 4 mm²

2.8 x 2.9 mm

1.6 x 0.8 mm

= 8.1 mm²

= 1.28 mm²

With`a`footprint`of`only`2`x`2`mm`and`a`height`of`just`0.65`mm,`

the`SOT1118`offers`great`opportunities`for`the`miniaturization`

of`high-performance`end`products.`

> 50% footprint reduction, lower package height with new NXP solution PBSM5240PF

PNP low V_CEsatBISS/Trench MOSFET module in SOT1118

PNP low V_CEsat(BISS) transistor

SOT1118

N-channel Trench MOSFET

package

h_FEmin

h_FEmax

R_CEsattyp (mΩ)

@ I_C= 500 mA,

I_B= 50 mA

R_DSontyp

(mΩ)

V_CEO

(V)

I_CRM

(A)

V_DS

(V)

V_GS

(V)

I_D

(A)

Type

@ I_C= 100 mA, V_C= 5 V

PBSM5240PF

300

800

240

0.7

0.66

370

Application example

SOT1118 minimized outline

2.1

1.9

0.65

max

1.1

0.9

0.04

max

0.77

0.57

(2´)

0.65

(4´)

2.1

1.9

0.54

0.44

(2´)

0.35

0.25

(6´)

0.3

0.2

Dimensions in mm

10-05-31

Size comparison: other suppliers

2 x 2 packages

Chipfet

package

from other

suppliers

2 mm

SOT1118

2 mm

3.05 mm

Low height enables

slim mobile devices

2 mm

1.9 mm

1 mm

0.75 mm

0.65 mm

R_thj-sp

Without

heatsink

With

heatsink

K/W

-25 %

Best-in-class thermal

performance leads to

higher currents and

longer lifetimes

25 % better thermal

performance

www.nxp.com

information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and

may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof

does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: June 2011

Document order number: 9397 750 17133

Printed in the Netherlands

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