PBSS2515E_技术文档

PBSS2515E

15 V, 0.5 A NPN low V_CEsat(BISS) transistor

Rev. 02 — 21 April 2009

Product data sheet

1. Product proﬁle

1.1 General description

NPN low V_CEsatBreakthrough In Small Signal (BISS) transistor in an ultra small

SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS3515E.

1.2 Features

I Low collector-emitter saturation voltage V_CEsat

I High collector current capability I_Cand I_CM

I High collector current gain (h_FE) at high I_C

I High efﬁciency due to less heat generation

I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

I DC-to-DC conversion

I MOSFET gate driving

I Motor control

I Charging circuits

I Low power switches (e.g. motors, fans)

I Portable applications

1.4 Quick reference data

Table 1.

Symbol Parameter

V_CEOcollector-emitter voltage

I_C

Quick reference data

Conditions

Min

Typ

Max

15

Unit

V

open base

-

collector current

0.5

1

A

I_CM

peak collector current

single pulse;

A

t_p≤ 1 ms

[1]

R_CEsat

collector-emitter

saturation resistance

I_C= 500 mA;

I_B= 50 mA

-

300

500

mΩ

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

PBSS2515E

NXP Semiconductors

15 V, 0.5 A NPN low V_CEsat(BISS) transistor

2. Pinning information

Table 2.

Pinning

1

Description

base

Simpliﬁed outline

Graphic symbol

3

2

emitter

3

collector

1

2

sym021

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PBSS2515E

SC-75

plastic surface-mounted package; 3 leads

SOT416

4. Marking

Table 4.

Marking codes

Type number

Marking code

PBSS2515E

1Q

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Conditions

open emitter

open base

Min

Max

15

6

Unit

V

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current

-

V

open collector

V

0.5

1

A

I_CM

peak collector current

single pulse;

A

t_p≤ 1 ms

I_BM

P_tot

peak base current

single pulse;

t_p≤ 1 ms

-

100

mA

[1]

[2]

total power dissipation

T

_amb≤ 25 °C

-

150

mW

°C

-

250

T_j

junction temperature

ambient temperature

storage temperature

-

150

T_amb

T_stg

−65

+150

°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

PBSS2515E_2

Product data sheet

Rev. 02 — 21 April 2009

2 of 12

PBSS2515E

NXP Semiconductors

15 V, 0.5 A NPN low V_CEsat(BISS) transistor

006aaa412

300

tot

P

(mW)

(1)

(2)

200

100

0

40

80

120

160

(°C)

T

amb

(1) FR4 PCB, mounting pad for collector 1 cm²

(2) FR4 PCB, standard footprint

Fig 1. Power derating curves

6. Thermal characteristics

Table 6.

Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max

833

500

170

Unit

K/W

[1]

[2]

R_th(j-a)

thermal resistance from

in free air

-

junction to ambient

R_th(j-sp)

thermal resistance from

junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

PBSS2515E_2

Product data sheet

Rev. 02 — 21 April 2009

3 of 12

PBSS2515E

NXP Semiconductors

15 V, 0.5 A NPN low V_CEsat(BISS) transistor

006aab472

3

10

duty cycle =

1

Z

0.75

th(j-a)

(K/W)

0.5

0.33

2

0.2

10

0.1

0.05

0.02

0.01

10

0

1

10

−5

−4

−3

−2

−1

2

3

10

1

10

t

(s)

p

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aaa413

3

10

duty cycle =

1

Z

th(j-a)

0.75

(K/W)

0.5

0.33

2

10

0.2

0.1

0.05

0.02

0.01

10

0

1

10

−5

−4

−3

−2

−1

2

3

10

1

10

t

(s)

p

FR4 PCB, mounting pad for collector 1 cm²

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PBSS2515E_2

Product data sheet

Rev. 02 — 21 April 2009

4 of 12

PBSS2515E

NXP Semiconductors

15 V, 0.5 A NPN low V_CEsat(BISS) transistor

7. Characteristics

Table 7.

Characteristics

T_amb= 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

I_CBO

collector-base cut-off

current

V_CB= 15 V; I_E= 0 A

-

100

50

nA

V_CB= 15 V; I_E= 0 A;

µA

T_j= 150 °C

I_EBO

h_FE

emitter-base cut-off

current

V_EB= 5 V; I_C= 0 A

-

100

nA

DC current gain

V_CE= 2 V; I_C= 10 mA

V_CE= 2 V; I_C= 100 mA

V_CE= 2 V; I_C= 500 mA

I_C= 10 mA; I_B= 0.5 mA

I_C= 200 mA; I_B= 10 mA

I_C= 500 mA; I_B= 50 mA

200

-

[1]

150

-

90

-

V_CEsat

collector-emitter

saturation voltage

-

25

150

250

500

mV

mΩ

-

[1]

-

R_CEsat

V_BEsat

V_BEon

collector-emitter

saturation resistance

-

300

[1]

base-emitter saturation I_C= 500 mA; I_B= 50 mA

voltage

-

1.1

0.9

V

base-emitter turn-on

voltage

V_CE= 2 V; I_C= 100 mA

t_d

t_r

delay time

V_CC= 11 V;

I_C= 250 mA;

-

10

-

ns

rise time

-

15

ns

I_Bon= 12.5 mA;

t_on

t_s

turn-on time

storage time

fall time

-

25

ns

I_Boff= −12.5 mA

-

215

34

ns

t_f

-

ns

t_off

f_T

turn-off time

transition frequency

-

249

420

ns

V_CE= 5 V; I_C= 100 mA;

f = 100 MHz

250

MHz

C_c

collector capacitance

V_CB= 10 V; I_E= i_e= 0 A;

f = 1 MHz

-

4.4

6

pF

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

PBSS2515E_2

Product data sheet

Rev. 02 — 21 April 2009

5 of 12

PBSS2515E

NXP Semiconductors

15 V, 0.5 A NPN low V_CEsat(BISS) transistor

006aaa364

006aaa370

800

1.2

I

= 5.0 mA

B

h

FE

4.5

4.0

3.5

I

C

(A)

(1)

(2)

600

3.0

2.5

0.8

2.0

1.5

400

200

0

(3)

0.4

1.0

0.5

0

−1

2

3

10

1

10

0

1

2

3

4

5

I

(mA)

V

(V)

CE

C

V_CE= 2 V

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 4. DC current gain as a function of collector

current; typical values

Fig 5. Collector current as a function of

collector-emitter voltage; typical values

006aaa365

006aaa368

1100

1.3

V

BE

(mV)

V

BEsat

(V)

900

(1)

(2)

0.9

0.5

0.1

(1)

(2)

700

500

300

100

(3)

−1

2

3

−1

2

3

10

1

10

1

10

I

(mA)

I (mA)

C

V_CE= 2 V

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 6. Base-emitter voltage as a function of collector

current; typical values

Fig 7. Base-emitter saturation voltage as a function

of collector current; typical values

PBSS2515E_2

Product data sheet

Rev. 02 — 21 April 2009

6 of 12

PBSS2515E

NXP Semiconductors

15 V, 0.5 A NPN low V_CEsat(BISS) transistor

006aaa366

006aaa367

1

V

CEsat

(V)

−1

−2

−3

−1

−2

−3

10

(1)

(2)

(1)

(2)

(3)

10

(3)

−1

2

3

−1

2

3

10

1

10

1

10

I

(mA)

I (mA)

C

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 8. Collector-emitter saturation voltage as a

function of collector current; typical values

Fig 9. Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa369

006aaa371

2

3

10

R

CEsat

(Ω)

R

CEsat

(Ω)

2

10

(1)

10

(2)

(3)

(1)

(2)

(3)

1

−1

10

−1

2

I

3

−1

2

3

10

1

10

1

10

(mA)

I (mA)

C

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 10. Collector-emitter saturation resistance as a

function of collector current; typical values

Fig 11. Collector-emitter saturation resistance as a

function of collector current; typical values

PBSS2515E_2

Product data sheet

Rev. 02 — 21 April 2009

7 of 12

PBSS2515E

NXP Semiconductors

15 V, 0.5 A NPN low V_CEsat(BISS) transistor

8. Test information

I

B

input pulse

90 %

(idealized waveform)

I

(100 %)

Bon

10 %

I

Boff

output pulse

(idealized waveform)

I

C

90 %

I

(100 %)

C

10 %

t

f

t

r

s

d

t

off

on

006aaa003

Fig 12. BISS transistor switching time deﬁnition

V

CC

BB

R

B

R

C

V

o

(probe)

oscilloscope

450 Ω

R2

V

I

DUT

R1

mlb826

V_CC= 11 V; I_C= 250 mA; I_Bon= 12.5 mA; I_Boff= −12.5 mA

Fig 13. Test circuit for switching times

PBSS2515E_2

Product data sheet

Rev. 02 — 21 April 2009

8 of 12

PBSS2515E

NXP Semiconductors

15 V, 0.5 A NPN low V_CEsat(BISS) transistor

9. Package outline

1.8

1.4

0.95

0.60

3

0.45

0.15

1.75 0.9

1.45 0.7

1

2

0.30

0.15

0.25

0.10

1

Dimensions in mm

04-11-04

Fig 14. Package outline SOT416 (SC-75)

10. Packing information

Table 8.

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.^[1]

Type number Package

Description

Packing quantity

3000

10000

PBSS2515E

SOT416

4 mm pitch, 8 mm tape and reel

-115

-135

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

2.2

1.7

solder lands

solder resist

1

0.85

2

solder paste

0.5

(3×)

occupied area

Dimensions in mm

0.6

(3×)

1.3

sot416_fr

Fig 15. Reﬂow soldering footprint SOT416 (SC-75)

Rev. 02 — 21 April 2009

PBSS2515E_2

Product data sheet

9 of 12

PBSS2515E

NXP Semiconductors

15 V, 0.5 A NPN low V_CEsat(BISS) transistor

12. Revision history

Table 9.

Revision history

Document ID

PBSS2515E_2

Modiﬁcations:

Release date

Data sheet status

Change notice

Supersedes

20090421

Product data sheet

-

PBSS2515E_1

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Figure 2: added

• Table 6 “Thermal characteristics”: enhanced

• Table 7 “Characteristics”: switching times added

• Figure 8 and 9: amended

• Section 13 “Legal information”: updated

PBSS2515E_1

20050418

Product data sheet

-

PBSS2515E_2

Product data sheet

Rev. 02 — 21 April 2009

10 of 12

PBSS2515E

NXP Semiconductors

15 V, 0.5 A NPN low V_CEsat(BISS) transistor

13. Legal information

13.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

13.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

PBSS2515E_2

Product data sheet

Rev. 02 — 21 April 2009

11 of 12

PBSS2515E

NXP Semiconductors

15 V, 0.5 A NPN low V_CEsat(BISS) transistor

15. Contents

1

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

Packing information. . . . . . . . . . . . . . . . . . . . . . 9

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

3

4

5

6

7

8

9

10

11

12

13

Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.1

13.2

13.3

13.4

14

15

Contact information. . . . . . . . . . . . . . . . . . . . . 11

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 21 April 2009

Document identifier: PBSS2515E_2


型号：	PBSS2515E
厂家：	NXP
描述：	15 V, 0.5 A NPN low VCEsat (BISS) transistor 15 V ， 0.5 A NPN低VCEsat晶体管（ BISS ）晶体管晶体小信号双极晶体管开关光电二极管 PC
文件：	总12页 (文件大小：121K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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