PBSS2540M,315 [NXP]
PBSS2540M - 40 V, 0.5 A NPN low VCEsat (BISS) transistor DFN 3-Pin;
| 型号： | PBSS2540M,315 |
| 厂家： | 
NXP |
| 描述： | PBSS2540M - 40 V, 0.5 A NPN low VCEsat (BISS) transistor DFN 3-Pin 开关 晶体管 |
| 文件： | 总9页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS2540M
40 V, 0.5 A
NPN low VCEsat (BISS) transistor
Product data sheet
2003 Jul 22
NXP Semiconductors
Product data sheet
40 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2540M
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board requirements.
SYMBOL
VCEO
IC
PARAMETER
MAX. UNIT
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
40
V
500
1
mA
A
ICM
RCEsat
<500
mΩ
APPLICATIONS
PINNING
• Power management:
– DC-DC converter
– Supply line switching
– Battery charger
PIN
1
DESCRIPTION
base
2
emitter
collector
3
– LCD backlighting.
• Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load drivers (e.g. relays, buzzers and
motors).
3
2
handbook, halfpage
2
DESCRIPTION
1
3
1
Low VCEsat NPN transistor in a SOT883 leadless ultra
small plastic package.
PNP complement: PBSS3540M.
Bottom view
MAM475
MARKING
TYPE NUMBER
PBSS2540M
MARKING CODE
Fig.1 Simplified outline (SOT883) and symbol.
DC
2003 Jul 22
2
NXP Semiconductors
Product data sheet
40 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2540M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
40
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
40
open collector
notes 1 and 2
6
500
1
mA
A
ICM
IBM
100
250
430
+150
150
+150
mA
mW
mW
°C
Ptot
total power dissipation
Tamb ≤ 25 °C; notes 1 and 2
Tamb ≤ 25 °C; note 1 and 3
Tstg
Tj
storage temperature
−65
−
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 μm
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; notes 1 and 2
500
290
K/W
K/W
in free air; notes 1, 3 and 4
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 μm
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
4. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Jul 22
3
NXP Semiconductors
Product data sheet
40 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2540M
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = 30 V; IE = 0
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
−
−
100
50
nA
μA
nA
VCB = 30 V; IE = 0; Tj = 150 °C
VEB = 5 V; IC = 0
−
−
IEBO
hFE
emitter-base cut-off current
DC current gain
−
−
100
−
VCE = 2 V; IC = 10 mA
200
150
50
−
−
VCE = 2 V; IC = 100 mA; note 1
VCE = 2 V; IC = 500 mA; note 1
−
−
−
−
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
−
50
mV
mV
mV
mV
mΩ
V
−
−
100
200
250
<500
1.2
1.1
−
IC = 200 mA; IB = 10 mA; note 1
−
−
IC = 500 mA; IB = 50 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
VCE = 2 V; IC = 100 mA; note 1
−
−
RCEsat
VBEsat
VBEon
fT
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
−
380
−
−
−
−
V
IC = 100 mA; VCE = 5 V;
f = 100 MHz
250
450
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
6
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Jul 22
4
NXP Semiconductors
Product data sheet
40 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2540M
MHC082
MHC085
1200
1200
handbook, halfpage
handbook, halfpage
V
BE
h
FE
(mV)
1000
1000
(1)
800
(1)
(2)
800
600
600
(2)
400
(3)
400
200
200
0
(3)
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 2 V.
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3)
T
amb = −55 °C.
(3) Tamb = 150 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MHC086
MHC084
3
10
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
(mV)
1000
(1)
800
2
10
(2)
(1)
600
(3)
(2)
(3)
400
200
10
10
−1
2
3
−1
2
3
10
1
10
10
10
1
10
10
10
I
(mA)
C
I
(mA)
C
IC/IB = 20.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3)
T
amb = −55 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Jul 22
5
NXP Semiconductors
Product data sheet
40 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2540M
MHC083
MHC087
3
10
1200
handbook, halfpage
handbook, halfpage
I
C
R
CEsat
(Ω)
(mA)
(1)
1000
(2)
(3)
2
(4)
10
(5)
(6)
800
(7)
(8)
(9)
10
1
600
(10)
(1)
(2)
(3)
400
200
0
−1
10
10
−1
2
3
1
10
10
10
0
1
2
3
4
5
I
(mA)
C
V
(V)
CE
Tamb = 25 °C.
IC/IB = 20.
(1) IB = 25 mA.
(5) IB = 15 mA.
(9) IB = 5 mA.
(1) Tamb = 150 °C.
(2) IB = 22.5 mA.
(6) IB = 12.5 mA.
(10) IB = 2.5 mA.
(2)
Tamb = 25 °C.
(3)
I
B = 20 mA.
(7)
IB = 10 mA.
(3) Tamb = −55 °C.
(4) IB = 17.5 mA.
(8) IB = 7.5 mA.
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
2003 Jul 22
6
NXP Semiconductors
Product data sheet
40 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2540M
PACKAGE OUTLINE
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
L
L
1
2
b
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
1
UNIT
A
b
b
D
E
e
e
L
L
1
1
1
max.
0.50
0.46
0.20 0.55 0.62 1.02
0.12 0.47 0.55 0.95
0.30 0.30
0.22 0.22
mm
0.03
0.35 0.65
Note
1. Including plating thickness
REFERENCES
JEDEC
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEITA
03-02-05
03-04-03
SOT883
SC-101
2003 Jul 22
7
NXP Semiconductors
Product data sheet
40 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2540M
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Jul 22
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
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Printed in The Netherlands
613514/01/pp9
Date of release: 2003 Jul 22
Document order number: 9397 750 11559
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