PBSS301ND_技术文档

PBSS301ND

20 V, 4 A NPN low V_CEsat(BISS) transistor

Rev. 02 — 25 April 2005

Product data sheet

1. Product proﬁle

1.1 General description

NPN low V_CEsatBreakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD

plastic package.

PNP complement: PBSS301PD.

1.2 Features

■ Very low collector-emitter saturation resistance

■ Ultra low collector-emitter saturation voltage

■ 4 A continuous collector current

■ Up to 15 A peak current

■ High efﬁciency due to less heat generation

1.3 Applications

■ Power management functions

■ Charging circuits

■ DC-to-DC conversion

■ MOSFET gate driving

■ Power switches (e.g. motors, fans)

■ Thin Film Transistor (TFT) backlight inverter

1.4 Quick reference data

Table 1:

Symbol

V_CEO

I_C

Quick reference data

Parameter

Conditions

Min

Typ

Max

20

4

Unit

V

collector-emitter voltage

collector current (DC)

peak collector current

open base

-

[1]

[2]

A

I_CM

single pulse;

t_p≤ 1 ms

15

A

R_CEsat

collector-emitter saturation I_C= 4 A;

resistance I_B= 400 mA

-

50

70

mΩ

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.

[2] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

2. Pinning information

Table 2:

Pinning

1

Description

collector

base

Simpliﬁed outline

Symbol

6

5

4

1, 2, 5, 6

2

3

4

emitter

1

2

3

4

5

collector

sym014

6

3. Ordering information

Table 3:

Ordering information

Type number

Package

Name

Description

Version

PBSS301ND

SC-74

plastic surface mounted package; 6 leads

SOT457

4. Marking

Table 4:

Marking codes

Type number

Marking code

PBSS301ND

C6

5. Limiting values

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Conditions

open emitter

open base

Min

Max

20

5

Unit

V

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

-

V

open collector

V

[1]

4

A

I_CM

single pulse;

15

A

t_p≤ 1 ms

I_B

base current (DC)

peak base current

-

0.8

2

A

I_BM

single pulse;

t_p≤ 1 ms

[2]

[3]

P_tot

total power dissipation

T_amb≤ 25 °C

-

360

600

750

1.1

mW

W

[4]

[1]

[2] [5]

2.5

W

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

2 of 16

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

Table 5:

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

T_j

Parameter

Conditions

Min

-

Max

150

Unit

°C

junction temperature

ambient temperature

storage temperature

T_amb

T_stg

−65

+150

°C

[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².

[5] Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width t_p≤ 10 ms.

006aaa270

1600

P

tot

(mW)

1200

(1)

(2)

(3)

800

400

0

(4)

−75

−25

25

75

125

175

(°C)

T

amb

(1) Ceramic PCB, Al₂O₃, standard footprint

(2) FR4 PCB; mounting pad for collector 6 cm²

(3) FR4 PCB; mounting pad for collector 1 cm²

(4) FR4 PCB; standard footprint

Fig 1. Power derating curves

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

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PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

6. Thermal characteristics

Table 6:

Symbol

R_th(j-a)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

350

208

160

113

50

Unit

K/W

[2]

[3]

thermal resistance from

junction to ambient

in free air

-

[4]

[1]

[2] [5]

R_th(j-sp)

thermal resistance from

junction to solder point

45

[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².

[5] Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width t_p≤ 10 ms.

006aaa271

3

10

Z

th(j-a)

(1)

(2)

(3)

(4)

(K/W)

2

10

(5)

(6)

(7)

10

(8)

(9)

(10)

1

−1

10

−5

−4

−3

−2

−1

2

3

10

1

10

t

(s)

p

FR4 PCB; standard footprint

(1) δ = 1

(2) δ = 0.75

(3) δ = 0.5

(4) δ = 0.33

(5) δ = 0.2

(6) δ = 0.1

(7) δ = 0.05

(8) δ = 0.02

(9) δ = 0.01

(10) δ = 0

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

4 of 16

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

006aaa272

3

10

Z

th(j-a)

(K/W)

(1)

(2)

(3)

(4)

2

10

(5)

(6)

(7)

10

(8)

(9)

(10)

1

−1

10

−5

−4

−3

−2

−1

2

3

10

1

10

t

(s)

p

FR4 PCB; mounting pad for collector 1 cm²

(1) δ = 1

(2) δ = 0.75

(3) δ = 0.5

(4) δ = 0.33

(5) δ = 0.2

(6) δ = 0.1

(7) δ = 0.05

(8) δ = 0.02

(9) δ = 0.01

(10) δ = 0

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

5 of 16

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

006aaa273

3

10

Z

th(j-a)

(K/W)

(1)

(2)

(3)

2

10

(4)

(5)

(6)

(7)

(8)

10

(9)

(10)

1

−1

10

−5

−4

−3

−2

−1

2

3

10

1

10

t

(s)

p

FR4 PCB; mounting pad for collector 6 cm²

(1) δ = 1

(2) δ = 0.75

(3) δ = 0.5

(4) δ = 0.33

(5) δ = 0.2

(6) δ = 0.1

(7) δ = 0.05

(8) δ = 0.02

(9) δ = 0.01

(10) δ = 0

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

6 of 16

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

7. Characteristics

Table 7:

Characteristics

T_amb= 25 °C unless otherwise speciﬁed.

Symbol Parameter Conditions

collector-base cut-off V_CB= 20 V; I_E= 0 A

Min

Typ

Max

0.1

50

Unit

µA

I_CBO

-

current

V_CB= 20 V; I_E= 0 A;

µA

T_j= 150 °C

I_CES

I_EBO

h_FE

collector-emitter

cut-off current

V_CE= 20 V; V_BE= 0 V

V_EB= 5 V; I_C= 0 A

-

0.1

µA

emitter-base cut-off

current

DC current gain

V_CE= 2 V; I_C= 0.5 A

V_CE= 2 V; I_C= 1 A

V_CE= 2 V; I_C= 2 A

V_CE= 2 V; I_C= 4 A

V_CE= 2 V; I_C= 6 A

I_C= 0.5 A; I_B= 50 mA

I_C= 1 A; I_B= 50 mA

I_C= 2 A; I_B= 200 mA

I_C= 4 A; I_B= 400 mA

I_C= 6 A; I_B= 600 mA

I_C= 4 A; I_B= 400 mA

300

450

430

400

310

230

30

-

[1]

300

-

250

-

200

-

100

-

V_CEsat

collector-emitter

saturation voltage

-

50

90

150

280

420

70

mV

mΩ

60

110

200

300

50

[1]

R_CEsat

V_BEsat

collector-emitter

saturation resistance

base-emitter

saturation voltage

I_C= 0.5 A; I_B= 50 mA

I_C= 1 A; I_B= 50 mA

I_C= 1 A; I_B= 100 mA

I_C= 4 A; I_B= 400 mA

V_CE= 2 V; I_C= 2 A

-

0.79

0.81

0.83

1.0

0.85

0.9

1

V

[1]

1.1

1

V_BEon

base-emitter turn-on

voltage

0.79

t_d

t_r

delay time

V_CC= 12.5 V; I_C= 3 A;

-

12

-

ns

I_Bon= 0.15 A;

rise time

36

ns

I_Boff= −0.15 A

t_on

t_s

turn-on time

storage time

fall time

48

ns

230

50

ns

t_f

ns

t_off

f_T

turn-off time

transition frequency

280

100

ns

V_CE= 10 V; I_C= 0.1 A;

f = 100 MHz

MHz

C_c

collector capacitance V_CB= 10 V; I_E= i_e= 0 A;

f = 1 MHz

-

60

-

pF

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

7 of 16

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

006aaa328

006aaa329

1000

1.4

BE

(mV)

1.2

V

h

FE

800

1.0

0.8

0.6

0.4

0.2

0

(1)

(2)

600

400

200

0

(1)

(2)

(3)

−1

2

3

4

5

−1

2

3

4

5

10

1

10

(mA)

10

1

10

I (mA)

C

I

C

V_CE= 2 V

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 5. DC current gain as a function of collector

current; typical values

Fig 6. Base-emitter voltage as a function of collector

current; typical values

006aaa330

006aaa331

10

V

CEsat

(V)

CEsat

(V)

1.0

1

(1)

(2)

(3)

−1

−2

−3

10

(1)

(2)

−2

10

(3)

−3

10

−1

2

3

4

5

−1

2

3

4

5

10

1

10

(mA)

10

1

10

I (mA)

C

I

C

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 7. Collector-emitter saturation voltage as a

function of collector current; typical values

Fig 8. Collector-emitter saturation voltage as a

function of collector current; typical values

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

8 of 16

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

006aaa332

006aaa333

3

1.5

10

V

BEsat

(V)

1.3

R

CEsat

(Ω)

2

10

1.1

(1)

10

0.9

0.7

(1)

(2)

(3)

(2)

(3)

1

0.5

0.3

0.1

−1

10

−2

10

−1

2

3

4

5

−1

2

3

4

5

10

1

10

(mA)

10

1

10

I (mA)

C

I

C

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 9. Base-emitter saturation voltage as a function of

collector current; typical values

Fig 10. Collector-emitter saturation resistance as a

function of collector current; typical values

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

9 of 16

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

006aaa334

006aaa335

2

10

(1)

(2)

(3)

(4)

I

C

R

CEsat

(A)

(Ω)

8

6

4

2

0

(5)

(6)

10

(7)

(8)

1

(9)

(1)

(2)

(3)

(10)

−1

10

−2

10

−1

2

3

4

5

0

0.4

0.8

1.2

1.6

V

2.0

(V)

10

1

10

I (mA)

C

CE

T_amb= 25 °C

I_C/I_B= 20

(1) I_B= 80 mA

(2) I_B= 72 mA

(3) I_B= 64 mA

(4) I_B= 56 mA

(5) I_B= 48 mA

(6) I_B= 40 mA

(7) I_B= 32 mA

(8) I_B= 24 mA

(9) I_B= 16 mA

(10) I_B= 8 mA

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 11. Collector current as a function of

collector-emitter voltage; typical values

Fig 12. Collector-emitter saturation resistance as a

function of collector current; typical values

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

10 of 16

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

8. Test information

I

B

input pulse

90 %

(idealized waveform)

I

(100 %)

Bon

10 %

I

Boff

output pulse

(idealized waveform)

I

C

90 %

I

(100 %)

C

10 %

t

f

t

r

s

d

t

off

on

006aaa003

Fig 13. BISS transistor switching time deﬁnition

V

CC

BB

R

B

R

C

V

o

(probe)

oscilloscope

450 Ω

oscilloscope

450 Ω

R2

V

I

DUT

R1

mlb826

V_CC= 12.5 V; I_C= 3 A; I_Bon= 0.15 A; I_Boff= −0.15 A

Fig 14. Test circuit for switching times

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

11 of 16

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

9. Package outline

Plastic surface mounted package; 6 leads

SOT457

D

B

E

A

X

y

H

v

M

A

E

6

5

4

Q

pin 1

index

A

1

c

1

2

3

L

p

e

b

p

w

M B

detail X

0

1

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

A

b

c

D

E

e

H

L

Q

v

w

y

p

1

p

E

0.1

0.013

0.40

0.25

1.1

0.9

0.26

0.10

3.1

2.7

1.7

1.3

3.0

2.5

0.6

0.2

0.33

0.23

mm

0.95

0.2

0.1

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

01-05-04

04-11-08

SOT457

SC-74

Fig 15. Package outline SOT457 (SC-74)

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

12 of 16

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

10. Packing information

Table 8:

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code. ^[1]

Type number Package

Description

Packing quantity

3000

-115

-125

10000

-135

[2]

[3]

PBSS301ND SOT457

4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

-165

[1] For further information and the availability of packing methods, see Section 16.

[2] T1: normal taping

[3] T2: reverse taping

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

13 of 16

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

11. Revision history

Table 9:

Revision history

Document ID

PBSS301ND_2

Modiﬁcations:

Release date Data sheet status

20050425 Product data sheet

• Section 1.3: acronym TFT explained

Change notice Doc. number

Supersedes

-

9397 750 14958 PBSS301ND_1

• Figure 2, 3 and 4: Z_threnamed to Z_th(j-a)

• Figure 11: ﬁgure notes amended

• Section 15: added

PBSS301ND_1

20050405

Product data sheet

-

9397 750 14487

-

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

14 of 16

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

12. Data sheet status

Level Data sheet status^[1]Product status^{[2] [3]}

Deﬁnition

I

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

13. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

15. Trademarks

Notice — All referenced brands, product names, service names and

14. Disclaimers

trademarks are the property of their respective owners.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

16. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

9397 750 14958

Product data sheet

Rev. 02 — 25 April 2005

15 of 16

PBSS301ND

Philips Semiconductors

20 V, 4 A NPN low V_CEsat(BISS) transistor

17. Contents

1

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test information. . . . . . . . . . . . . . . . . . . . . . . . 11

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12

Packing information. . . . . . . . . . . . . . . . . . . . . 13

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Contact information . . . . . . . . . . . . . . . . . . . . 15

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All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.

Date of release: 25 April 2005

Document number: 9397 750 14958

Published in The Netherlands


型号：	PBSS301ND
厂家：	NXP
描述：	20 V, 4 A NPN low VCEsat (BISS) transistor 20 V ， 4的NPN低VCESAT （ BISS ）晶体管晶体晶体管开关光电二极管
文件：	总16页 (文件大小：120K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PBSS301ND [NXP]

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