PBSS301PD/T1 [NXP]
TRANSISTOR 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-74, 6 PIN, BIP General Purpose Small Signal;型号: | PBSS301PD/T1 |
厂家: | NXP |
描述: | TRANSISTOR 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-74, 6 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
文件: | 总16页 (文件大小:120K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PBSS301PD
20 V, 4 A PNP low VCEsat (BISS) transistor
Rev. 02 — 25 April 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD
plastic package.
NPN complement: PBSS301ND.
1.2 Features
■ Very low collector-emitter saturation resistance
■ Ultra low collector-emitter saturation voltage
■ 4 A continuous collector current
■ Up to 15 A peak current
■ High efficiency due to less heat generation
1.3 Applications
■ Power management functions
■ Charging circuits
■ DC-to-DC conversion
■ MOSFET gate driving
■ Power switches (e.g. motors, fans)
■ Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
Quick reference data
Parameter
Conditions
Min
Typ
Max
−20
−4
Unit
V
collector-emitter voltage
collector current (DC)
peak collector current
open base
-
-
-
-
-
-
[1]
[2]
A
ICM
single pulse;
tp ≤ 1 ms
−15
A
RCEsat
collector-emitter saturation IC = −4 A;
resistance IB = −400 mA
-
50
70
mΩ
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Pinning
Pin
1
Description
collector
collector
base
Simplified outline
Symbol
6
5
4
1, 2, 5, 6
2
3
3
4
emitter
1
2
3
4
5
collector
collector
sym030
6
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
Description
Version
PBSS301PD
SC-74
plastic surface mounted package; 6 leads
SOT457
4. Marking
Table 4:
Marking codes
Type number
Marking code
PBSS301PD
C8
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
−20
−20
−5
Unit
V
collector-base voltage
open emitter
-
-
-
-
-
collector-emitter voltage open base
V
emitter-base voltage
collector current (DC)
peak collector current
open collector
V
[1]
−4
A
ICM
single pulse;
−15
A
tp ≤ 1 ms
IB
base current (DC)
peak base current
-
-
−0.8
−2
A
A
IBM
single pulse;
tp ≤ 1 ms
[2]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
-
-
-
-
360
600
750
1.1
mW
mW
mW
W
[4]
[1]
[2] [5]
2.5
W
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
2 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
Table 5:
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Tj
Parameter
Conditions
Min
-
Max
150
Unit
°C
junction temperature
ambient temperature
storage temperature
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[5] Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width tp ≤ 10 ms.
006aaa270
1600
P
tot
(mW)
1200
(1)
(2)
(3)
800
400
0
(4)
−75
−25
25
75
125
175
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB; collector mounting pad for collector 6 cm2
(3) FR4 PCB; collector mounting pad for collector 1 cm2
(4) FR4 PCB; standard footprint
Fig 1. Power derating curves
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
3 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
350
208
160
113
50
Unit
K/W
K/W
K/W
K/W
K/W
K/W
[2]
[3]
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
-
-
-
-
-
-
[4]
[1]
[2] [5]
Rth(j-sp)
thermal resistance from
junction to solder point
45
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[5] Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width tp ≤ 10 ms.
006aaa271
3
10
Z
th(j-a)
(1)
(2)
(3)
(4)
(K/W)
2
10
(5)
(6)
(7)
10
(8)
(9)
(10)
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB; standard footprint
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
4 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
006aaa272
3
10
Z
th(j-a)
(K/W)
(1)
(2)
(3)
(4)
2
10
(5)
(6)
(7)
10
(8)
(9)
(10)
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB; mounting pad for collector 1 cm2
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
5 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
006aaa273
3
10
Z
th(j-a)
(K/W)
(1)
(2)
(3)
2
10
(4)
(5)
(6)
(7)
(8)
10
(9)
(10)
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB; mounting pad for collector 6 cm2
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
6 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
collector-base cut-off VCB = −20 V; IE = 0 A
Min
Typ
Max
−0.1
−50
Unit
µA
ICBO
-
-
-
-
current
VCB = −20 V; IE = 0 A;
Tj = 150 °C
µA
ICES
IEBO
hFE
collector-emitter
cut-off current
VCE = −20 V; VBE = 0 V
-
-
-
-
−0.1
−0.1
µA
µA
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
DC current gain
VCE = −2 V; IC = −0.5 A
VCE = −2 V; IC = −1 A
VCE = −2 V; IC = −2 A
VCE = −2 V; IC = −4 A
VCE = −2 V; IC = −6 A
IC = −0.5 A; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −2 A; IB = −200 mA
IC = −4 A; IB = −400 mA
IC = −6 A; IB = −600 mA
IC = −4 A; IB = −400 mA
250
400
400
330
200
130
−35
−65
-
[1]
[1]
[1]
[1]
250
-
200
-
120
-
80
-
-
VCEsat
collector-emitter
saturation voltage
−50
−90
mV
mV
mV
mV
mV
mΩ
-
-
−110 −150
−200 −280
−300 −420
[1]
[1]
[1]
-
-
RCEsat
VBEsat
collector-emitter
saturation resistance
-
50
70
base-emitter
saturation voltage
IC = −0.5 A; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −100 mA
IC = −4 A; IB = −400 mA
-
-
-
-
-
−0.8
−0.85
V
V
V
V
V
−0.84 −0.9
−0.84 −1
[1]
[1]
−1.0
−0.8
−1.1
−1
VBEon
base-emitter turn-on VCE = −2 V; IC = −2 A
voltage
td
tr
delay time
VCC = −12.5 V; IC = −3 A;
-
-
-
-
-
-
-
10
-
-
-
-
-
-
-
ns
IBon = −0.15 A;
rise time
35
ns
IBoff = 0.15 A
ton
ts
turn-on time
storage time
fall time
45
ns
200
80
ns
tf
ns
toff
fT
turn-off time
transition frequency
280
80
ns
VCE = −10 V; IC = −0.1 A;
MHz
f = 100 MHz
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
-
80
-
pF
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
7 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
006aaa336
006aaa337
1000
−1.6
h
FE
V
BE
(mV)
800
(1)
(2)
−1.2
600
400
200
0
−0.8
−0.4
0
(1)
(2)
(3)
(3)
−1
2
3
4
5
−1
2
3
4
5
−10
−1
−10
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
−10
(mA)
I
I
C
C
VCE = −2 V
VCE = −2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Base-emitter voltage as a function of collector
current; typical values
006aaa338
006aaa339
−10
−10
V
V
CEsat
(V)
CEsat
(V)
−1
−1
(1)
(2)
(3)
−1
−1
−10
−10
−10
−10
−10
−10
(1)
(2)
−2
−2
(3)
−3
−3
−1
2
3
4
5
−1
2
3
4
5
−10
−1
−10
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
8 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
006aaa340
006aaa341
3
−1.4
10
R
CEsat
(Ω)
V
BEsat
(V)
2
10
−1.1
−0.9
−0.7
−0.5
−0.3
−0.1
(1)
10
(1)
(2)
(3)
(2)
(3)
1
−1
10
−2
10
−1
2
3
4
5
−1
2
3
4
5
−10
−1
−10
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 9. Base-emitter saturation voltage as a function of
collector current; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
9 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
006aaa342
006aaa343
2
−10
10
(2)
(3)
(4)
(5)
(1)
I
C
(A)
R
CEsat
(Ω)
(6)
−8
10
(7)
(8)
(9)
−6
−4
−2
0
1
(10)
(1)
(2)
(3)
−1
10
−2
10
−1
2
3
4
5
0
−0.4
−0.8
−1.2
−1.6
−2.0
(V)
−10
−1
−10
−10
−10
−10
−10
(mA)
V
I
CE
C
Tamb = 25 °C
(1) IB = −200 mA
(2) IB = −180 mA
(3) IB = −160 mA
(4) IB = −140 mA
(5) IB = −120 mA
(6) IB = −100 mA
(7) IB = −80 mA
(8) IB = −60 mA
(9) IB = −40 mA
(10) IB = −20 mA
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
10 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
8. Test information
−
I
B
input pulse
90 %
(idealized waveform)
−
I
(100 %)
Bon
10 %
−
I
Boff
output pulse
−
(idealized waveform)
I
C
90 %
−
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig 13. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
450 Ω
oscilloscope
450 Ω
R2
V
I
DUT
R1
mgd624
VCC = −12.5 V; IC = −3 A; IBon = −0.15 A; IBoff = 0.15 A
Fig 14. Test circuit for switching times
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
11 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
9. Package outline
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
01-05-04
04-11-08
SOT457
SC-74
Fig 15. Package outline SOT457 (SC-74)
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
12 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
10. Packing information
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number Package
Description
Packing quantity
3000
-115
-125
10000
-135
[2]
[3]
PBSS301PD SOT457
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-165
[1] For further information and the availability of packing methods, see Section 16.
[2] T1: normal taping
[3] T2: reverse taping
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
13 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
11. Revision history
Table 9:
Revision history
Document ID
PBSS301PD_2
Modifications:
Release date Data sheet status
20050425 Product data sheet
• Section 1.3: acronym TFT explained
Change notice Doc. number
Supersedes
-
9397 750 14959 PBSS301PD_1
• Figure 2, 3 and 4: Zth renamed to Zth(j-a)
• Figure 11: figure notes amended
• Section 15: added
PBSS301PD_1
20050404
Product data sheet
-
9397 750 14486
-
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
14 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
12. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
Notice — All referenced brands, product names, service names and
14. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14959
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
15 of 16
PBSS301PD
Philips Semiconductors
20 V, 4 A PNP low VCEsat (BISS) transistor
17. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test information. . . . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Packing information. . . . . . . . . . . . . . . . . . . . . 13
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information . . . . . . . . . . . . . . . . . . . . 15
3
4
5
6
7
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9
10
11
12
13
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15
16
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 25 April 2005
Document number: 9397 750 14959
Published in The Netherlands
相关型号:
PBSS301PD/T2
TRANSISTOR 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-74, 6 PIN, BIP General Purpose Small Signal
NXP
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