PBSS302NZ [NXP]
20 V, 5.8 A NPN low VCEsat (BISS) transistor; 20 V ， 5.8 NPN低VCEsat晶体管（ BISS ）晶体管
| 型号： | PBSS302NZ |
| 厂家： | 
NXP |
| 描述： | 20 V, 5.8 A NPN low VCEsat (BISS) transistor |
| 文件： | 总14页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor
Rev. 01 — 8 September 2006
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PZ.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I DC-to-DC conversion
I MOSFET gate driving
I Motor control
I Charging circuits
I Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
20
Unit
V
VCEO
IC
collector-emitter voltage open base
collector current
-
-
-
-
-
-
5.8
A
ICM
peak collector current
single pulse;
11.6
A
tp ≤ 1 ms
[1]
RCEsat
collector-emitter
IC = 4 A;
-
30
43
mΩ
saturation resistance
IB = 200 mA
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS302NZ
Philips Semiconductors
20 V, 5.8 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Symbol
4
2, 4
2
collector
emitter
3
1
4
collector
1
2
3
3
sym016
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS302NZ
SC-73
plastic surface-mounted package with increased heat SOT223
sink; 4 leads
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS302NZ
S302NZ
PBSS302NZ_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 8 September 2006
2 of 14
PBSS302NZ
Philips Semiconductors
20 V, 5.8 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
20
Unit
V
collector-base voltage
open emitter
-
-
-
-
-
collector-emitter voltage open base
20
V
emitter-base voltage
collector current
open collector
5
V
5.8
11.6
A
ICM
peak collector current
single pulse;
A
tp ≤ 1 ms
[1]
[2]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
0.7
W
W
W
°C
°C
°C
-
1.7
-
2
Tj
junction temperature
ambient temperature
storage temperature
-
150
+150
+150
Tamb
Tstg
−65
−65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa560
2.5
P
tot
(W)
(1)
(2)
2.0
1.5
1.0
0.5
0
(3)
−75
−25
25
75
125
175
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
PBSS302NZ_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 8 September 2006
3 of 14
PBSS302NZ
Philips Semiconductors
20 V, 5.8 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
179
74
Unit
K/W
K/W
K/W
K/W
[1]
[2]
[3]
Rth(j-a)
thermal resistance from
in free air
-
-
-
-
-
-
-
-
junction to ambient
63
Rth(j-sp)
thermal resistance from
junction to solder point
15
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa561
3
10
Z
th(j-a)
(K/W)
δ = 1
0.75
0.33
2
10
0.50
0.20
0.10
0.05
10
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS302NZ_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 8 September 2006
4 of 14
PBSS302NZ
Philips Semiconductors
20 V, 5.8 A NPN low VCEsat (BISS) transistor
006aaa562
2
10
δ = 1
0.75
Z
th(j-a)
0.50
(K/W)
0.33
0.20
0.10
0.05
10
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa563
2
10
δ = 1
0.75
0.33
Z
th(j-a)
(K/W)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS302NZ_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 8 September 2006
5 of 14
PBSS302NZ
Philips Semiconductors
20 V, 5.8 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
collector-basecut-off VCB = 20 V; IE = 0 A
Min
Typ
Max
100
50
Unit
nA
ICBO
-
-
-
-
current
VCB = 20 V; IE = 0 A;
µA
Tj = 150 °C
IEBO
hFE
emitter-base cut-off VEB = 5 V; IC = 0 A
current
-
-
100
nA
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
DC current gain
VCE = 2 V; IC = 0.5 A
VCE = 2 V; IC = 1 A
VCE = 2 V; IC = 2 A
VCE = 2 V; IC = 4 A
VCE = 2 V; IC = 7 A
IC = 0.5 A; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 10 mA
IC = 2 A; IB = 40 mA
IC = 4 A; IB = 200 mA
IC = 4 A; IB = 400 mA
IC = 4 A; IB = 40 mA
IC = 5.8 A; IB = 290 mA
IC = 4 A; IB = 200 mA
IC = 4 A; IB = 40 mA
IC = 1 A; IB = 100 mA
IC = 4 A; IB = 400 mA
300
570
550
520
450
350
20
-
300
-
250
-
200
-
200
-
VCEsat
collector-emitter
saturation voltage
-
-
-
-
-
-
-
-
-
-
-
-
-
25
50
70
100
170
165
240
250
43
60
0.9
1.05
0.85
mV
mV
mV
mV
mV
mV
mV
mV
mΩ
mΩ
V
35
50
70
120
115
155
170
30
RCEsat
VBEsat
VBEon
collector-emitter
saturation resistance
38
base-emitter
saturation voltage
0.82
0.92
0.75
V
base-emitter turn-on VCE = 2 V; IC = 2 A
voltage
V
td
tr
delay time
rise time
VCC = 12.5 V; IC = 3 A;
-
-
-
-
-
-
-
15
-
-
-
-
-
-
-
ns
IBon = 0.15 A;
40
ns
IBoff = −0.15 A
ton
ts
turn-on time
storage time
fall time
55
ns
270
85
ns
tf
ns
toff
fT
turn-off time
355
140
ns
transition frequency VCE = 10 V; IC = 100 mA;
f = 100 MHz
MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
95
150
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS302NZ_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 8 September 2006
6 of 14
PBSS302NZ
Philips Semiconductors
20 V, 5.8 A NPN low VCEsat (BISS) transistor
006aaa572
006aaa578
1000
14
I
C
(A)
12
IB (mA) = 50
h
FE
(1)
(2)
45
40
35
30
25
20
800
10
8
600
400
200
0
15
10
6
(3)
4
5
2
0
−1
2
3
4
10
1
10
10
10
10
(mA)
0
1
2
3
4
5
I
V
CE
(V)
C
VCE = 2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
006aaa573
006aaa576
1.2
1.2
V
(V)
V
BE
BEsat
(V)
0.8
0.8
0.4
0
(1)
(2)
(3)
(1)
(2)
(3)
0.4
0
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function of
collector current; typical values
PBSS302NZ_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 8 September 2006
7 of 14
PBSS302NZ
Philips Semiconductors
20 V, 5.8 A NPN low VCEsat (BISS) transistor
006aaa574
006aaa575
1
1
V
V
CEsat
(V)
CEsat
(V)
−1
−1
−2
−3
10
10
(1)
(2)
(3)
(1)
(2)
−2
10
10
10
(3)
−3
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa577
006aaa579
3
3
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
2
2
10
10
(1)
(3)
(2)
10
10
1
1
(1)
(2)
(3)
−1
−1
10
10
−2
−2
10
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS302NZ_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 8 September 2006
8 of 14
PBSS302NZ
Philips Semiconductors
20 V, 5.8 A NPN low VCEsat (BISS) transistor
8. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig 13. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mlb826
VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = −0.15 A
Fig 14. Test circuit for switching times
PBSS302NZ_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 8 September 2006
9 of 14
PBSS302NZ
Philips Semiconductors
20 V, 5.8 A NPN low VCEsat (BISS) transistor
9. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3 3.7
6.7 3.3
1
2
3
0.8
0.6
0.32
0.22
2.3
4.6
Dimensions in mm
04-11-10
Fig 15. Package outline SOT223 (SC-73)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
1000
4000
PBSS302NZ
SOT223
8 mm pitch, 12 mm tape and reel
-115
-135
[1] For further information and the availability of packing methods, see Section 14.
PBSS302NZ_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 8 September 2006
10 of 14
PBSS302NZ
Philips Semiconductors
20 V, 5.8 A NPN low VCEsat (BISS) transistor
11. Soldering
7.00
3.85
3.60
3.50
0.30
1.20
(4 ×)
4
7.40
4.80
3.90
7.65
1
2
3
1.20 (3 ×)
1.30 (3 ×)
5.90
6.15
solder lands
solder paste
occupied area
solder resist
sot223_fr
Dimensions in mm
Fig 16. Reflow soldering footprint SOT223 (SC-73)
8.90
6.70
4
4.30 8.10 8.70
1
2
3
1.90 (2×)
1.10
7.30
transport direction during soldering
sot223_fw
solder lands
occupied area
solder resist
Dimensions in mm
Fig 17. Wave soldering footprint SOT223 (SC-73)
PBSS302NZ_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 8 September 2006
11 of 14
PBSS302NZ
Philips Semiconductors
20 V, 5.8 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS302NZ_1
20060908
Product data sheet
-
-
PBSS302NZ_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 8 September 2006
12 of 14
PBSS302NZ
Philips Semiconductors
20 V, 5.8 A NPN low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
malfunction of a Philips Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
PBSS302NZ_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 8 September 2006
13 of 14
PBSS302NZ
Philips Semiconductors
20 V, 5.8 A NPN low VCEsat (BISS) transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Koninklijke Philips Electronics N.V. 2006.
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Date of release: 8 September 2006
Document identifier: PBSS302NZ_1
相关型号：
PBSS302PD/T1
TRANSISTOR 4000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-74, 6 PIN, BIP General Purpose Small Signal
NXP
PBSS302PD/T2
TRANSISTOR 4000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-74, 6 PIN, BIP General Purpose Small Signal
NXP
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