PBSS4130T [NXP]
30 V, 1 A NPN low VCEsat (BISS) transistor; 30 V ，1 A NPN低VCEsat晶体管（ BISS ）晶体管
| 型号： | PBSS4130T |
| 厂家： | 
NXP |
| 描述： | 30 V, 1 A NPN low VCEsat (BISS) transistor |
| 文件： | 总7页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4130T
30 V, 1 A
NPN low VCEsat (BISS) transistor
Product specification
2003 Nov 27
Philips Semiconductors
Product specification
30 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS4130T
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency leading to less heat generation
• Reduced printed-circuit board requirements
SYMBOL
PARAMETER
MAX. UNIT
VCEO
IC
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
30
1
V
A
ICM
3
A
• Cost effective alternative to MOSFETs in specific
RCEsat
220
mΩ
applications.
PINNING
PIN
APPLICATIONS
DESCRIPTION
• Power management
– DC/DC conversion
– Supply line switching
– Battery charger
1
2
3
base
emitter
collector
– LCD backlighting.
• Peripheral driver
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
handbook, halfpage
3
– Inductive load drivers (e.g. relays, buzzers and
motors).
3
2
1
DESCRIPTION
NPN BISS transistor in a SOT23 plastic package providing
ultra low VCEsat and RCEsat parameters.
PNP complement: PBSS5130T.
1
2
Top view
MAM255
MARKING
TYPE NUMBER
PBSS4130T
MARKING CODE(1)
Fig.1 Simplified outline (SOT23) and symbol.
*3C
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
PBSS4130T
−
SOT23
2003 Nov 27
2
Philips Semiconductors
Product specification
30 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS4130T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
40
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
V
V
V
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
30
open collector
5
1
ICM
3
IBM
300
300
480
+150
150
+150
mA
mW
mW
°C
Ptot
total power dissipation
T
amb ≤ 25 °C; note 1
amb ≤ 25 °C; note 2
T
Tstg
Tj
storage temperature
−65
−
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
417
UNIT
K/W
K/W
Rth j-a
thermal resistance from junction to ambient in free air; note 1
in free air; note 2
260
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2003 Nov 27
3
Philips Semiconductors
Product specification
30 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS4130T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = 30 V; IE = 0
CB = 30 V; IE = 0; Tj = 150 °C
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
−
−
100
50
nA
µA
nA
V
−
−
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = 4 V; IC = 0
−
−
100
−
VCE = 2 V; IC = 100 mA
350
300
300
−
470
450
420
−
VCE = 2 V; IC = 500 mA
−
VCE = 2 V; IC = 1 A
−
VCEsat
collector-emitter saturation voltage IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
90
mV
mV
mV
mV
mΩ
V
−
−
120
220
270
240
1.1
0.75
−
IC = 750 mA; IB = 15 mA
−
−
IC = 1 A; IB = 50 mA; note 1
−
−
RCEsat
VBEsat
VBEon
fT
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
IC = 500 mA; IB = 50 mA; note 1
IC = 1 A; IB = 100 mA; note 1
VCE = 2 V; IC = 100 mA
−
−
−
−
−
−
V
IC = 100 mA; VCE = 10 V;
f = 100 MHz
100
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
20
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2003 Nov 27
4
Philips Semiconductors
Product specification
30 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS4130T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Nov 27
5
Philips Semiconductors
Product specification
30 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS4130T
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Nov 27
6
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/01/pp7
Date of release: 2003 Nov 27
Document order number: 9397 750 11897
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