PBSS4140S [NXP]
40 V low VCEsat NPN transistor; 40伏的低VCEsat晶体管NPN晶体管
| 型号： | PBSS4140S |
| 厂家： | 
NXP |
| 描述： | 40 V low VCEsat NPN transistor |
| 文件： | 总8页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
PBSS4140S
40 V low VCEsat NPN transistor
Product specification
2001 Nov 27
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140S
FEATURES
QUICK REFERENCE DATA
• High power dissipation (830 mW)
• Ultra low collector-emitter saturation voltage
• 1 A continuous current
SYMBOL
PARAMETER
MAX. UNIT
VCEO
IC
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
40
1
V
A
A
• High current switching
ICM
2
• Improved device reliability due to reduced heat
RCEsat
<500 mΩ
generation.
PINNING
PIN
APPLICATIONS
DESCRIPTION
• Medium power switching and muting
• Linear regulators
1
2
3
base
collector
emitter
• DC/DC converter
• LCD back-lighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
1
2
3
handbook, halfpage
2
3
DESCRIPTION
1
NPN low VCEsat transistor in a SOT54 plastic package.
PNP complement: PBSS5140S.
MAM459
MARKING
TYPE NUMBER
PBSS4140S
MARKING CODE
Fig.1 Simplified outline (SOT54) and symbol.
S4140S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
CONDITIONS
open emitter
MIN.
MAX.
40
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
V
V
V
A
A
A
open base
40
open collector
5
1
ICM
2
IBM
1
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb ≤ 25 °C; note 1
830
+150
150
+150
mW
°C
−65
−
°C
Tamb
−65
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
2001 Nov 27
2
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140S
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
150
UNIT
Rth j-a
thermal resistance from junction to ambient in free air; note 1
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
VCB = 40 V; IC = 0
CB = 40 V; IC = 0; Tamb = 150 °C
VCE = 30 V; IB = 0
MIN.
TYP.
MAX.
100
50
UNIT
collector-base cut-off
current
−
−
−
−
−
−
nA
µA
nA
V
ICEO
collector-emitter cut-off
current
100
IEBO
hFE
emitter-base cut-off current VEB = 5 V; IC = 0
−
−
−
−
−
−
−
−
100
−
nA
DC current gain
VCE = 5 V; IC = 1 mA
300
300
200
−
VCE = 5 V; IC = 500 mA
900
−
VCE = 5 V; IC = 1 A
VCEsat
collector-emitter saturation IC = 100 mA; IB = 1 mA
200
250
500
<500
1.2
mV
mV
mV
mΩ
V
voltage
IC = 500 mA; IB = 50 mA
−
IC = 1 A; IB = 100 mA
−
RCEsat
VBEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
IC = 1 A; IB = 100 mA
−
260
base-emitter saturation
voltage
−
−
VBEon
base-emitter turn-on
voltage
VCE = 5 V; IC = 1 A
−
−
1.1
V
fT
transition frequency
collector capacitance
IC = 50 mA; VCE = 10 V; f = 100 MHz 150
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
−
MHz
pF
Cc
−
10
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 Nov 27
3
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140S
MHC077
MHC078
1000
10
handbook, halfpage
handbook, halfpage
h
FE
V
(1)
BE
800
(V)
600
(2)
1
(1)
(2)
400
(3)
(3)
200
−1
10
0
10
−1
2
3
I
4
−1
2
3
I
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
C
C
VCE = 5 V.
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MHC079
MHC080
3
2
10
10
handbook, halfpage
handbook, halfpage
V
R
CEsat
CEsat
(Ω)
(mV)
2
10
10
(1)
(2)
(3)
10
1
(1)
(2)
(3)
−1
10
1
2
3
4
−1
2
3
I
4
1
10
10
10
10
10
1
10
10
10
10
(mA)
I
(mA)
C
C
IC/IB = 10.
IC/IB = 10.
(1) amb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1)
Tamb = 150 °C.
T
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
2001 Nov 27
4
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140S
MHC081
400
handbook, halfpage
f
T
(MHz)
300
200
100
0
0
200
400
600
800
I
1000
(mA)
C
VCE = 10 V.
Fig.6 Transition frequency as a function of
collector current.
2001 Nov 27
5
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140S
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
b
b
c
D
d
E
e
e
L
L
1
1
1
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-02-28
SOT54
TO-92
SC-43
2001 Nov 27
6
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140S
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Nov 27
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2001 Nov 27
Document order number: 9397 750 08839
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