PBSS4160DPN [NXP]
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor; 60 V ，1 A NPN / PNP低VCEsat晶体管（ BISS ）晶体管
| 型号： | PBSS4160DPN |
| 厂家： | 
NXP |
| 描述： | 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor |
| 文件： | 总14页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS4160DPN
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Rev. 01 — 3 June 2004
Objective data sheet
1. Product profile
1.1 General description
NPN/PNP low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package.
1.2 Features
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High efficiency, reduces heat generation
■ Reduces printed-circuit board area required.
1.3 Applications
■ Power management
◆ DC-to-DC conversion
◆ Supply line switching
■ Peripheral driver
◆ Inductive load drivers (e.g. relays, buzzers and motors)
◆ Driver in low supply voltage applications (e.g. lamps and LEDs).
1.4 Quick reference data
Table 1:
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
NPN
60
Unit
PNP
−60
−1
VCEO
IC
collector-emitter voltage
collector current (DC)
-
-
-
-
-
-
V
A
A
1
ICRP
repetitive peak collector
current
2
−1.5
RCEsat
equivalent on-resistance
-
-
250
330
mΩ
PBSS4160DPN
Philips Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Pin
Discrete pinning
Description
Simplified outline
Symbol
1, 4
emitter TR1; TR2
base TR1; TR2
collector TR1; TR2
6
5
2
4
6
5
4
2, 5
6, 3
TR2
TR1
1
1
2
3
3
SOT457
sym019
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
Description
Version
PBSS4160DPN -
plastic surface mounted package; 6 leads
SOT457
4. Marking
Table 4:
Marking
Type number
Marking code[1]
PBSS4160DPN
B4
[1] Made in Malaysia.
9397 750 12701
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 — 3 June 2004
2 of 14
PBSS4160DPN
Philips Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
Max
Unit
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
open emitter
open base
-
-
-
-
-
80
60
5
V
V
V
A
A
open collector
1
ICM
t = 1 ms or
limited by
Tj(max)
2
ICRP
repetitive peak collector
current
[1]
[1]
NPN
-
-
-
-
2
A
PNP
1.5
300
1
A
IB
base current (DC)
peak base current
mA
A
IBM
tp ≤ 300 µs;
δ ≤ 0.02
[2]
[3]
[1]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
310
370
1.1
mW
mW
W
-
-
Tj
junction temperature
-
150
+150
°C
Tamb
operating ambient
temperature
−65
°C
Tstg
storage temperature
−65
+150
600
°C
Per device
Ptot
[3]
total power dissipation
Tamb ≤ 25 °C
-
mW
[1] Device mounted on a ceramic circuit board, Al2O3, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for
collector 1 cm2.
6. Thermal characteristics
Table 6:
Symbol
Per transistor
Rth(j-a) thermal resistance from junction
to ambient
Thermal characteristics
Parameter
Conditions
Typ
Unit
[1]
[2]
in free air
340
110
K/W
K/W
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for
collector 1 cm2.
[2] Device mounted on a ceramic circuit board, Al2O3, standard footprint.
9397 750 12701
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 — 3 June 2004
3 of 14
PBSS4160DPN
Philips Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
Unit
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
ICBO
collector-base cut-off VCB = 60 V; IE = 0 A
-
-
-
-
100
50
nA
current
VCB = 60 V; IE = 0 A;
µA
Tj = 150 °C
ICES
IEBO
VBEsat
VBEon
fT
collector-emitter
cut-off current
VCE = 60 V; VBE = 0 V
VEB = 5 V; IC = 0 A
IC = 1 A; IB = 50 mA
-
-
100
100
1.1
0.9
-
nA
nA
V
emitter-base cut-off
current
-
-
base-emitter
saturation voltage
-
0.95
0.82
220
base-emitter turn-on VCE = 5 V; IC = 1 A
voltage
-
V
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz
150
MHz
TR1 (NPN)
hFE
DC current gain
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
250
400
350
150
90
-
[1]
[1]
200
-
100
-
VCEsat
collector-emitter
saturation voltage
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 1 A; IB = 100 mA
-
-
-
-
110
140
250
250
mV
mV
mV
mΩ
110
200
200
[1]
[1]
RCEsat
Cc
equivalent
on-resistance
collector capacitance VCB = 10 V; IE = Ie = 0 A;
f = 1 MHz
-
5.5
10
pF
TR2 (PNP)
hFE
DC current gain
VCE = −5 V; IC = −1 mA
VCE = −5 V; IC = −500 mA
VCE = −5 V; IC = −1 A
200
350
-
[1]
[1]
150
250
-
100
160
-
VCEsat
collector-emitter
saturation voltage
IC = −100 mA; IB = −1 mA
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −100 mA
IC = −1 A; IB = −100 mA
-
-
-
-
−110
−120
−220
220
−160
−175
−330
330
mV
mV
mV
mΩ
[1]
[1]
RCEsat
Cc
equivalent
on-resistance
collector capacitance VCB = −10 V; IE = Ie = 0 A;
-
9
15
pF
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
9397 750 12701
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 — 3 June 2004
4 of 14
PBSS4160DPN
Philips Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
mle130
mle133
1.2
800
h
FE
V
BE
(V)
(1)
(2)
(3)
600
(1)
0.8
0.4
0
(2)
400
(3)
200
0
10
−1
2
3
4
−1
2
3
I
4
10
1
10
10
10
10
(mA)
C
1
10
10
10
10
(mA)
I
C
TR1 (NPN)
VCE = 5 V.
TR1 (NPN)
VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig 1. DC current gain as a function of collector
current; typical values.
Fig 2. Base-emitter voltage as a function of collector
current; typical values.
mle135
mle104
1
1
V
CEsat
(V)
V
CEsat
(V)
−1
10
−1
10
(1)
(3)
(2)
−2
10
10
(1)
(3)
(2)
−3
−2
10
−1
2
3
I
4
−1
2
3
4
10
1
10
10
10
10
10
1
10
10
10
10
(mA)
(mA)
I
C
C
TR1 (NPN)
TR1 (NPN)
IC/IB = 10.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 3. Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values.
9397 750 12701
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 — 3 June 2004
5 of 14
PBSS4160DPN
Philips Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
mle129
mle134
1
1.2
V
V
BEsat
(V)
CEsat
(V)
(1)
(2)
(3)
0.8
(1)
(2)
−1
10
0.4
−2
10
0
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
I
I
C
C
TR1 (NPN)
Tamb = 25 °C.
TR1 (NPN)
IC/IB = 20.
(1) IC/IB = 100.
(2) IC/IB = 50.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig 6. Base-emitter saturation voltage as a function of
collector current; typical values.
9397 750 12701
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 — 3 June 2004
6 of 14
PBSS4160DPN
Philips Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
mle132
mle131
3
2
10
(6) (5) (4) (3)
(2)
(1)
I
C
R
CEsat
(Ω)
(A)
1.6
2
10
(7)
(8)
1.2
0.8
(9)
10
(10)
1
(1)
(3)
0.4
0
(2)
−1
10
−1
2
3
4
0
1
2
3
4
5
10
1
10
10
10
10
I (mA)
C
V
CE
(V)
TR1 (NPN)
Tamb = 25 °C.
TR1 (NPN)
IC/IB = 20.
(1) IB = 60 mA.
(2) IB = 54 mA.
(3) IB = 48 mA.
(4) IB = 42 mA.
(5) IB = 36 mA.
(6) IB = 30 mA.
(7) IB = 24 mA.
(8) IB = 18 mA.
(9) IB = 12 mA.
(10) IB = 6 mA.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 7. Collector current as a function of
collector-emitter voltage; typical values.
Fig 8. Collector-emitter equivalent on-resistance as a
function of collector current; typical values.
9397 750 12701
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 — 3 June 2004
7 of 14
PBSS4160DPN
Philips Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
mle124
mle122
600
−1.2
V
(V)
BE
h
FE
(1)
(2)
(1)
(2)
(3)
400
−0.8
−0.4
0
200
(3)
0
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
TR2 (PNP)
TR2 (PNP)
VCE = −5 V.
VCE = −5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig 9. DC current gain as a function of collector
current; typical values.
Fig 10. Base-emitter voltage as a function of collector
current; typical values.
mle126
mle119
−10
−1
V
V
CEsat
(V)
CEsat
(V)
−1
−1
−10
(1)
(3)
(2)
−1
−2
−10
−10
(2) (1)
(3)
−2
−3
−10
−10
−1
2
3
I
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
C
I
C
TR2 (PNP)
TR2 (PNP)
IC/IB = 20.
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig 12. Collector-emitter saturation voltage as a
function of collector current; typical values.
9397 750 12701
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 — 3 June 2004
8 of 14
PBSS4160DPN
Philips Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
mle120
mle123
−1.2
−10
V
BEsat
V
(V)
−1
CEsat
(V)
(1)
(2)
(3)
−1
−0.8
−0.6
−0.4
−0.2
−1
−10
(1)
(2)
−2
−10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
I
I
C
C
TR2 (PNP)
TR2 (PNP)
Tamb = 25 °C.
IC/IB = 20.
(1) IC/IB = 100.
(2) IC/IB = 50.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig 13. Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig 14. Base-emitter saturation voltage as a function of
collector current; typical values.
9397 750 12701
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 — 3 June 2004
9 of 14
PBSS4160DPN
Philips Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
mle125
mle121
3
−2
10
(6) (5) (4) (3)
(2)
(1)
I
C
R
CEsat
(A)
(Ω)
−1.6
2
10
(7)
(8)
−1.2
−0.8
(9)
10
(10)
1
(1)
(3)
−0.4
(2)
−1
10
0
−1
2
3
4
0
−1
−2
−3
−4
−5
(V)
−10
−1
−10
−10
−10
−10
I (mA)
C
V
CE
TR2 (PNP)
Tamb = 25 °C.
TR2 (PNP)
IC/IB = 20.
(1) IB = −40 mA.
(2) IB = −36 mA.
(3) IB = −32 mA.
(4) IB = −28 mA.
(5) IB = −24 mA.
(6) IB = −20 mA.
(7) IB = −16 mA.
(8) IB = −12 mA.
(9) IB = −8 mA.
(10) IB = −4 mA.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 15. Collector current as a function of
collector-emitter voltage; typical values.
Fig 16. Collector-emitter equivalent on-resistance as a
function of collector current; typical values.
9397 750 12701
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 — 3 June 2004
10 of 14
PBSS4160DPN
Philips Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
8. Package outline
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-74
97-02-28
01-05-04
SOT457
Fig 17. Package outline.
9397 750 12701
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 — 3 June 2004
11 of 14
PBSS4160DPN
Philips Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
9. Revision history
Table 8:
Revision history
Document ID
Release date Data sheet status
20040603 Objective data
Change notice Order number
9397 750 12701
Supersedes
PBSS4160DPN_1
-
-
9397 750 12701
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 — 3 June 2004
12 of 14
PBSS4160DPN
Philips Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
10. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
12. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 12701
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 — 3 June 2004
13 of 14
PBSS4160DPN
Philips Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 3 June 2004
Document order number: 9397 750 12701
Published in The Netherlands
相关型号：
PBSS4160DPN/T1
TRANSISTOR 1000 mA, 60 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, 6 PIN, BIP General Purpose Small Signal
NXP
PBSS4160DPN/T2
TRANSISTOR 1000 mA, 60 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, 6 PIN, BIP General Purpose Small Signal
NXP
PBSS4160DS/T1
TRANSISTOR 1000 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, TSOP-6, BIP General Purpose Small Signal
NXP
PBSS4160DS/T2
TRANSISTOR 1000 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, TSOP-6, BIP General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明