PBSS5120T,215 [NXP]
PBSS5120T - 20 V; 1 A PNP low VCEsat (BISS) transistor TO-236 3-Pin;
| 型号： | PBSS5120T,215 |
| 厂家： | 
NXP |
| 描述： | PBSS5120T - 20 V; 1 A PNP low VCEsat (BISS) transistor TO-236 3-Pin PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5120T
20 V, 1 A
PNP low VCEsat (BISS) transistor
Product data sheet
2003 Sep 29
NXP Semiconductors
Product data sheet
20 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS5120T
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency leading to less heat generation
• Reduced printed-circuit board requirements
SYMBOL
VCEO
IC
PARAMETER
MAX. UNIT
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
−20
−1
V
A
ICM
−2
A
• Cost effective alternative for MOSFETs in specific
applications.
RCEsat
250
mΩ
PINNING
APPLICATIONS
PIN
1
DESCRIPTION
• Power management
– DC/DC conversion
– Supply line switching
– Battery charger
base
2
emitter
collector
3
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
handbook, halfpage
3
– Inductive load drivers (e.g. relays, buzzers and
motors).
3
2
1
DESCRIPTION
PNP BISS transistor in a SOT23 plastic package providing
ultra low VCEsat and RCEsat parameters.
NPN complement: PBSS4120T.
1
2
Top view
MAM256
MARKING
TYPE NUMBER
PBSS5120T
MARKING CODE(1)
Fig.1 Simplified outline (SOT23) and symbol.
*3K
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
PBSS5120T
−
2003 Sep 29
2
NXP Semiconductors
Product data sheet
20 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS5120T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
V
V
V
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
−20
−5
open collector
−1
ICM
−2
IBM
−200
300
480
+150
150
+150
mA
mW
mW
°C
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Tamb ≤ 25 °C; note 2
Tstg
Tj
storage temperature
−65
−
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
417
UNIT
K/W
K/W
Rth j-a
thermal resistance from junction to ambient in free air; note 1
in free air; note 2
260
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2003 Sep 29
3
NXP Semiconductors
Product data sheet
20 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS5120T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = −20 V; IE = 0
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
−
−
−100
−50
−100
−
nA
μA
nA
VCB = −20 V; IE = 0; Tj = 150 °C
VEB = −4 V; IC = 0
−
−
IEBO
hFE
emitter-base cut-off current
DC current gain
−
−
VCE = −2 V; IC = −100 mA
VCE = −2 V; IC = −500 mA
VCE = −2 V; IC = −1 A
300
250
200
−
450
350
290
−
−
−
VCEsat
collector-emitter saturation
voltage
IC = −100 mA; IB = −1 mA
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −50 mA
−100
−125
−250
250
−0.75
−
mV
mV
mV
mΩ
V
−
−
−
−
RCEsat
VBEon
fT
equivalent on-resistance
base-emitter turn-on voltage
transition frequency
IC = −500 mA; IB = −50 mA; note 1
VCE = −2 V; IC = −100 mA
−
−
−
−
IC = −100 mA; VCE = −10 V;
100
−
MHz
f = 100 MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
−
28
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Sep 29
4
NXP Semiconductors
Product data sheet
20 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS5120T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Sep 29
5
NXP Semiconductors
Product data sheet
20 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS5120T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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specifications and product descriptions, at any time and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Sep 29
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/01/pp7
Date of release: 2003 Sep 29
Document order number: 9397 750 11899
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