PBSS5260PAP [NXP]
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor; 60 V ，2 A PNP / PNP低VCEsat晶体管（ BISS ）晶体管
| 型号： | PBSS5260PAP |
| 厂家： | 
NXP |
| 描述： | 60 V, 2 A PNP/PNP low VCEsat (BISS) transistor |
| 文件： | 总17页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
12 December 2012
Product data sheet
1. General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4260PANP. NPN/NPN complement: PBSS4260PAN.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High efficiency due to less heat generation
AEC-Q101 qualified
•
•
•
•
•
•
3. Applications
Load switch
•
•
•
•
•
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VCEO
collector-emitter
voltage
open base
-
-
-60
V
IC
collector current
-
-
-
-
-2
-3
A
A
ICM
peak collector current single pulse; tp ≤ 1 ms
Per transistor
RCEsat
collector-emitter
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
250
mΩ
saturation resistance
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NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
C1 B2
1
2
3
4
5
6
7
8
E1
B1
C2
E2
B2
C1
C1
C2
emitter TR1
base TR1
E2
6
5
4
TR2
7
8
collector TR2
emitter TR2
base TR2
TR1
E1
B1 C2
sym138
1
2
3
Transparent top view
collector TR1
collector TR1
collector TR2
DFN2020-6 (SOT1118)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS5260PAP
DFN2020-6
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals; body 2 x 2 x 0.65 mm
SOT1118
7. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS5260PAP
2P
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per transistor
VCBO
Parameter
Conditions
Min
Max
Unit
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
open emitter
open base
-
-
-
-
-
-
-60
-60
-7
V
V
V
A
A
A
VCEO
VEBO
open collector
IC
-2
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
-3
IB
-0.3
PBSS5260PAP
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© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
2 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
Symbol
IBM
Parameter
Conditions
Min
Max
-1
Unit
A
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
-
-
-
-
-
-
-
-
Ptot
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
370
570
530
700
450
760
700
mW
mW
mW
mW
mW
mW
mW
1450 mW
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
-
510
780
730
960
620
mW
mW
mW
mW
mW
-
-
-
-
-
1040 mW
960 mW
2000 mW
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
150
150
150
°C
°C
°C
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.
[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.
Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
[4]
[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.
[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.
[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.
Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
[8]
PBSS5260PAP
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© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
3 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
006aad165
1.5
(1)
P
tot
(W)
1.0
(2)
(3) (4)
(5)
(6)
(7)
(8)
0.5
0
-75
-25
25
75
125
175
(°C)
T
amb
(1) 4-layer PCB 70 µm, mounting pad for collector 1 cm2
(2) FR4 PCB 70 µm, mounting pad for collector 1 cm2
(3) 4-layer PCB 70 µm, standard footprint
(4) 4-layer PCB 35 µm, mounting pad for collector 1 cm2
(5) FR4 PCB 35 µm, mounting pad for collector 1 cm2
(6) 4-layer PCB 35 µm, standard footprint
(7) FR4 PCB 70 µm, standard footprint
(8) FR4 PCB 35 µm, standard footprint
Fig. 1. Per transistor: power derating curves
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
338
219
236
179
278
164
179
86
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
30
PBSS5260PAP
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© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
4 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
Symbol
Per device
Rth(j-a)
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
245
160
171
130
202
120
130
63
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.
[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.
Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
[4]
[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.
[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.
[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.
Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
[8]
006aad166
3
10
Z
duty cycle = 1
th(j-a)
(K/W)
0.75
0.5
2
0.33
10
0.2
0.1
0.05
10
0.02
0.01
0
1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB 35 µm, standard footprint
Fig. 2. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS5260PAP
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© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
5 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
006aad167
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB 35 µm, mounting pad for collector 1 cm2
Fig. 3. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aad168
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
0.5
10
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
4-layer PCB 35 µm, standard footprint
Fig. 4. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS5260PAP
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© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
6 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
006aad169
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.2
0.1
0.05
10
0.02
0
0.01
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
4-layer PCB 35 µm, mounting pad for collector 1 cm2
Fig. 5. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aac610
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
2
10
0.2
0.1
0.05
10
0.02
0.01
0
1
10
- 5
- 4
- 3
10
- 2
- 1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB 70 µm, standard footprint
Fig. 6. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS5260PAP
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© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
7 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
006aac611
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
0.75
0.5
10
0.33
0.2
0.1
10
0.05
0.02
0.01
0
1
10
- 5
- 4
- 3
10
- 2
- 1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB 70 µm, mounting pad for collector 1 cm2
Fig. 7. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aad170
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.2
0.1
0.05
10
0.02
0
0.01
-4
1
-5
10
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
4-layer PCB 70 µm, standard footprint
Fig. 8. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS5260PAP
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© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
8 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
006aad171
2
10
duty cycle = 1
0.75
0.5
Z
th(j-a)
(K/W)
0.33
0.1
0.2
10
0.05
0.02
0.01
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
4-layer PCB 70 µm, mounting pad for collector 1 cm2
Fig. 9. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
ICBO
collector-base cut-off
current
VCB = -48 V; IE = 0 A; Tamb = 25 °C
VCB = -48 V; IE = 0 A; Tj = 150 °C
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
-100
-50
nA
µA
nA
IEBO
emitter-base cut-off
current
-100
hFE
DC current gain
VCE = -2 V; IC = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
170
140
110
50
-
250
200
155
75
-
VCE = -2 V; IC = -500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
VCE = -2 V; IC = -1 A; pulsed;
-
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = -2 V; IC = -2 A; pulsed;
-
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCEsat
collector-emitter
IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-100
-220
-365
-140
-310
-500
mV
mV
mV
saturation voltage
IC = -1 A; IB = -50 mA; pulsed;
-
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -2 A; IB = -200 mA; pulsed;
-
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
PBSS5260PAP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
9 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RCEsat
collector-emitter
IC = -1 A; IB = -100 mA; pulsed;
-
-
250
mΩ
saturation resistance
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEsat
base-emitter saturation IC = -500 mA; IB = -50 mA;
-
-
-
-
-
-
-
-
-1
V
V
V
V
voltage
Tamb = 25 °C
IC = -1 A; IB = -50 mA; pulsed;
-1
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -2 A; IB = -200 mA; pulsed;
-1.2
-0.9
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = -2 V; IC = -0.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
td
tr
delay time
VCC = -12.5 V; IC = -1 A; IBon = -50 mA;
IBoff = 50 mA; Tamb = 25 °C
-
10
-
-
-
-
-
-
-
ns
rise time
-
80
ns
ton
ts
turn-on time
storage time
fall time
-
90
ns
-
195
75
ns
tf
-
ns
toff
fT
turn-off time
transition frequency
-
270
100
ns
VCE = -10 V; IC = -50 mA; f = 100 MHz;
Tamb = 25 °C
50
MHz
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
16
21
pF
aaa-000338
aaa-000506
500
-3
I
= -50 mA
B
h
FE
(1)
(2)
-45
-40
-35
I
C
-30
-20
(A)
400
-25
-2
-1
0
300
200
100
0
-15
-5
-10
(3)
-1
-10
2
3
4
-1
-10
-10
-10
-10
(mA)
0
-1
-2
-3
-4
-5
I
C
V
(V)
CE
VCE = −2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 11. Collector current as a function of collector-
emitter voltage; typical values
Fig. 10. DC current gain as a function of collector
current; typical values
PBSS5260PAP
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© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
10 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
aaa-000513
aaa-000529
-1.2
-1.2
V
BEsat
(V)
V
BE
(V)
-1.0
-0.8
-0.6
-0.4
-0.2
(1)
(2)
(3)
-0.8
(1)
(2)
(3)
-0.4
0.0
-1
-10
2
3
4
-1
-10
2
3
4
-1
-10
-10
-10
-10
(mA)
-1
-10
-10
-10
-10
I (mA)
C
I
C
VCE = −2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 12. Base-emitter voltage as a function of collector Fig. 13. Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
aaa-000812
aaa-000813
-10
-10
V
CEsat
(V)
V
CEsat
(V)
-1
-1
-1
-10
(1)
(2)
-1
-10
(1)
(2)
(3)
-2
-10
(3)
-2
-3
-10
-10
-1
2
3
4
-1
2
3
4
-10
-1
-10
-10
-10
-10
(mA)
-10
-1
-10
-10
-10
-10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 14. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 15. Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS5260PAP
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© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
11 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
aaa-000814
aaa-000815
3
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
2
10
10
10
10
(1)
(2)
(1)
(2)
(3)
1
1
(3)
-1
-1
10
10
-1
2
3
4
-1
2
3
4
-10
-1
-10
-10
-10
-10
(mA)
-10
-1
-10
-10
-10
-10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB= 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 16. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 17. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS5260PAP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
12 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
11. Test information
-
I
B
input pulse
90 %
(idealized waveform)
-
I
(100 %)
Bon
10 %
-
I
Boff
output pulse
-
(idealized waveform)
I
C
90 %
-
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig. 18. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
oscilloscope
450 Ω
oscilloscope
R2
V
DUT
I
R1
mgd624
Fig. 19. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PBSS5260PAP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
13 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
12. Package outline
2.1
1.9
0.65
max
1.1
0.9
0.04
max
0.77
0.57
(2×)
3
4
6
0.65
(4×)
2.1
1.9
0.54
0.44
(2×)
0.35
0.25
(6×)
1
0.3
0.2
Dimensions in mm
10-05-31
Fig. 20. Package outline DFN2020-6 (SOT1118)
13. Soldering
2.1
0.65
0.65
0.49
0.49
0.3 0.4
(6×) (6×)
solder lands
0.875
0.875
solder paste
1.05 1.15
2.25
(2×) (2×)
solder resist
occupied area
Dimensions in mm
0.35
(6×)
0.72
(2×)
0.45
(6×)
0.82
(2×)
sot1118_fr
Fig. 21. Reflow soldering footprint for DFN2020-6 (SOT1118)
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBSS5260PAP v.1
20121212
Product data sheet
-
-
PBSS5260PAP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
14 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
15.2 Definitions
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
15.3 Disclaimers
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PBSS5260PAP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
15 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PBSS5260PAP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
16 / 17
NXP Semiconductors
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
16. Contents
1
2
3
4
5
6
7
8
9
10
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................9
11
Test information ...................................................13
11.1
Quality information .........................................
12
13
14
Package outline ................................................... 14
Soldering .............................................................. 14
Revision history ...................................................14
15
Legal information .................................................15
Data sheet status ............................................... 15
Definitions ...........................................................15
Disclaimers .........................................................15
Trademarks ........................................................ 16
15.1
15.2
15.3
15.4
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 December 2012
PBSS5260PAP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
12 December 2012
17 / 17
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