PBSS5320T,215 [NXP]
PBSS5320T - 20 V, 3 A PNP low VCEsat (BISS) transistor TO-236 3-Pin;
| 型号： | PBSS5320T,215 |
| 厂家： | 
NXP |
| 描述： | PBSS5320T - 20 V, 3 A PNP low VCEsat (BISS) transistor TO-236 3-Pin PC 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5320T
20 V, 3 A
PNP low VCEsat (BISS) transistor
Product data sheet
2004 Jan 15
Supersedes data of 2002 Aug 08
NXP Semiconductors
Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat
SYMBOL
VCEO
IC
PARAMETER
MAX. UNIT
collector-emitter voltage
collector current (DC)
−20
−2
V
A
A
• High collector current capability
• High collector current gain
ICRP
repetitive peak collector
current
−3
• Improved efficiency due to reduced heat generation.
RCEsat
equivalent on-resistance
105
mΩ
APPLICATIONS
PINNING
PIN
• Power management applications
• Low and medium power DC/DC convertors
• Supply line switching
DESCRIPTION
1
2
3
base
• Battery chargers
emitter
collector
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4320T.
handbook, halfpage
3
3
2
MARKING
1
TYPE NUMBER
PBSS5320T
MARKING CODE(1)
1
2
ZH∗
Top view
MAM256
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
PBSS5320T
−
SOT23
2004 Jan 15
2
NXP Semiconductors
Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
−
−
−
V
V
V
A
A
A
A
collector-emitter voltage
emitter-base voltage
open base
−20
−5
open collector
collector current (DC)
repetitive peak collector current
peak collector current
base current (DC)
−2
ICRP
ICM
note 1
−3
single peak
−5
IB
−0.5
300
480
540
1.2
Ptot
total power dissipation
Tamb ≤ 25 °C; note 2
Tamb ≤ 25 °C; note 3
Tamb ≤ 25 °C; note 4
Tamb ≤ 25 °C; notes 1 and 2
mW
mW
mW
W
Tstg
Tj
storage temperature
−65
−
+150
150
+150
°C
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Notes
1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tin plated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air; note 1
VALUE
417
UNIT
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from junction to
ambient
in free air; note 2
260
in free air; note 3
230
in free air; notes 1 and 4
104
Notes
1. Device mounted on a printed-circuit board; single sided copper; tin plated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 6 cm2.
4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2004 Jan 15
3
NXP Semiconductors
Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector-base cut-off current VCB = −20 V; IE = 0
VCB = −20 V; IE = 0; Tj = 150 °C
VEB = −5 V; IC = 0
CONDITIONS
MIN.
TYP.
MAX.
UNIT
nA
ICBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−100
−50
−100
−
μA
IEBO
hFE
emitter-base cut-off current
DC current gain
nA
VCE = −2 V; IC = −100 mA
220
220
200
150
100
−
VCE = −2 V; IC = −500 mA
−
VCE = −2 V; IC = −1 A; note 1
VCE = −2 V; IC = −2 A; note 1
VCE = −2 V; IC = −3 A; note 1
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −50 mA
−
−
−
VCEsat
collector-emitter saturation
voltage
−70
−130
−230
−210
−300
105
−1.1
−1.2
−
mV
mV
mV
mV
mV
mΩ
V
−
IC = −2 A; IB = −100 mA; note 1
IC = −2 A; IB = −200 mA; note 1
IC = −3 A; IB = −300 mA; note 1
IC = −2 A; IB = −200 mA; note 1
IC = −2 A; IB = −100 mA; note 1
IC = −3 A; IB = −300 mA; note 1
−
−
−
RCEsat
VBEsat
equivalent on-resistance
−
75
−
base-emitter saturation
voltage
−
−
−
V
VBE(on)
fT
base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1
−1.2
100
−
V
transition frequency
IC = −100 mA; VCE = −5 V;
−
−
MHz
f = 100 MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
−
50
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Jan 15
4
NXP Semiconductors
Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
MLD876
MLD877
−1200
1000
handbook, halfpage
handbook, halfpage
h
FE
V
BE
(mV)
800
(1)
(1)
(2)
−800
600
(2)
400
(3)
−400
(3)
200
0
−10
0
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
(mA)
I
I
C
C
VCE = −2 V.
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MLD878
MLD879
−1400
−1400
handbook, halfpage
handbook, halfpage
V
V
BEsat
BEsat
(mV)
(mV)
−1000
−1000
(1)
(1)
(2)
(2)
(3)
−600
−600
(3)
−200
−200
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 10.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) amb = 25 °C.
(3) Tamb = 150 °C.
(1) Tamb = −55 °C.
(2) amb = 25 °C.
(3) Tamb = 150 °C.
T
T
Fig.4 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 15
5
NXP Semiconductors
Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
MLD880
MLD881
3
3
−10
−10
handbook, halfpage
handbook, halfpage
V
V
CEsat
CEsat
(mV)
(mV)
2
2
−10
−10
(1)
(3)
(1)
(2)
(2)
−10
−1
(3)
−10
−1
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 10.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD882
MLD883
3
3
−10
−10
handbook, halfpage
handbook, halfpage
V
V
CEsat
CEsat
(mV)
(mV)
2
−10
(1)
(3)
(2)
2
−10
−10
−1
(1)
(3) (2)
−10
−10
−1
2
3
4
−1
2
3
I
4
−10
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
(mA)
I
C
C
IC/IB = 50.
(1) Tamb = 150 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 100.
(1) Tamb = 150 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
T
T
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 15
6
NXP Semiconductors
Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
MLD884
2
10
handbook, halfpage
R
CEsat
(Ω)
10
1
(1)
−1
10
(2)
(3)
−2
10
−1
2
3
I
4
−10
−1
−10
−10
−10
−10
(mA)
C
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
2004 Jan 15
7
NXP Semiconductors
Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
2004 Jan 15
8
NXP Semiconductors
Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 15
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp10
Date of release: 2004 Jan 15
Document order number: 9397 750 12441
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