PBYR10100 [NXP]

Rectifier diodes Schottky barrier; 整流二极管肖特基势垒


型号：	PBYR10100
厂家：	NXP
描述：	Rectifier diodes Schottky barrier 整流二极管肖特基势垒整流二极管局域网
文件：	总5页 (文件大小：42K)
中文：	中文翻译
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Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR10100 series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

V_R= 60 V/ 80 V/ 100 V

I_F(AV)= 10 A

V_F≤ 0.7 V

GENERAL DESCRIPTION

PINNING

SOD59 (TO220AC)

Schottky rectifier diodes in a plastic

envelope. Intended for use as

output rectifiers in low voltage, high

frequency switched mode power

supplies.

DESCRIPTION

cathode

anode

cathode

tab

The PBYR10100 series is supplied

in the conventional leaded SOD59

(TO220AC) package.

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

PBYR10

100

V_RRM

V_RWM

Peak repetitive reverse

voltage

Working peak reverse

voltage

Continuous reverse voltage

V_R

T_mb≤ 139 ˚C

I_F(AV)

Average rectified forward

current

square wave; δ = 0.5; T_mb≤ 133 ˚C

I_FRM

I_FSM

Repetitive peak forward

current

square wave; δ = 0.5; T_mb≤ 133 ˚C

Non-repetitive peak forward t = 10 ms

current

135

150

t = 8.3 ms

sinusoidal; T_j= 125 ˚C prior to

surge; with reapplied V_RRM(max)

pulse width and repetition rate

limited by T_{j max}

I_RRM

T_j

Peak repetitive reverse

surge current

Operating junction

temperature

150

175

˚C

T_stg

Storage temperature

- 65

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction

to mounting base

Thermal resistance junction in free air

to ambient

K/W

March 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR10100 series

ELECTRICAL CHARACTERISTICS

T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_F

Forward voltage

I_F= 10 A; T_j= 125˚C

I_F= 20 A; T_j= 125˚C

I_F= 20 A

0.61

0.7

0.74 0.85

0.88 0.95

I_R

Reverse current

V_R= V_RWM

420

150

µA

V_R= V_RWM; T_j= 125˚C

V_R= 5 V; f = 1 MHz, T_j= 25˚C to 125˚C

C_d

Junction capacitance

March 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR10100 series

PBYR10100

Tmb / C

D = 1.0

PF / W

Vo = 0.550 V

IR / mA

150 C

PBYR10100

120

100

Rs = 0.015 Ohms

130

125 C

100 C

0.5

0.2

0.1

140

150

t^p

D =

75 C

t_p

0.1

Tj = 50 C

0.01

100

VR/ V

IF(AV) / A

Fig.1. Maximum forward dissipation P_F= f(I_F(AV));

square current waveform where I_F(AV)=I_F(RMS)x √D.

Fig.4. Typical reverse leakage current; I_R= f(V_R);

parameter T_j

Cd/ pF

Tmb / C

a = 1.57

PBYR10100

PBYR20100CT

PF / W

Vo = 0.550 V

Rs = 0.015 Ohms

10000

1000

100

130

134

138

142

146

150

1.9

2.2

2.8

VR/ V

100

IF(AV) / A

Fig.2. Maximum forward dissipation P_F= f(I_F(AV));

sinusoidal current waveform where a = form

Fig.5. Typical junction capacitance; C_d= f(V_R);

f = 1 MHz; T_j= 25˚C to 125 ˚C.

factor = I_F(RMS)/ I_F(AV)

Transient thermal impedance, Zth j-mb (K/W)

IF / A

PBYR10100

Tj = 25 C

Tj = 125 C

Typ

Max

0.1

0.01

D =

0.001

1us

10us 100us 1ms

10ms 100ms

10s

0.5

1.5

pulse width, tp (s)

PBYR10100

VF / V

Fig.3. Typical and maximum forward characteristic

I_F= f(V_F); parameter T_j

Fig.6. Transient thermal impedance; Z_{th j-mb}= f(t_p).

March 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR10100 series

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

max

(2x)

0,9 max (2x)

0,6

2,4

5,08

Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base.

Notes

1. Refer to mounting instructions for TO220 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

March 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR10100 series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

March 1998

Rev 1.200

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