PBYR1020CTD/T3 [NXP]
5A, 20V, SILICON, RECTIFIER DIODE;型号: | PBYR1020CTD/T3 |
厂家: | NXP |
描述: | 5A, 20V, SILICON, RECTIFIER DIODE 二极管 |
文件: | 总5页 (文件大小:38K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1025CTD series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
VR = 20 V/ 25 V
IO(AV) = 10 A
VF ≤ 0.4 V
a1
1
a2
3
k
2
GENERAL DESCRIPTION
PINNING
SOT428
Dual schottky rectifier diodes
intended for use as output rectifiers
in low voltage, high frequency
switched mode power supplies.
PIN
DESCRIPTION
anode 1
cathode1
tab
1
2
The PBYR1025CTD series is
supplied in the SOT428 surface
mounting package.
3
anode 2
cathode
2
tab
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
PBYR10
20CTD
25CTD
VRRM
VRWM
Peak repetitive reverse
-
-
20
25
V
V
voltage
Working peak reverse
voltage
Continuous reverse voltage
20
20
25
25
VR
T
mb ≤ 107 ˚C
-
-
V
A
IO(AV)
Average rectified output
current (both diodes
conducting)
square wave; δ = 0.5; Tmb ≤ 136 ˚C
10
10
IFRM
IFSM
Repetitive peak forward
current per diode
square wave; δ = 0.5; Tmb ≤ 136 ˚C
-
A
Non-repetitive peak forward t = 10 ms
-
-
90
100
A
A
current per diode
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
IRRM
Tj
Peak repetitive reverse
surge current per diode
Operating junction
temperature
-
-
1
A
150
175
˚C
˚C
Tstg
Storage temperature
- 65
1 it is not possible to make connection to pin 2 of the SOT428 package
February 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1025CTD series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction per diode
-
-
-
-
-
50
3
2.5
-
K/W
K/W
K/W
to mounting base
both diodes
Thermal resistance junction pcb mounted, minimum footprint, FR4
to ambient
board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 5 A; Tj = 125˚C
IF = 10 A; Tj = 125˚C
IF = 10 A
-
-
-
-
-
-
0.33
0.4
V
V
0.44 0.55
0.5
0.2
10
0.62
5
20
-
V
IR
Reverse current
VR = VRWM
mA
mA
pF
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
Cd
Junction capacitance
350
February 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1025CTD series
Tmb(max) / C
D = 1.0
Forward dissipation, PF (W)
4
0.5
Reverse current, IR (A)
138
141
144
147
150
100mA
10mA
Vo = 0.25 V
Rs = 0.03 Ohms
3
125 C
0.2
0.1
100 C
75 C
2
1
0
1mA
100uA
10uA
p
t
50 C
t
p
I
D =
T
Tj = 25 C
t
T
0
1
2
3
4
5
6
7
8
0
25
50
Average forward current, IF(AV) (A)
Reverse voltage, VR (V)
Fig.1. Maximum forward dissipation per diode
PF = f(IF(AV)); square current waveform where
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
IF(AV) =IF(RMS) x √D.
Tmb(max) / C
a = 1.57
Forward dissipation, PF (W)
Junction capacitance, Cd (pF)
1000
3
2.5
2
136.5
Vo = 0.25 V
Rs = 0.03 Ohms
1.9
138.75
2.2
2.8
4
141
143.25
1.5
1
145.5
147.75
150
0.5
0
100
0
1
2
3
4
5
1
10
100
Average forward current, IF(AV) (A)
Reverse voltage, VR (V)
Fig.2. Maximum forward dissipation per diode
PF = f(IF(AV)); sinusoidal current waveform where
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
a = form factor = IF(RMS) / IF(AV)
.
Transient thermal impedance, Zth j-mb (K/W)
10
Forward current, IF (A)
10
8
Tj = 25 C
Tj = 125 C
1
typ
max
6
0.1
4
p
t
t
p
P
0.01
D
D =
T
2
t
T
0.001
0
1us
10us 100us 1ms
10ms 100ms
1s
10s
0
0.2
0.4
0.6
0.8
1
pulse width, tp (s)
Forward voltage, VR (V)
Fig.3. Typical and maximum forward characteristic
per diode IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance per diode;
Zth j-mb = f(tp).
February 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1025CTD series
MECHANICAL DATA
Dimensions in mm : Net Mass: 1.4 g
seating plane
1.1
2.38 max
0.93 max
5.4
6.73 max
tab
4 min
4.6
6.22 max
0.5 min
10.4 max
0.5
2
0.3
0.5
3
1
0.8 max
(x2)
2.285 (x2)
Fig.7. SOT428 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
2.5
1.5
4.57
Fig.8. SOT428 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
February 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1025CTD series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1998
5
Rev 1.000
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