PBYR1025D [NXP]
Rectifier diodes Schottky barrier; 整流二极管肖特基势垒型号: | PBYR1025D |
厂家: | NXP |
描述: | Rectifier diodes Schottky barrier |
文件: | 总5页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1025D series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
VR = 20 V/ 25 V
IF(AV) = 10 A
k
tab
a
3
VF ≤ 0.41 V
GENERAL DESCRIPTION
PINNING
SOT428
Schottky rectifier diodes in
a
PIN
DESCRIPTION
no connection
cathode1
anode
tab
surface mounting plastic envelope.
Intended for use as output rectifiers
in low voltage, high frequency
switched mode power supplies.
1
2
3
The PBYR1025D series is supplied
in the SOT428 surface mounting
package.
2
tab cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
PBYR10
20D
25D
VRRM
VRWM
Peak repetitive reverse
-
-
20
25
V
V
voltage
Working peak reverse
voltage
Continuous reverse voltage
20
20
25
25
VR
T
mb ≤ 120 ˚C
-
-
V
A
IF(AV)
Average rectified forward
current
square wave; δ = 0.5; Tmb ≤ 140 ˚C
square wave; δ = 0.5; Tmb ≤ 140 ˚C
10
20
IFRM
IFSM
Repetitive peak forward
current
-
A
Non-repetitive peak forward t = 10 ms
-
-
100
110
A
A
current
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
IRRM
Tj
Peak repetitive reverse
surge current
-
-
1
A
Operating junction
temperature
150
175
˚C
˚C
Tstg
Storage temperature
- 65
1 It is not possible to make connection to pin 2 of the SOT428 package.
April 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1025D series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
-
-
-
2
-
K/W
K/W
Thermal resistance junction pcb mounted, minimum footprint, FR4
50
to ambient
board
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 10 A; Tj = 125˚C
IF = 20 A; Tj = 125˚C
IF = 20 A
-
-
-
-
-
-
0.33 0.41
0.43 0.55
V
V
0.51
1
0.6
5
V
IR
Reverse current
VR = VRWM
mA
mA
pF
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
22
40
-
Cd
Junction capacitance
700
April 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1025D series
Forward dissipation, PF (W)
0.5
IR / A
Tmb(max) / C
D = 1.0
1A
100mA
10mA
1mA
15
120
130
140
150
Vo = 0.32 V
Rs = 0.009 Ohms
Tj = 150 C
125
100
10
0.2
0.1
75
5
0
p
t
t
p
I
50
25
D =
T
100uA
10uA
t
T
0
5
10
15
20
25
0
5
10
15
20
25
Average forward current, IF(AV) (A)
VR / V
Fig.1. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Fig.4. Typical reverse leakage current; IR = f(VR);
parameter Tj
Forward dissipation, PF (W)
Tmb(max) / C
Cd / pF
10000
1000
100
12
10
8
126
130
134
138
142
146
150
Vo = 0.32 V
Rs = 0.009 Ohms
a = 1.57
1.9
2.2
2.8
4
6
4
2
0
0
5
10
15
1
10
100
Average forward current, IF(AV) (A)
VR / V
Fig.2. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Fig.5. Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
Transient thermal impedance, Zth j-mb (K/W)
10
IF / A
30
25
20
15
10
5
typ
max
Tj = 25 C
Tj = 125 C
1
0.1
p
t
T
t
p
P
0.01
D
D =
t
T
0.001
0
1us
10us 100us 1ms
10ms 100ms
1s
10s
0
0.2
0.4
0.6
0.8
1
pulse width, tp (s)
VF / V
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
April 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1025D series
MECHANICAL DATA
Dimensions in mm : Net Mass: 1.4 g
seating plane
1.1
2.38 max
0.93 max
5.4
6.73 max
tab
4 min
4.6
6.22 max
0.5 min
10.4 max
0.5
2
0.3
0.5
3
1
0.8 max
(x2)
2.285 (x2)
Fig.7. SOT428 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
2.5
1.5
4.57
Fig.8. SOT428 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
April 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1025D series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1998
5
Rev 1.000
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