PBYR1035 [NXP]

Rectifier diodes Schottky barrier; 整流二极管肖特基势垒
PBYR1035
型号: PBYR1035
厂家: NXP    NXP
描述:

Rectifier diodes Schottky barrier
整流二极管肖特基势垒

整流二极管
文件: 总5页 (文件大小:41K)
中文:  中文翻译
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Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR1045B series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
VR = 40 V/ 45 V  
IF(AV) = 10 A  
k
tab  
a
3
VF 0.57 V  
GENERAL DESCRIPTION  
PINNING  
SOT404  
Schottky rectifier diodes in a plastic  
envelope. Intended for use as  
output rectifiers in low voltage, high  
frequency switched mode power  
supplies.  
PIN  
DESCRIPTION  
no connection  
cathode1  
mb  
1
2
The PBYR1045B series is supplied  
in the surface mounting SOT404  
package.  
3
anode  
2
tab  
cathode  
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
PBYR10  
40B  
45B  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
40  
40  
40  
45  
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
45  
45  
VR  
T
mb 113 ˚C  
-
-
V
A
IF(AV)  
Average rectified forward  
current  
square wave; δ = 0.5; Tmb 136 ˚C  
square wave; δ = 0.5; Tmb 136 ˚C  
10  
20  
IFRM  
IFSM  
Repetitive peak forward  
current  
-
A
Non-repetitive peak forward t = 10 ms  
-
-
135  
150  
A
A
current  
t = 8.3 ms  
sinusoidal; Tj = 125 ˚C prior to  
surge; with reapplied VRRM(max)  
pulse width and repetition rate  
limited by Tj max  
IRRM  
Tj  
Peak repetitive reverse  
surge current  
-
-
1
A
Operating junction  
temperature  
150  
175  
˚C  
˚C  
Tstg  
Storage temperature  
- 65  
1 It is not possible to make connection to pin 2 of the SOT404 package.  
July 1998  
1
Rev 1.200  
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR1045B series  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction  
to mounting base  
-
-
-
2
-
K/W  
K/W  
Thermal resistance junction pcb mounted, minimum footprint, FR4  
50  
to ambient  
board  
ELECTRICAL CHARACTERISTICS  
Tj = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VF  
Forward voltage  
IF = 10 A; Tj = 125˚C  
IF = 20 A; Tj = 125˚C  
IF = 20 A  
-
-
-
-
-
-
0.5  
0.57  
V
V
0.69 0.72  
0.65 0.84  
V
IR  
Reverse current  
VR = VRWM  
0.2  
22  
350  
1.3  
35  
-
mA  
mA  
pF  
VR = VRWM; Tj = 100˚C  
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C  
Cd  
Junction capacitance  
July 1998  
2
Rev 1.200  
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR1045B series  
Tmb(max) (C)  
D = 1.0  
0.5  
Forward dissipation, PF (W)  
10  
Reverse current, IR (mA)  
130  
100  
10  
Vo = 0.42 V  
Rs = 0.015 Ohms  
125 C  
100 C  
75 C  
8
6
134  
138  
0.2  
0.1  
1
142  
4
2
0
50 C  
p
t
t
p
I
D =  
T
0.1  
146  
150  
t
T
Tj = 25 C  
0.01  
0
5
10  
15  
0
25  
Reverse voltage, VR (V)  
50  
Average forward current, IF(AV) (A)  
Fig.1. Maximum forward dissipation PF = f(IF(AV));  
square current waveform where IF(AV) =IF(RMS) x D.  
Fig.4. Typical reverse leakage current; IR = f(VR);  
parameter Tj  
2.2  
Tmb(max) (C)  
a = 1.57  
Forward dissipation, PF (W)  
Vo = 0.42 V  
Rs = 0.015 Ohms  
Cd / pF  
8
7
6
5
4
3
2
1
0
134  
136  
138  
140  
142  
144  
146  
148  
150  
1000  
100  
10  
1.9  
2.8  
4
1
10  
100  
0
2
4
6
8
10  
Average forward current, IF(AV) (A)  
VR / V  
Fig.2. Maximum forward dissipation PF = f(IF(AV));  
sinusoidal current waveform where a = form  
Fig.5. Typical junction capacitance; Cd = f(VR);  
f = 1 MHz; Tj = 25˚C to 125 ˚C.  
factor = IF(RMS) / IF(AV)  
.
Transient thermal impedance, Zth j-mb (K/W)  
10  
Forward current, IF (A)  
50  
40  
30  
20  
10  
0
Tj = 25 C  
Tj = 125 C  
1
typ  
max  
0.1  
tp  
T
tp  
P
D =  
D
t
T
0.01  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1us  
10us 100us 1ms  
10ms 100ms  
1s  
10s  
Forward voltage, VF (V)  
pulse width, tp (s)  
Fig.3. Typical and maximum forward characteristic  
IF = f(VF); parameter Tj  
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).  
July 1998  
3
Rev 1.200  
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR1045B series  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 1.4 g  
4.5 max  
1.4 max  
10.3 max  
11 max  
15.4  
2.5  
0.85 max  
(x2)  
0.5  
2.54 (x2)  
Fig.7. SOT404 : centre pin connected to mounting base.  
MOUNTING INSTRUCTIONS  
Dimensions in mm  
11.5  
9.0  
17.5  
2.0  
3.8  
5.08  
Fig.8. SOT404 : soldering pattern for surface mounting.  
Notes  
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent  
damage to MOS gate oxide.  
2. Epoxy meets UL94 V0 at 1/8".  
July 1998  
4
Rev 1.200  
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR1045B series  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1998  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
July 1998  
5
Rev 1.200  

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