PBYR1640B [NXP]
Rectifier diodes Schottky barrier; 整流二极管肖特基势垒
| 型号： | PBYR1640B |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes Schottky barrier |
| 文件： | 总5页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645B series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
VR = 40 V/ 45 V
IF(AV) = 16 A
k
tab
a
3
VF ≤ 0.57 V
GENERAL DESCRIPTION
PINNING
SOT404
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
PIN
DESCRIPTION
no connection
cathode1
tab
1
2
The PBYR1645B series is supplied
in the surface mounting SOT404
package.
3
anode
2
tab
cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
PBYR16
40B
45B
VRRM
VRWM
Peak repetitive reverse
-
-
40
45
V
V
voltage
Working peak reverse
voltage
Continuous reverse voltage
40
40
45
45
VR
T
mb ≤ 116 ˚C
-
-
V
A
IF(AV)
Average rectified forward
current
square wave; δ = 0.5; Tmb ≤ 131 ˚C
square wave; δ = 0.5; Tmb ≤ 131 ˚C
16
32
IFRM
IFSM
Repetitive peak forward
current
-
A
Non-repetitive peak forward t = 10 ms
-
-
135
150
A
A
current
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
IRRM
Tj
Peak repetitive reverse
surge current
-
-
1
A
Operating junction
temperature
150
175
˚C
˚C
Tstg
Storage temperature
- 65
1 it is not possible to make connection to pin 2 of the SOT404 package.
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645B series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
-
-
-
1.5
-
K/W
K/W
Thermal resistance junction pcb mounted, minimum footprint, FR4
50
to ambient
board
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
IR
Forward voltage
Reverse current
IF = 16 A; Tj = 125˚C
IF = 16 A
-
-
-
-
-
0.53 0.57
0.55 0.63
V
V
mA
mA
pF
VR = VRWM
0.2
27
1.7
40
-
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
Cd
Junction capacitance
470
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645B series
Tmb(max) (C)
Forward dissipation, PF (W)
15
Reverse current, IR (mA)
125 C
127.5
100
10
Vo = 0.37 V
Rs = 0.013 Ohms
D = 1.0
0.5
0.2
100 C
75 C
10
5
135
0.1
1
p
t
50 C
p
t
142.5
150
I
D =
T
0.1
Tj = 25 C
t
T
0.01
0
0
5
10
15
20
25
0
25
Reverse voltage, VR (V)
50
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Fig.4. Typical reverse leakage current; IR = f(VR);
parameter Tj
Tmb(max) (C)
Forward dissipation, PF (W)
Cd / pF
15
10
5
127.5
10000
1000
100
Vo = 0.37 V
Rs = 0.013 Ohms
a = 1.57
1.9
2.2
2.8
135
4
142.5
150
0
1
10
100
0
5
10
15
Average forward current, IF(AV) (A)
VR / V
Fig.2. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
Fig.5. Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
factor = IF(RMS) / IF(AV)
.
Transient thermal impedance, Zth j-mb (K/W)
10
Forward current, IF (A)
50
40
30
20
10
0
Tj = 25 C
Tj = 125 C
1
typ
0.1
max
t
T
p
t
p
P
D =
D
t
T
0.01
1us
10us 100us 1ms
10ms 100ms
1s
10s
0
0.2
0.4
0.6
0.8
1
1.2
1.4
pulse width, tp (s)
Forward voltage, VF (V)
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645B series
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
4.5 max
1.4 max
10.3 max
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.7. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.8. SOT404 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645B series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
5
Rev 1.200
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