PBYR20100 [NXP]
Rectifier diodes Schottky barrier; 整流二极管肖特基势垒
| 型号： | PBYR20100 |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes Schottky barrier |
| 文件： | 总6页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR20100CT, PBYR20100CTB series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
VR = 60 V/ 80 V/ 100 V
a1
1
a2
3
IO(AV) = 20 A
k
2
VF ≤ 0.7 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR20100CT series is supplied in the SOT78 conventional leaded package.
The PBYR20100CTB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
anode 1 (a)
cathode (k) 1
tab
tab
1
2
2
3
anode 2 (a)
cathode (k)
1
3
1 2 3
tab
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR20
PBYR20
60CT 80CT 100CT
60CTB 80CTB 100CTB
VRRM
VRWM
Peak repetitive reverse
-
-
60
60
60
80
100
100
100
V
V
voltage
Working peak reverse
voltage
Continuous reverse voltage
80
VR
T
mb ≤ 139 ˚C
-
-
80
20
V
A
IO(AV)
Average rectified output
current (both diodes
conducting)
square wave; δ = 0.5;
Tmb ≤ 133 ˚C
IFRM
IFSM
Repetitive peak forward
current per diode
square wave; δ = 0.5;
-
20
A
Tmb ≤ 133 ˚C
Non-repetitive peak forward t = 10 ms
-
-
135
150
A
A
current per diode
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
IRRM
Tj
Peak repetitive reverse
surge current per diode
Operating junction
temperature
-
-
1
A
150
175
˚C
˚C
Tstg
Storage temperature
- 65
1. It is not possible to make connection to pin 2 of the SOT404 package.
November 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR20100CT, PBYR20100CTB series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction per diode
-
-
-
-
-
2
1
-
K/W
K/W
K/W
K/W
to mounting base
both diodes
-
Thermal resistance junction SOT78 package in free air
60
50
to ambient
SOT404 package, pcb mounted, minimum
footprint, FR4 board
-
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 10 A; Tj = 125˚C
IF = 20 A; Tj = 125˚C
IF = 20 A
-
-
-
-
-
-
0.61
0.7
V
V
0.74 0.85
0.88 0.95
V
IR
Reverse current
VR = VRWM
5
5
420
150
15
-
µA
mA
pF
VR = VRWM; Tj = 125˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
Cd
Junction capacitance
November 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR20100CT, PBYR20100CTB series
Tmb / C
D = 1.0
PF / W
Vo = 0.550 V
IR / mA
150 C
120
15
100
10
1
Rs = 0.015 Ohms
130
10
125 C
100 C
0.5
0.2
0.1
5
140
150
tp
D =
T
75 C
tp
I
0.1
Tj = 50 C
t
T
0.01
0
0
50
100
15
5
0
10
VR/ V
IF(AV) / A
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
IF(AV) =IF(RMS) x √D.
Cd/ pF
Tmb / C
a = 1.57
PF / W
Vo = 0.550 V
Rs = 0.015 Ohms
10000
1000
100
130
134
138
142
146
150
10
8
1.9
2.2
2.8
6
4
4
2
0
10
0
2
4
6
8
10
1
10
VR/ V
100
IF(AV) / A
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
factor = IF(RMS) / IF(AV)
.
Transient thermal impedance, Zth j-mb (K/W)
10
IF / A
50
40
30
20
10
0
Tj = 25 C
Tj = 125 C
1
Typ
Max
0.1
p
t
p
t
P
0.01
D
D =
T
t
T
0.001
1us
10us 100us 1ms
10ms 100ms
1s
10s
0
1
2
0.5
1.5
pulse width, tp (s)
VF / V
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance per diode;
Zth j-mb = f(tp).
November 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR20100CT, PBYR20100CTB series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.7. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
November 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR20100CT, PBYR20100CTB series
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
4.5 max
1.4 max
10.3 max
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.8. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.9. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
November 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR20100CT, PBYR20100CTB series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1998
6
Rev 1.300
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