PBYR2150CT [NXP]
Schottky barrier double diode; 肖特基势垒二极管双
| 型号： | PBYR2150CT |
| 厂家： | 
NXP |
| 描述： | Schottky barrier double diode |
| 文件： | 总5页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
page
M3D087
PBYR2150CT
Schottky barrier double diode
1996 Oct 14
Preliminary specification
Philips Semiconductors
Preliminary specification
Schottky barrier double diode
PBYR2150CT
FEATURES
DESCRIPTION
• Low switching losses
• Low forward voltage
• High breakdown voltage
• Fast recovery time
The PBYR2150CT is a Schottky barrier double diode, fabricated in planar
technology, and encapsulated in a SOT223 plastic SMD package.
• Guard ring protected
• Plastic SMD package.
4
4
APPLICATIONS
• Low power, switched-mode
1
3
power supplies
• Rectification
2
• Polarity protection.
1
2
3
PINNING
MAM086
Top view
PIN
DESCRIPTION
anode (a1)
1
2
3
4
Marking code: BYR215.
common cathode
anode (a2)
Fig.1 Simplified outline (SOT223), pin configuration and symbol.
common cathode
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
repetitive peak reverse voltage
crest working reverse voltage
average forward current
150
V
V
V
A
−
−
−
−
VRRM
VRWM
IF(AV)
150
150
1
Tamb = 85 °C; Rth j-a = 70 K/W;
note 1; VR(equiv) = 0.2 V; note 2
IFSM
non-repetitive peak forward current t = 8.3 ms half sinewave;
JEDEC method
10
A
−
1996 Oct 14
2
Philips Semiconductors
Preliminary specification
Schottky barrier double diode
PBYR2150CT
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
Tstg
storage temperature
+150
°C
°C
°C
−65
Tj
junction temperature
+150
80
−65
Tamb
operating ambient temperature
−
Notes
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.2
IF = 0.1 A; note 1
400
mV
IF = 0.5 A; note 1
650
850
690
1
mV
mV
mV
mA
mA
IF = 1 A; note 1
IF = 1 A; Tj = 100 °C; note 1
VR = VRRMmax; note 1; see Fig.3
IR
reverse current
VR = VRRMmax; Tj = 100 °C; note 1;
10
see Fig.3
Cd
diode capacitance
VR = 4 V; f = 1 MHz; see Fig.4
100
pF
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
VALUE
70
UNIT
K/W
Rth j-a
note 1
Note
1. Refer to SOT223 standard mounting conditions.
1996 Oct 14
3
Philips Semiconductors
Preliminary specification
Schottky barrier double diode
PBYR2150CT
GRAPHICAL DATA
MGD767
MGD766
−2
10
10
handbook, halfpage
handbook, halfpage
I
F
I
R
(A)
(A)
1
(4)
(3)
−3
10
−1
10
(4)
(3)
(2)
(1)
−2
10
(2)
(1)
−4
10
−3
10
−4
10
−5
10
−5
10
−6
−6
10
10
0
50
100
150
0
0.2
0.4
0.6
0.8
V
(V)
V
(V)
R
F
(1) Tamb = 25 °C.
(1) Tamb = 25 °C.
(2)
Tamb = 60 °C.
(2) Tamb = 60 °C.
(3) Tamb = 80 °C.
(4) Tamb = 100 °C.
(3) Tamb = 80 °C.
(4) Tamb = 100 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
MGD768
250
handbook, halfpage
C
d
(pF)
200
150
100
50
0
0
50
100
V
(V)
R
f = 1 MHz.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1996 Oct 14
4
Philips Semiconductors
Preliminary specification
Schottky barrier double diode
PBYR2150CT
PACKAGE OUTLINE
0.95
0.85
0.1 S
S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
M
0.2
A
4
A
0.10
0.01
3.7
3.3
7.3
6.7
o
o
16
16
max
1
2
3
o
10
max
0.80
0.60
1.80
max
M
2.3
0.1
B
(4x)
MSA035 - 1
4.6
Dimensions in mm.
Fig.5 SOT223.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 14
5
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