PBYR2545CTF [NXP]

Rectifier diodes Schottky barrier; 整流二极管肖特基势垒


型号：	PBYR2545CTF
厂家：	NXP
描述：	Rectifier diodes Schottky barrier 整流二极管肖特基势垒整流二极管
文件：	总6页 (文件大小：47K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR2545CTF, PBYR2545CTX

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Reverse surge capability

• High thermal cycling performance

• Isolated mounting tab

V_R= 40 V/ 45 V

I_O(AV)= 20 A

V_F≤ 0.65V

GENERAL DESCRIPTION

Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended

for use as output rectifiers in low voltage, high frequency switched mode power supplies.

The PBYR2545CTF is supplied in the SOT186 package.

The PBYR2545CTX is supplied in the SOT186A package.

PINNING

SOT186

SOT186A

DESCRIPTION

anode 1 (a)

cathode (k)

case

anode 2 (a)

isolated

2 3

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

PBYR25

40CTF

40CTX

45CTF

45CTX

V_RRM

V_RWM

Peak repetitive reverse

voltage

Working peak reverse

voltage

Continuous reverse voltage

V_R

_hs≤ 86 ˚C

I_O(AV)

Average rectified output

current (both diodes

conducting)

square wave; δ = 0.5;

T_hs≤ 98 ˚C

I_FRM

I_FSM

Repetitive peak forward

current per diode

square wave; δ = 0.5;

T_hs≤ 98 ˚C

Non-repetitive peak forward t = 10 ms

135

150

current per diode

t = 8.3 ms

sinusoidal; T_j= 125 ˚C prior to

surge; with reapplied V_RRM(max)

pulse width and repetition rate

limited by T_{j max}

I_RRM

T_j

Peak repetitive reverse

surge current per diode

Operating junction

temperature

150

175

˚C

T_stg

Storage temperature

- 65

October 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR2545CTF, PBYR2545CTX

ISOLATION LIMITING VALUE & CHARACTERISTIC

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_isol

C_isol

Peak isolation voltage from

SOT186 package; R.H. ≤ 65%; clean and

1500

2500

all terminals to external

heatsink

dustfree

R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;

all terminals to external

heatsink

sinusoidal waveform; R.H. ≤ 65%; clean

and dustfree

Capacitance from pin 2 to

external heatsink

f = 1 MHz

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-hs}

Thermal resistance junction per diode

4.8

K/W

to heatsink

both diodes

(with heatsink compound)

Thermal resistance junction in free air

to ambient

R_{th j-a}

K/W

ELECTRICAL CHARACTERISTICS

T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_F

I_R

Forward voltage per diode

I_F= 20 A; T_j= 125˚C

I_F= 20 A

0.58 0.65

0.63 0.68

Reverse current per diode

V_R= V_RWM

0.3

V_R= V_RWM; T_j= 100˚C

V_R= 5 V; f = 1 MHz, T_j= 25˚C to 125˚C

C_d

Junction capacitance per

diode

530

October 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR2545CTF, PBYR2545CTX

Forward dissipation, PF (W) PBYR2545CTX Ths(max) (C)

PBYR3045WT

Reverse current, IR (mA)

100

Vo = 0.37 V

D = 1.0

Rs = 0.014 Ohms

0.5

125 C

0.2

100 C

75 C

102

126

0.1

50 C

D =

0.1

Tj = 25 C

150

0.01

Average forward current, IF(AV) (A)

Reverse voltage, VR (V)

Fig.1. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; square current waveform where

Fig.4. Typical reverse leakage current per diode;

I_R= f(V_R); parameter T_j

I_F(AV)=I_F(RMS)x √D.

Forward dissipation, PF (W)

Ths(max) (C)

a = 1.57

PBYR2545CTX

Cd / pF

PBYR2545CT

10000

1000

100

Vo = 0.37 V

Rs = 0.014 Ohms

1.9

2.2

2.8

102

126

150

100

Average forward current, IF(AV) (A)

VR / V

Fig.2. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; sinusoidal current waveform where a = form

Fig.5. Typical junction capacitance per diode;

C_d= f(V_R); f = 1 MHz; T_j= 25˚C to 125 ˚C.

factor = I_F(RMS)/ I_F(AV)

Transient thermal impedance, Zth j-hs (K/W)

PBYR2545CTX

Forward current, IF (A)

Tj = 25 C

Tj = 125 C

typ

0.1

max

D =

0.01

1us

10us 100us 1ms

10ms 100ms

10s

0.2

0.4

0.6

0.8

1.2

1.4

pulse width, tp (s)

PBYR2545CTX

Forward voltage, VF (V)

Fig.3. Typical and maximum forward characteristic

I_F= f(V_F); parameter T_j

Fig.6. Transient thermal impedance per diode;

Z_{th j-hs}= f(t_p).

October 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR2545CTF, PBYR2545CTX

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

10.2

max

5.7

max

4.4

max

0.9

3.2

3.0

0.5

2.9 max

4.4

4.0

7.9

7.5

max

seating

plane

3.5 max

not tinned

4.4

13.5

min

0.9

0.7

0.4

0.55 max

1.3

2.54

5.08

top view

Fig.7. SOT186; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

October 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR2545CTF, PBYR2545CTX

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

10.3

max

4.6

max

3.2

3.0

2.9 max

2.8

Recesses (2x)

6.4

2.5

0.8 max. depth

15.8

max

seating

plane

15.8

max.

3 max.

not tinned

2.5

13.5

min.

0.4

1.0 (2x)

0.6

2.5

0.9

0.7

2.54

0.5

5.08

1.3

Fig.8. SOT186A; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

October 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR2545CTF, PBYR2545CTX

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

October 1998

Rev 1.300

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