PBYR2545CT [NXP]

Rectifier diodes Schottky barrier; 整流二极管肖特基势垒


型号：	PBYR2545CT
厂家：	NXP
描述：	Rectifier diodes Schottky barrier 整流二极管肖特基势垒整流二极管
文件：	总6页 (文件大小：46K)
中文：	中文翻译
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Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR2545CT, PBYR2545CTB series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

V_R= 40 V/ 45 V

I_O(AV)= 30 A

V_F≤ 0.62 V

GENERAL DESCRIPTION

Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting

plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.

The PBYR2545CT series is supplied in the SOT78 conventional leaded package.

The PBYR2545CTB series is supplied in the SOT404 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

DESCRIPTION

anode 1 (a)

cathode (k) ¹

tab

anode 2 (a)

cathode (k)

1 2 3

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

PBYR25

40CT

45CT

45CTB

40CTB

V_RRM

V_RWM

Peak repetitive reverse

voltage

Working peak reverse

voltage

Continuous reverse voltage

V_R

_mb≤ 113 ˚C

I_O(AV)

Average rectified forward

current (both diodes

conducting)²

square wave; δ = 0.5;

T_mb≤ 126 ˚C

I_FRM

I_FSM

Repetitive peak forward

current per diode

square wave; δ = 0.5;

T_mb≤ 126 ˚C

Non-repetitive peak forward t = 10 ms

180

200

current per diode

t = 8.3 ms

sinusoidal; T_j= 125 ˚C prior to

surge; with reapplied V_RRM(max)

pulse width and repetition rate

limited by T_{j max}

I_RRM

T_j

Peak repetitive reverse

surge current per diode

Operating junction

temperature

150

175

˚C

T_stg

Storage temperature

- 65

1. It is not possible to make connection to pin 2 of the SOT404 package.

2. SOT78 package. For output currents greater than 20A the cathode connection should be made to the metal

mounting tab.

October 1998

Rev 1.400

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR2545CT, PBYR2545CTB series

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction per diode

1.5

K/W

to mounting base

both diodes

Thermal resistance junction SOT78 package in free air

to ambient

SOT404 package, pcb mounted, minimum

footprint, FR4 board

ELECTRICAL CHARACTERISTICS

T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_F

Forward voltage per diode

I_F= 20 A; T_j= 125˚C

I_F= 30 A; T_j= 125˚C

I_F= 30 A

0.58 0.62

0.72 0.76

0.72 0.82

I_R

Reverse current per diode

V_R= V_RWM

0.3

V_R= V_RWM; T_j= 100˚C

V_R= 5 V; f = 1 MHz, T_j= 25˚C to 125˚C

C_d

Junction capacitance per

diode

530

October 1998

Rev 1.400

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR2545CT, PBYR2545CTB series

PBYR3045WT

PBYR2545CT

0.5

Tmb(max) (C)

D = 1.0

Forward dissipation (W)

Reverse current, IR (mA)

127.5

100

Vo = 0.34 V

Rs = 0.014 Ohms

125 C

0.2

100 C

135

0.1

75 C

50 C

142.5

150

D =

0.1

Tj = 25 C

0.01

Average Rectified Forward Current (A)

Reverse voltage, VR (V)

Fig.1. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; square current waveform where

Fig.4. Typical reverse leakage current per diode;

I_R= f(V_R); parameter T_j

I_F(AV)=I_F(RMS)x √D.

PBYR2545CT

Tmb(max) (C)

a = 1.57

Forward dissipation (W)

Cd / pF

PBYR2545CT

132

135

138

141

144

147

150

10000

1000

100

Vo = 0.34 V

Rs = 0.014 Ohms

1.9

2.2

2.8

100

Average forward current, IF(AV) (A)

VR / V

Fig.2. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; sinusoidal current waveform where a = form

Fig.5. Typical junction capacitance per diode;

C_d= f(V_R); f = 1 MHz; T_j= 25˚C to 125 ˚C.

factor = I_F(RMS)/ I_F(AV)

Transient thermal impedance, Zth j-mb (K/W)

PBYR2545CT

Forward current, IF (A)

Tj = 25 C

Tj = 125 C

typ

0.1

max

D =

0.01

1us

10us 100us 1ms

10ms 100ms

10s

0.2

0.4

0.6

0.8

1.2

1.4

pulse width, tp (s)

PBYR2545CT

Forward voltage, VF (V)

Fig.3. Typical and maximum forward characteristic

I_F= f(V_F); parameter T_j

Fig.6. Transient thermal impedance per diode;

Z_{th j-mb}= f(t_p).

October 1998

Rev 1.400

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR2545CT, PBYR2545CTB series

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

1 2 3

max

(2x)

0,9 max (3x)

0,6

2,4

2,54 2,54

Fig.7. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT78 (TO220) envelopes.

2. Epoxy meets UL94 V0 at 1/8".

October 1998

Rev 1.400

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR2545CT, PBYR2545CTB series

MECHANICAL DATA

Dimensions in mm

Net Mass: 1.4 g

4.5 max

1.4 max

10.3 max

11 max

15.4

2.5

0.85 max

(x2)

0.5

2.54 (x2)

Fig.8. SOT404 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS

Dimensions in mm

11.5

9.0

17.5

2.0

3.8

5.08

Fig.9. SOT404 : soldering pattern for surface mounting.

Notes

1. Epoxy meets UL94 V0 at 1/8".

October 1998

Rev 1.400

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR2545CT, PBYR2545CTB series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

October 1998

Rev 1.400

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