PBYR30-45PT [NXP]

30A, 45V, SILICON, RECTIFIER DIODE;


型号：	PBYR30-45PT
厂家：	NXP
描述：	30A, 45V, SILICON, RECTIFIER DIODE 局域网二极管
文件：	总5页 (文件大小：32K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Rectifier diodes

schottky barrier

PBYR3045PT series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Dual, low leakage, platinum barrier,

schottky rectifier diodes in a plastic

envelope featuring low forward

voltage drop and absence of stored

charge. These devices can withstand

reverse voltage transients and have

guaranteed reverse surge capability.

The devices are intended for use in

switched mode power supplies and

high frequency circuits in general

where low conduction and zero

switching losses are important.

SYMBOL

PARAMETER

MAX. MAX. MAX. UNIT

PBYR30- 35PT 40PT

45PT

V_RRM

Repetitive peak reverse

voltage

Forward voltage

Output current (both

diodes conducting)

V_F

I_O(AV)

0.60

PINNING - SOT93

PIN CONFIGURATION

SYMBOL

DESCRIPTION

Anode 1 (a)

tab

Cathode (k)

Anode 2 (a)

tab Cathode (k)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN.

MAX.

UNIT

-35

-40

-45

V_RRM

V_RWM

V_R

Repetitive peak reverse voltage

Crest working reverse voltage

Continuous reverse voltage

T_mb≤ 136 ˚C

I_O(AV)

Output current (both diodes

square wave; δ = 0.5;

conducting)¹

_mb≤ 130 ˚C

I_O(RMS)

I_FRM

RMS forward current

Repetitive peak forward current t = 25 µs; δ = 0.5;

per diode

T_mb≤ 130 ˚C

I_FSM

Non-repetitive peak forward

current per diode

t = 10 ms

180

200

t = 8.3 ms

sinusoidal T_j= 125 ˚C prior

to surge; with reapplied

V_RWM(max)

I²t

I²t for fusing

t = 10 ms

162

A²s

I_RRM

Repetitive peak reverse current t_p= 2 µs; δ = 0.001

per diode.

I_RSM

Non-repetitive peak reverse

current per diode.

t_p= 100 µs

T_stg

T_j

Storage temperature

-65

175

150

˚C

Operating junction temperature

1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base.

August 1996

Rev 1.100

Philips Semiconductors

Product specification

Rectifier diodes

schottky barrier

PBYR3045PT series

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

Thermal resistance junction to per diode

1.4

1.0

K/W

mounting base

both diodes

R_{th j-a}

Thermal resistance junction to in free air.

ambient

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_F

Forward voltage (per diode)

I_F= 20 A; T_j= 125˚C

I_F= 30 A; T_j= 125˚C

I_F= 30 A

0.55

0.67

0.71

100

0.60

0.72

0.76

200

I_R

Reverse current (per diode)

V_R= V_RWM

µA

V_R= V_RWM; T_j= 125 ˚C

f = 1MHz; V_R= 5V; T_j= 25 ˚C to

125 ˚C

C_d

Junction capacitance (per

diode)

800

August 1996

Rev 1.100

Philips Semiconductors

Product specification

Rectifier diodes

schottky barrier

PBYR3045PT series

Tmb(max) / C

D = 1.0

PF / W

PBYR1645

IR / mA

150 C

PBYR1645

129

100

Vo = 0.302

Rs = 0.012

0.5

136

0.2

125 C

100 C

0.1

143

150

0.1

75 C

D =

Tj = 50 C

0.01

IF(AV) / A

VR/ V

Fig.1. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; square current waveform where

Fig.4. Typical reverse leakage current per diode;

I_R= f(V_R); parameter T_j

I_F(AV)=I_F(RMS)x √D.

PF / W

Tmb(max) / C

a = 1.57

PBYR1645

Cd / pF

PBYR1645

133.2

136

10000

1000

100

Vo = 0.302

Rs = 0.012

1.9

2.2

2.8

138.8

141.6

144.4

147.2

150

100

IF(AV) / A

VR / V

Fig.2. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; sinusoidal current waveform where a = form

Fig.5. Typical junction capacitance per diode;

C_d= f(V_R); f = 1 MHz; T_j= 25˚C to 125 ˚C.

factor = I_F(RMS)/ I_F(AV)

IF / A

Zth j-mb (K/W)

PBYR1645

Tj = 25 C

typ

max

Tj = 125 C

0.1

0.01

10us

0.2

0.4

0.6

VF / V

0.8

1.2

1.4

1ms

0.1s

10s

tp / s

Fig.3. Typical and maximum forward characteristic

I_F= f(V_F); parameter T_j

Fig.6. Transient thermal impedance per diode;

Z_{th j-mb}= f(t_p).

August 1996

Rev 1.100

Philips Semiconductors

Product specification

Rectifier diodes

schottky barrier

PBYR3045PT series

MECHANICAL DATA

Dimensions in mm

Net Mass: 5 g

15.2

max

4.6

13.6

max

4.25

4.15

2 max

4.4

max

12.7

max

2.2 max

0.5

min

13.6

min

dimensions within

this zone are

uncontrolled

0.5

0.4

5.5

1.15

0.95

1.6

Fig.7. SOT93; pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT93 envelope.

2. Epoxy meets UL94 V0 at 1/8".

August 1996

Rev 1.100

Philips Semiconductors

Product specification

Rectifier diodes

schottky barrier

PBYR3045PT series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

August 1996

Rev 1.100

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