PBYR30-60PT [NXP]
30A, 60V, SILICON, RECTIFIER DIODE;
| 型号： | PBYR30-60PT |
| 厂家： | 
NXP |
| 描述： | 30A, 60V, SILICON, RECTIFIER DIODE 局域网 二极管 |
| 文件： | 总5页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
PBYR30100PT series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Dual, low leakage, platinum barrier
schottky rectifier diodes in a plastic
envelope featuring low forward
voltage drop and absence of stored
charge. These devices can withstand
reverse voltage transients and have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
SYMBOL
PARAMETER
MAX. MAX. MAX. UNIT
PBYR30- 60PT 80PT 100PT
VRRM
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
60
80
100
V
VF
IO(AV)
0.7
30
0.7
30
0.7
30
V
A
PINNING - SOT93
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
Anode 1 (a)
tab
a1
a2
2
Cathode (k)
Anode 2 (a)
3
k
tab Cathode (k)
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN.
MAX.
UNIT
-60
60
60
60
-80
80
80
80
-100
100
100
100
VRRM
VRWM
VR
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
-
-
-
V
V
V
Tmb ≤ 139 ˚C
IO(AV)
Output current (both diodes
square wave; δ = 0.5;
-
30
A
conducting)1
T
mb ≤ 124 ˚C
IO(RMS)
IFRM
RMS forward current
-
-
43
30
A
A
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Tmb ≤ 124 ˚C
IFSM
Non-repetitive peak forward
current per diode.
t = 10 ms
-
-
180
200
A
A
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior
to surge; with reapplied
VRWM(max)
I2t
I2t for fusing
t = 10 ms
-
-
162
1
A2s
A
IRRM
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode.
IRSM
Non-repetitive peak reverse
current per diode.
tp = 100 µs
-
1
A
Tstg
Tj
Storage temperature
-65
-
175
150
˚C
˚C
Operating junction temperature
1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base.
October 1994
1
Rev 1.100
Philips Semiconductors
Product Specification
Rectifier Diode
Schottky Barrier
PBYR30100PT series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance junction to per diode
-
-
-
-
-
45
1.4
1.0
-
K/W
K/W
K/W
mounting base
both diodes
Rth j-a
Thermal resistance junction to in free air.
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage (per diode)
IF = 15 A; Tj = 125˚C
IF = 30 A; Tj = 125˚C
IF = 15 A; Tj = 25˚C
VR = VRWM; Tj = 25 ˚C
VR = VRWM; Tj = 125 ˚C
f = 1MHz; VR = 5V; Tj = 25 ˚C to
125 ˚C
-
-
-
-
-
-
0.61
0.74
0.77
5.0
0.70
0.85
0.85
150
15
V
V
V
IR
Reverse current (per diode)
µA
mA
pF
5.0
Cd
Junction capacitance (per
diode)
600
-
October 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
PBYR30100PT series
IR/ mA
PF / W
Tmb(max) / C
D = 1.0
100
10
20
15
10
5
122
129
136
143
150
Vo = 0.550 V
Rs = 0.010 Ohms
Tj/ C = 150
125
0.5
0.2
100
1
0.1
t
T
p
75
50
t
p
I
D =
0.1
0.01
t
T
0
10
26
0
20
10 20 30 40 50 60 70 80 90 100
VR/ V
IF(AV) / A
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
IF(AV) =IF(RMS) x √D.
Cd/ pF
T
PF / W
Tmb(max) / C
10000
1000
100
15
10
5
129
136
143
150
Vo = 0.550 V
Rs = 0.010 Ohms
a = 1.57
1.9
2.2
2.8
4
0
10
5
15
0
10
1
10
VR/ V
100
IF(AV) / A
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
factor = IF(RMS) / IF(AV)
.
Zth j-mb (K/W)
10
IF / A
Max
100
80
60
40
20
0
Tj = 25 C
Tj = 125 C
Typ
1
0.1
p
t
P
D
t
0.01
10us
0
1
2
0.5
1.5
1ms
0.1s
10s
tp / s
VF / V
Fig.3. Typical and maximum forward characteristic
per diode; IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance per diode;
Zth j-mb = f(tp).
October 1994
3
Rev 1.100
Philips Semiconductors
Product Specification
Rectifier Diode
Schottky Barrier
PBYR30100PT series
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
15.2
max
14
4.6
13.6
max
4.25
4.15
2 max
2
4.4
21
max
12.7
max
2.2 max
0.5
min
13.6
min
dimensions within
this zone are
uncontrolled
1
2
3
0.5
M
0.4
5.5
1.15
0.95
1.6
11
Fig.7. SOT93; pin 2 connected to mounting base.
Notes
1. Accessories supplied on request: refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
October 1994
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
PBYR30100PT series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1994
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1994
5
Rev 1.100
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