PBYR30-60WT [NXP]

DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-247, Rectifier Diode;


型号：	PBYR30-60WT
厂家：	NXP
描述：	DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-247, Rectifier Diode 局域网二极管
文件：	总5页 (文件大小：39K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR30100WT series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

V_R= 60 V/ 80 V/ 100 V

I_O(AV)= 30 A

V_F≤ 0.7 V

GENERAL DESCRIPTION

PINNING

SOT429 (TO247)

Schottky rectifier diodes in a plastic

envelope. Intended for use as

output rectifiers in low voltage, high

frequency switched mode power

supplies.

DESCRIPTION

anode 1

cathode

anode 2

The PBYR30100WT series is

supplied in the conventional leaded

SOT429 (TO247) package.

mounting cathode

base

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

60WT 80WT 100WT

UNIT

PBYR30

V_RRM

V_RWM

Peak repetitive reverse

100

voltage

Working peak reverse

voltage

Continuous reverse voltage

V_R

T_mb≤ 139 ˚C

I_O(AV)

Average rectified output

current (both diodes

conducting)

square wave; δ = 0.5;

T_mb≤ 124 ˚C

I_FRM

I_FSM

Repetitive peak forward

current per diode

square wave; δ = 0.5;

T_mb≤ 124 ˚C

Non-repetitive peak forward t = 10 ms

current per diode

180

200

t = 8.3 ms

sinusoidal; T_j= 125 ˚C prior to

surge; with reapplied V_RRM(max)

pulse width and repetition rate

limited by T_{j max}

I_RRM

T_j

Peak repetitive reverse

surge current per diode

Operating junction

temperature

150

175

˚C

T_stg

Storage temperature

- 65

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction per diode

1.4

K/W

to mounting base

both diodes

Thermal resistance junction in free air

to ambient

November 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR30100WT series

ELECTRICAL CHARACTERISTICS

characteristics are per diode at T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_F

Forward voltage

I_F= 15 A; T_j= 125˚C

I_F= 30 A; T_j= 125˚C

I_F= 15 A

0.61

0.7

0.74 0.85

0.77 0.85

I_R

Reverse current

V_R= V_RWM

600

150

µA

V_R= V_RWM; T_j= 125˚C

V_R= 5 V; f = 1 MHz, T_j= 25˚C to 125˚C

C_d

Junction capacitance

November 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR30100WT series

IR/ mA

PBYR30100PT

PF / W

Tmb(max) / C

D = 1.0

100

122

129

136

143

150

Vo = 0.550 V

Rs = 0.010 Ohms

Tj/ C = 150

125

0.5

0.2

100

0.1

D =

0.1

0.01

10 20 30 40 50 60 70 80 90 100

VR/ V

IF(AV) / A

Fig.1. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; square current waveform where

Fig.4. Typical reverse leakage current per diode;

I_R= f(V_R); parameter T_j

I_F(AV)=I_F(RMS)x √D.

Cd/ pF

PBYR30100PT

PBYR30100

PF / W

Tmb(max) / C

10000

1000

100

129

136

Vo = 0.550 V

Rs = 0.010 Ohms

a = 1.57

1.9

2.2

2.8

143

150

VR/ V

100

IF(AV) / A

Fig.2. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; sinusoidal current waveform where a = form

Fig.5. Typical junction capacitance per diode;

C_d= f(V_R); f = 1 MHz; T_j= 25˚C to 125 ˚C.

factor = I_F(RMS)/ I_F(AV)

Transient thermal impedance, Zth j-mb (K/W)

IF / A

PBYR30100PT

Max

100

Tj = 25 C

Tj = 125 C

Typ

0.1

0.01

D =

0.001

1us

10us 100us 1ms

10ms 100ms

10s

0.5

1.5

pulse width, tp (s)

PBYR30100WT

VF / V

Fig.3. Typical and maximum forward characteristic

per diode; I_F= f(V_F); parameter T_j

Fig.6. Transient thermal impedance per diode;

Z_{th j-mb}= f(t_p).

November 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR30100WT series

MECHANICAL DATA

Dimensions in mm

Net Mass: 5 g

5.3 max

16 max

1.8

3.5

max

5.3

7.3

3.5

max

seating

plane

15.5

max

2.5

4.0

max

15.5

min

0.9 max

2.2 max

3.2 max

1.1

0.4 M

5.45 5.45

Fig.7. SOT429 (TO247); pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT429 envelope.

2. Epoxy meets UL94 V0 at 1/8".

November 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR30100WT series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

November 1998

Rev 1.300

相关型号：