PCF5078_技术文档

INTEGRATED CIRCUITS

DATA SHEET

PCF5078

Power amplifier controller for GSM

and PCN systems

1999 Apr 12

Product speciﬁcation

File under Integrated Circuits, IC17

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

FEATURES

APPLICATIONS

• Global System for Mobile communication (GSM)

• Compatible with baseband interface family PCF5073x

• Two power sensor inputs

• Personal Communications Network (PCN) systems.

• Temperature compensation of sensor signal

• Active filter for DAC input

GENERAL DESCRIPTION

• Power Amplifier (PA) protection against mismatching

• Bias current source for detector diodes

This CMOS device integrates an amplifier for the detected

RF voltage from the sensor, an integrator and an active

filter to build a PA control loop for cellular systems with a

small amount of passive components.

• Generation of pre-bias level for PA at start of burst

(home position)

• Possibility to adapt home position by external

components

• Applicable for a wide range of silicon and GaAs power

amplifiers.

QUICK REFERENCE DATA

SYMBOL

V_DD

I_DD(tot)

T_amb

PARAMETER

MIN.

2.4

TYP.

3.6

MAX.

5.0

UNIT

supply voltage

V

total supply current

−

6

mA

operating ambient temperature

−40

+85

°C

ORDERING INFORMATION

TYPE

PACKAGE

NUMBER

NAME

DESCRIPTION

VERSION

PCF5078T

TSSOP8 plastic thin shrink small outline package; 8 leads; body width 3.0 mm

SOT505-1

1999 Apr 12

2

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

BLOCK DIAGRAM

handbook, full pagewidth

antenna

sensor

RF

PA

D1

D2

VINT

2

VS2

4

VS1

VC

1

3

S1

C4

S2

R2

10 pF

C1

1 kΩ

S5

R1

20 kΩ

6 pF

C2

OP1

V

DD

OP4

S3

PCF5078

6 pF

10 µA

S4

R6

V

prebias

R4

6 kΩ

15 kΩ

30 µA

V

DD

V

DD

10 µA

R3

V

home

S1 S2 S3 S4 S5

50 kΩ

C3

VDAC

CONTROL

LOGIC

5 pF

V

DD

5

6

7

8

MGS193

VDAC

V

DD

SS

VHOME

AUXDAC3

PCF5073x

Fig.1 Block diagram.

3

1999 Apr 12

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

An external Digital-to-Analog Converter (DAC) with10-bit

resolution is necessary to control the loop e.g. the

AUXDAC3 of the baseband interface family PCF5073x.

PINNING

SYMBOL

VC

DESCRIPTION

1

2

3

4

5

6

7

8

PA control output voltage

negative integrator input

sensor signal input 1

sensor signal input 2

ground supply

An integrated active filter smooths the voltage steps of the

DAC and avoids a feedthrough of the DAC harmonics into

the modulation spectra of the PA.

VINT

VS1

VS2

The DAC signal and the sensor signal are added by

operational amplifier OP1. The voltage difference of both

signals is integrated by operational amplifier OP4, which

provides the PA control voltage on pin VC. The integration

is performed by means of an external capacitance C_VINT

connected between pins VINT and VC.

V_SS

VDAC

VHOME

V_DD

DAC input voltage

home position input voltage

supply voltage

The shape of the rising and falling power burst edges can

be determined by means of the DAC voltage (see Fig.3).

Power-down mode

handbook, halfpage

V

VC

VINT

VS1

1

2

3

4

8

7

6

5

DD

During the not used time slots in Time Division Multiple

Access (TDMA) systems, the PCF5078 must be turned off

VHOME

VDAC

by switching off the supply voltage on pin V_DD

.

PCF5078

V

Initial conditions and start-up

VS2

SS

MGS194

The PCF5078 has been designed to operate in bursts as

required in TDMA systems. For each time slot to be

transmitted it must be powered-up by switching on the

supply voltage. This allows a proper initialization of

switches S1 to S5.

Fig.2 Pin configuration.

During start-up switches S1, S2 and S3 are closed and

switches S4 and S5 are opened (see Fig.4).

FUNCTIONAL DESCRIPTION

General

The forward voltages on the Schottky diodes are sampled

on capacitors C1 and C2, respectively, because switch S1

is closed. Moreover, the control voltage on pin VC is

initially forced to pre-bias level V_prebiasbecause

The PCF5078 integrates an amplifier for the detected RF

voltage from the sensor, an integrator and an active filter

to build a PA control loop with a small amount of passive

components.

switches S2 and S3 are closed and switch S4 is opened.

Switch S1 is opened after a fixed time the supply voltage

has been switched on and then the circuit is ready. This

time is defined on-chip and can be maximum 45 µs. Once

switch S1 is open, a ramp signal with a minimum

amplitude of 25 mV applied on pin VDAC determines

opening of switch S3 and closing of switch S4 with a delay

of maximum 3 µs with respect to the start of the ramp.

The sensor amplifier is able to amplify signals from a RF

power detector in a range of −20 to +15 dBm. This

complies to the PA output power range of GSM and PCN

systems when a directional coupler with 20 dB attenuation

is used.

The Schottky diode for power detection (sensor) is biased

by an integrated current source of 30 µA. Variations of the

forward voltage of the diodes with the temperature have no

influence on the measured signal, because they are

cancelled by sampling around the switched capacitor

operational amplifier OP1 (see Fig.1).

After opening switch S3, the control voltage on pin VC

rises in a fixed amount of time to the home position level

so biasing the PA to the beginning of the active range of its

control curve. Switch S2 remains closed during this typical

time of 2 µs. When switch S2 is opened, switch S5 is

closed allowing the transfer of any signal coming from

amplifier OP1.

1999 Apr 12

4

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

After this preset, the control voltage is free to increase

according to the control loop if RF input is present

(see Fig.3).

PA protection against mismatching

A second sensor amplified input is integrated into the

PCF5078 for measuring the reflected wave of the

directional coupler. The signal is added to the measured

RF power signal (see Fig.3). When mismatching at the

output of the PA occurs the power is reduced. A high

Voltage Standing Wave Ratio (VSWR) at the output of the

PA often occurs in systems where the PA is connected to

the antenna via switches with low attenuation instead of

using a duplex filter.

For higher DAC ramp steps the delay time of opening

switch S3 (and closing switch S4) is reduced. On the

contrary, the delay time between opening switch S2 with

respect to opening switch S3 (and closing switch S4)

remains unchanged.

For a correct start-up it is required that the rising time of the

supply voltage is maximum 20 µs.

Home position voltage

End of a burst

A forward voltage of an on-chip silicon diode is provided as

the default home position voltage V_home. This voltage

matches the requirements at the control input of most PAs

and exhibits the same temperature coefficient.

For a proper down ramp, the final value of the DAC input

voltage should be below the value at the beginning of the

burst and so be able to really shut-off the PA (see Fig.5).

This means the code programmed for the last bit of the

DAC down ramp (CODE_END) has to be lower than the

initial value of the up ramp (CODE_START). Moreover, the

last code must be maintained until the supply voltage has

been switched off.

However, if another value is needed for a certain PA the

level can be adjusted by connecting external components

to pin VHOME (see Figs 10 and 11). The home position

voltage can be set between 200 and 1000 mV when using

a capacitor of 50 pF connected between pins VINT

and VC.

When the voltage on pin VC is detected to be lower than

V_VHOMEa built-in mechanism forces the voltage on pin VC

to V_prebiasby closing switches S1, S2 and S3 and by

opening switches S4 and S5.

For proper operation, the supply voltage should be

switched off at least 15 µs later with respect to the end of

the down ramp on pin VDAC.

1999 Apr 12

5

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

handbook, full pagewidth

0

−10

−20

−30

−40

−50

−60

−70

−80

RF

out

(dBc)

−28

−18

−10

0

+543

+553 +561

+571

time (µs)

V

VDAC

<0.9V

DD

CODE

START

END

0

2

4

6

8

10 12 14 16

16 18 20 22 24 26 28 30 32

DAC bits at 560 kHz

V

VC

<0.9V

DD

V

prebias

0

2

4

6

8

10 12 14 16

16 18 20 22 24 26 28 30 32

DAC bits at 560 kHz

V

DD

time

RF

in

>45 µs

>15 µs

MGS197

Fig.3 Timing diagram.

1999 Apr 12

6

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

handbook, full pagewidth

V

DD

time

<20 µs

>25 µs

V

VDAC

CODE

START

>25 mV

0

2

4

6 . . .

DAC bits at 560 kHz

<3 µs

<45 µs

closed

S1

opened

time

closed

S3

opened

closed

S4

opened

closed

S2

opened

closed

S5

opened

2 µs

V

VC

V

VHOME

V

prebias

time

MGS195

Fig.4 Initialization and start of a burst diagram.

7

1999 Apr 12

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

handbook, full pagewidth

V

DD

time

V

VDAC

CODE

< CODE

END

START

closed

. . . 26

28

30

32

DAC bits at 560 kHz

≥15 µs

S1, S2, S3

opened

time

closed

S4, S5

opened

<12 µs

V

VC

V

VHOME

V

prebias

time

MGS196

Fig.5 End of a burst diagram.

8

1999 Apr 12

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

V_DD

PARAMETER

MIN.

MAX.

UNIT

supply voltage

DC voltage on

pins VS2 and VS2

all other pins

2.4

6.0

V

V_n

−3.0

−0.5

−10

−

+6.0

+10

V

I_n

DC current on any signal pin

total power dissipation

mA

mW

°C

P_tot

T_stg

T_amb

315

storage temperature

−65

−40

+150

+85

operating ambient temperature

CHARACTERISTICS

_DD= 2.4 to 5 V; T_amb= −40 to +85 °C; see Fig.1; unless otherwise speciﬁed.

V

SYMBOL PARAMETER CONDITIONS

MIN.

TYP.

MAX.

UNIT

Supply

V_DD

supply voltage

total supply current

2.4

3.6

5.0

V

I_DD(tot)

−

6

mA

Sensor input voltage

V_I(n)

input voltage on pins VS1 and VS2

−3

−

V_DD

V

Bias current source

I_bias

detector diode bias current

no input signal;

T_amb= 25 °C; see Fig.7

V

_DD= 2.4 V

_DD= 5.0 V

17

21

−

28

39

45

−

µA

V

33

µA

TC_bias

temperature coefﬁcient of bias current

source

0.07

µA/K

Home position voltage

V_home

internal home position voltage

T_amb= 25 °C

0.550

0.600

0.650

V

TC_home

temperature coefﬁcient of internal home

position voltage source

−

−2.1

−

mV/K

R3

resistor for internal home position

voltage

−

50

−

kΩ

V_I(VHOME)home position input voltage

200

−

1000⁽¹⁾mV

Low pass ﬁlter for DAC signal (3rd-order Bessel)

f_3dB

corner frequency

70

100

130

kHz

1999 Apr 12

9

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Integrator (OP4)

B_G

gain bandwidth

C_L= 120 pF; note 2

−

4

−

MHz

dB

PSRR

power supply rejection ratio

at 217 Hz; V_DD= 3 V;

note 2

50

55

SR_pos

SR_neg

V_O(min)

V_O(max)

positive slew rate

V_DD= 3 V; note 3

3.5

4.5

−

V/µs

V

negative slew rate

V_DD= 3 V; note 3

3.5

minimum output voltage

maximum output voltage

T_amb= 25 °C; see Fig.8

R_L= 700 Ω; see Fig.6

−

0.2

0.85V_DD

−

V

Capacitors C1, C2, C3 and C4

M

matching ratio accuracy between

capacitances

−

1

−

%

Notes

1. For C_VINT= 50 pF.

2. Guaranteed by design.

3. Slew rates are measured between 10% and 90% of output voltage level with an load of approximately 40 pF to

ground.

MGS200

MGS198

6.5

33

handbook, halfpage

I

L

I

bias

(mA)

(µA)

5.5

31

4.5

3.5

29

27

2

2.5

2

3

4

5

3

4

5

V

(V)

V

(V)

DD

T_amb= 25 °C.

Fig.6 Minimum load current as a function of the

supply voltage.

Fig.7 Typical bias current as a function of the

supply voltage.

1999 Apr 12

10

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

MGS199

1.0

handbook, halfpage

TC

(mV/K)

0.8

0.6

0.4

0.2

2

3

4

5

V

(V)

DD

Fig.8 Temperature coefficient of the minimum

output voltage as a function of the supply

voltage.

APPLICATION INFORMATION

antenna

handbook, full pagewidth

sensor

RF

PA

V

VC

VINT

VS1

DD

1

2

3

4

8

7

6

5

D1

D2

2.2 to 10 nF

C2

C3

R2

1 kΩ

R1

1 kΩ

C1

<50 pF

VHOME

VDAC

22 to 82 pF

0.2 to 2.5 V

PCF5078

V

VS2

SS

AUXDAC3

PCF5073x

MGS201

Fig.9 Application diagram for mobile station with PA protection against mismatching.

11

1999 Apr 12

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

V

andbook, halfpage

DD

andbook, halfpage

(2)

R

V

home

V

VHOME

R3

VHOME

7

VOLTAGE

GENERATION

50 kΩ

V

VHOME

(1)

50 kΩ

(2)

(1)

R

C

PCF5078

MGS204

MGS203

(1) C = 22 to 82 pF.

V_VHOME

V

_DD– V_VHOME

(2) R = -------------------------------------------- × R3

_VHOME– V_home

(2) R = -------------------------------------------- × R3

_home– V_VHOME

V

Fig.10 Suggested method to force externally

V_VHOME< V_home

Fig.11 Suggested method to force externally

V_VHOME> V_home

.

handbook, halfpage

VC

1

PCF5078

120 pF

700 Ω

MGS202

Fig.12 Typical output load on pin VC.

1999 Apr 12

12

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

PACKAGE OUTLINE

TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm

SOT505-1

D

E

A

X

c

y

H

v

M

A

E

Z

5

8

A

(A )

2

A

3

A

1

pin 1 index

θ

L

p

L

1

4

detail X

e

w M

b

p

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

A

(1)

(2)

(1)

A

b

c

D

E

e

H

L

p

UNIT

v

w

y

Z

θ

1

2

3

p

E

max.

0.15

0.05

0.95

0.80

0.45

0.25

0.28

0.15

3.10

2.90

3.10

2.90

5.10

4.70

0.70

0.40

0.70

0.35

6°

0°

mm

1.10

0.25

0.65

0.94

0.1

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

99-04-09

SOT505-1

1999 Apr 12

14

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

If wave soldering is used the following conditions must be

observed for optimal results:

SOLDERING

Introduction to soldering surface mount packages

• Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a

smooth laminar wave.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our “Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).

• For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the

transport direction of the printed-circuit board;

There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering is not always suitable

for surface mount ICs, or for printed-circuit boards with

high population densities. In these situations reflow

soldering is often used.

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the

printed-circuit board.

The footprint must incorporate solder thieves at the

downstream end.

Reﬂow soldering

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

to the printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement.

• For packages with leads on four sides, the footprint must

be placed at a 45° angle to the transport direction of the

printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

Several methods exist for reflowing; for example,

infrared/convection heating in a conveyor type oven.

Throughput times (preheating, soldering and cooling) vary

between 100 and 200 seconds depending on heating

method.

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Typical reflow peak temperatures range from

215 to 250 °C. The top-surface temperature of the

packages should preferable be kept below 230 °C.

Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

Wave soldering

Manual soldering

Conventional single wave soldering is not recommended

for surface mount devices (SMDs) or printed-circuit boards

with a high component density, as solder bridging and

non-wetting can present major problems.

Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or

less) soldering iron applied to the flat part of the lead.

Contact time must be limited to 10 seconds at up to

300 °C.

To overcome these problems the double-wave soldering

method was specifically developed.

When using a dedicated tool, all other leads can be

soldered in one operation within 2 to 5 seconds between

270 and 320 °C.

1999 Apr 12

15

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

Suitability of surface mount IC packages for wave and reﬂow soldering methods

SOLDERING METHOD

PACKAGE

WAVE

REFLOW⁽¹⁾

BGA, SQFP

not suitable

suitable

HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable⁽²⁾

PLCC⁽³⁾, SO, SOJ

LQFP, QFP, TQFP

SSOP, TSSOP, VSO

suitable

not recommended⁽³⁾⁽⁴⁾

not recommended⁽⁵⁾

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package

cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the

Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink

(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1999 Apr 12

16

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

NOTES

1999 Apr 12

17

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

NOTES

1999 Apr 12

18

Philips Semiconductors

Product speciﬁcation

Power ampliﬁer controller for GSM and

PCN systems

PCF5078

NOTES

1999 Apr 12

19

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Tel. +852 2319 7888, Fax. +852 2319 7700

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Colombia: see South America

Czech Republic: see Austria

Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

Slovenia: see Italy

Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. +45 33 29 3333, Fax. +45 33 29 3905

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,

Tel. +27 11 470 5911, Fax. +27 11 470 5494

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615 800, Fax. +358 9 6158 0920

France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 4099 6161, Fax. +33 1 4099 6427

South America: Al. Vicente Pinzon, 173, 6th floor,

04547-130 SÃO PAULO, SP, Brazil,

Tel. +55 11 821 2333, Fax. +55 11 821 2382

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 2353 60, Fax. +49 40 2353 6300

Spain: Balmes 22, 08007 BARCELONA,

Tel. +34 93 301 6312, Fax. +34 93 301 4107

Hungary: see Austria

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2741 Fax. +41 1 488 3263

Indonesia: PT Philips Development Corporation, Semiconductors Division,

Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,

Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. +90 212 279 2770, Fax. +90 212 282 6707

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,

TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Uruguay: see South America

Vietnam: see Singapore

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Middle East: see Italy

Tel. +381 11 62 5344, Fax.+381 11 63 5777

For all other countries apply to: Philips Semiconductors,

Internet: http://www.semiconductors.philips.com

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,

5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

SCA63

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

465008/00/01/pp20

Date of release: 1999 Apr 12

Document order number: 9397 750 04997


型号：	PCF5078
厂家：	NXP
描述：	Power amplifier controller for GSM and PCN systems 支持GSM和PCN系统功率放大器控制器放大器功率放大器个人通信控制器 GSM PC PCN
文件：	总20页 (文件大小：94K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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