PDTA114TU-T [NXP]
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal;
| 型号： | PDTA114TU-T |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal 晶体 晶体管 |
| 文件： | 总8页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTA114EE
PNP resistor-equipped transistor
Preliminary specification
1998 Jul 23
Supersedes data of 1997 Jul 03
File under Discrete Semiconductors, SC04
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114EE
FEATURES
• Built-in bias resistors R1 and R2
(typ. 10 kΩ each)
• Simplification of circuit design
handbook, halfpage
3
3
R1
R2
• Reduces number of components
and board space.
1
2
1
2
APPLICATIONS
Top view
MAM345
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
Fig.1 Simplified outline (SC-75) and symbol.
DESCRIPTION
MARKING
TYPE
PNP resistor-equipped transistor in
an SC-75 plastic package.
NPN complement: PDTC114EE.
MARKING
CODE
NUMBER
1
3
PDTA114EE
03
PINNING
2
MGA893 - 1
PIN
DESCRIPTION
base/input
1
2
3
Fig.2 Equivalent inverter
symbol.
emitter/ground (+)
collector/output
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEO
IO
collector-emitter voltage
output current (DC)
peak collector current
total power dissipation
DC current gain
open base
−
−
−
−
−
−
−
−
−
−50
−100
−100
150
−
V
mA
mA
mW
ICM
Ptot
hFE
R1
Tamb ≤ 25 °C
IC = −5 mA; VCE = −5 V
30
7
input resistor
10
13
kΩ
R2
-------
R1
resistor ratio
0.8
1
1.2
1998 Jul 23
2
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114EE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
−50
UNIT
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
−
−
−
V
V
V
open base
−50
−10
open collector
positive
−
−
−
−
−
+10
V
V
negative
−40
IO
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
−100
−100
150
mA
mA
mW
°C
ICM
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
+150
150
°C
Tamb
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
833
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
collector cut-off current
CONDITIONS
IC = 0; VCB = −50 V
MIN.
TYP. MAX. UNIT
ICBO
ICEO
−
−
−
−
−
−
−
−100
−1
nA
µA
µA
µA
IB = 0; VCE = −30 V
−
IB = 0; VCE = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
−
−50
−400
−
IEBO
hFE
emitter cut-off current
DC current gain
−
IC = −5 mA; VCE = −5 V
30
−
VCEsat
Vi(off)
Vi(on)
R1
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
−150
mV
mV
V
input-off voltage
input-on voltage
input resistor
IC = −100 µA; VCE = −5 V
−
−1100 −800
IC = −10 mA; VCE = −300 mV
−2.5
7
−1.8
−
10
13
kΩ
R2
-------
R1
resistor ratio
0.8
1
1.2
3
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz −
−
pF
1998 Jul 23
3
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114EE
MBK779
MBK780
3
10
−1
handbook, halfpage
handbook, halfpage
h
FE
(1)
(2)
V
CEsat
(V)
2
10
(3)
−1
−10
(1)
(2)
(3)
10
−2
−10
1
−10
−1
2
2
−1
−10
−10
−1
−10
−10
I
(mA)
I
(mA)
C
C
IC/IB = 20.
VCE = −5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3)
Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
MBK781
MBK782
2
−10
−10
handbook, halfpage
handbook, halfpage
V
i(on)
(V)
V
i(off)
(V)
−10
(1)
(2)
−1
(1) (2)(3)
(3)
−1
−1
−1
−10
−10
−2
−1
−1
2
−10
−10
−1
−10
−10
−1
−10
−10
I
(mA)
I
(mA)
C
C
VCE = −5 V.
VCE = −0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1998 Jul 23
4
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114EE
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
1
2
c
e
1
b
p
w
M
B
L
p
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
A
UNIT
b
c
D
E
e
e
H
L
p
Q
v
w
p
1
E
max
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1.75
1.45
0.45
0.15
0.23
0.13
0.95
0.60
mm
0.1
1
0.5
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT416
SC-75
1998 Jul 23
5
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114EE
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jul 23
6
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114EE
NOTES
1998 Jul 23
7
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
115104/00/02/pp8
Date of release: 1998 Jul 23
Document order number: 9397 750 04119
相关型号：
PDTA114YE,115
PDTA114Y series - PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ SC-75 3-Pin
NXP
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