PDTC143XTT/R [NXP]
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal;型号: | PDTC143XTT/R |
厂家: | NXP |
描述: | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
文件: | 总12页 (文件大小:126K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
Rev. 10 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number
Package
NXP
PNP complement
JEITA
SC-75
SC-89
SC-59A
SC-101
SC-43A
-
JEDEC
PDTC143XE
PDTC143XEF
PDTC143XK
PDTC143XM
PDTC143XS[1]
PDTC143XT
PDTC143XU
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
-
PDTA143XE
PDTA143XEF
PDTA143XK
PDTA143XM
PDTA143XS
PDTA143XT
PDTA143XU
-
TO-236
-
TO-92
TO-236AB
-
SC-70
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
Built-in bias resistors
Reduces component count
Simplifies circuit design
100 mA output current capability
Reduces pick and place costs
1.3 Applications
Digital applications
Cost-saving alternative for BC847 series
in digital applications
Controlling IC inputs
Switching loads
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
Quick reference data
Parameter
Conditions
Min
-
Typ
-
Max
50
Unit
V
collector-emitter voltage
output current
open base
-
-
100
6.1
2.6
mA
kΩ
R1
bias resistor 1 (input)
bias resistor ratio
3.3
1.7
4.7
2.1
R2/R1
PDTC143X series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
SOT54
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
1
1
1
1
1
1
2
3
R2
001aab347
006aaa145
SOT54A
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
R1
R1
R1
1
2
R2
3
001aab348
006aaa145
SOT54 variant
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
1
2
3
R2
001aab447
006aaa145
SOT23; SOT323; SOT346; SOT416; SOT490
1
2
3
input (base)
3
3
2
GND (emitter)
output (collector)
R2
1
2
006aaa144
sym007
SOT883
1
2
3
input (base)
1
2
3
2
GND (emitter)
output (collector)
3
Transparent
top view
R2
sym007
PDTC143X_SER_10
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 10 — 16 November 2009
2 of 12
PDTC143X series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
3. Ordering information
Table 4.
Ordering information
Type number Package
Name
Description
Version
SOT416
SOT490
SOT346
SOT883
PDTC143XE
SC-75
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
PDTC143XEF SC-89
PDTC143XK
PDTC143XM
SC-59A
SC-101
leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
PDTC143XS[1] SC-43A
plastic single-ended leaded (through hole) package; SOT54
3 leads
PDTC143XT
PDTC143XU
-
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
SOT23
SC-70
SOT323
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5.
Marking codes
Type number
PDTC143XE
PDTC143XEF
PDTC143XK
PDTC143XM
PDTC143XS
PDTC143XT
PDTC143XU
Marking code[1]
34
54
26
E2
TC143X
*32
*53
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PDTC143X_SER_10
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 10 — 16 November 2009
3 of 12
PDTC143X series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
VI
Parameter
Conditions
open emitter
open base
Min
Max
50
50
7
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
-
-
-
V
open collector
V
positive
-
-
-
-
+20
−7
V
negative
V
IO
output current
100
100
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
Ptot
total power dissipation
SOT416
Tamb ≤ 25 °C
[1]
[1][2]
[1]
-
150
250
250
250
500
250
200
+150
150
+150
mW
mW
mW
mW
mW
mW
mW
°C
SOT490
-
SOT346
-
[2][3]
[1]
SOT883
-
SOT54
-
[1]
SOT23
-
[1]
SOT323
-
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
-
°C
Tamb
−65
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
PDTC143X_SER_10
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 10 — 16 November 2009
4 of 12
PDTC143X series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
in free air
junction to ambient
[1]
[1][2]
[1]
SOT416
-
-
-
-
-
-
-
-
-
-
-
-
-
-
833
500
500
500
250
500
625
K/W
K/W
K/W
K/W
K/W
K/W
K/W
SOT490
SOT346
[2][3]
[1]
SOT883
SOT54
[1]
SOT23
[1]
SOT323
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
7. Characteristics
Table 8.
Characteristics
T
amb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
-
-
100
nA
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
-
-
1
μA
μA
VCE = 30 V; IB = 0 A;
50
Tj = 150 °C
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
600
μA
hFE
DC current gain
VCE = 5 V; IC = 10 mA
IC = 10 mA; IB = 0.5 mA
50
-
-
-
-
VCEsat
collector-emitter
100
mV
saturation voltage
VI(off)
VI(on)
R1
off-state input voltage VCE = 5 V; IC = 100 μA
on-state input voltage VCE = 300 mV; IC = 20 mA
bias resistor 1 (input)
-
-
0.3
-
V
2.5
3.3
1.7
-
-
V
4.7
2.1
-
6.1
2.6
2.5
kΩ
R2/R1
Cc
bias resistor ratio
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
pF
PDTC143X_SER_10
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 10 — 16 November 2009
5 of 12
PDTC143X series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
006aaa178
006aaa179
3
3
10
10
h
FE
(2)
(1)
(3)
V
CEsat
(mV)
2
10
2
10
(2) (1)
(3)
10
1
10
10
−1
2
2
1
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa180
006aaa181
2
10
10
V
I(on)
(V)
V
I(off)
(V)
10
(1)
(2)
1
(1)
(2)
(3)
(3)
1
−1
10
−1
10
10
10
−1
2
−2
−1
10
1
10
10
1
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
Fig 4. Off-state input voltage as a function of
collector current; typical values
PDTC143X_SER_10
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 10 — 16 November 2009
6 of 12
PDTC143X series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
8. Package outline
3.1
2.7
1.3
1.0
1.8
1.4
0.95
0.60
3
0.6
0.2
3
0.45
0.15
3.0 1.7
2.5 1.3
1.75 0.9
1.45 0.7
1
2
1
2
0.30
0.15
0.25
0.10
0.50
0.35
0.26
0.10
1.9
1
Dimensions in mm
04-11-04
Dimensions in mm
04-11-11
Fig 5. Package outline SOT416 (SC-75)
Fig 6. Package outline SOT346 (SC-59A/TO-236)
0.62
0.55
0.50
0.46
0.55
0.47
0.45
0.38
4.2
3.6
3
0.30
0.22
0.48
0.40
1.02
0.95
0.65
1
2
4.8
4.4
2.54
0.30
0.22
1.27
3
2
1
0.20
0.12
5.2
5.0
14.5
12.7
0.35
Dimensions in mm
03-04-03
Dimensions in mm
04-11-16
Fig 7. Package outline SOT883 (SC-101)
Fig 8. Package outline SOT54 (SC-43A/TO-92)
0.45
0.38
0.45
0.38
4.2
3.6
4.2
3.6
1.27
0.48
0.40
3 max
1
2.5
max
0.48
0.40
1
2
3
2
4.8
4.4
5.08
4.8
4.4
2.54
1.27
2.54
3
5.2
5.0
14.5
12.7
5.2
5.0
14.5
12.7
Dimensions in mm
04-06-28
Dimensions in mm
05-01-10
Fig 9. Package outline SOT54A
Fig 10. Package outline SOT54 variant
PDTC143X_SER_10
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 10 — 16 November 2009
7 of 12
PDTC143X series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
3.0
2.8
1.1
0.9
2.2
1.8
1.1
0.8
0.45
0.15
3
3
0.45
0.15
2.5 1.4
2.1 1.2
2.2 1.35
2.0 1.15
1
2
1
2
0.4
0.3
0.25
0.10
0.48
0.38
0.15
0.09
1.9
1.3
Dimensions in mm
04-11-04
Dimensions in mm
04-11-04
Fig 11. Package outline SOT23 (TO-236AB)
Fig 12. Package outline SOT323 (SC-70)
1.7
1.5
0.8
0.6
3
0.5
0.3
1.7 0.95
1.5 0.75
1
2
0.2
0.1
0.33
0.23
1
Dimensions in mm
98-10-23
Fig 13. Package outline SOT490 (SC-89)
PDTC143X_SER_10
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 10 — 16 November 2009
8 of 12
PDTC143X series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
Packing quantity
3000 4000 5000 10000
PDTC143XE SOT416
PDTC143XEF SOT490
PDTC143XK SOT346
PDTC143XM SOT883
PDTC143XS SOT54
SOT54A
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
bulk, straight leads
-115
-
-
-135
-
-
-115
-
-115
-
-
-
-
-
-
-
-
-
-135
-315
-
-
-
-
-412
tape and reel, wide pitch
-
-
-116
-126
-
tape ammopack, wide pitch
-
-
SOT54 variant bulk, delta pinning
-
-112
PDTC143XT SOT23
PDTC143XU SOT323
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
-215
-115
-
-
-235
-135
[1] For further information and the availability of packing methods, see Section 12.
PDTC143X_SER_10
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 10 — 16 November 2009
9 of 12
PDTC143X series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
10. Revision history
Table 10. Revision history
Document ID
Release date
20091116
Data sheet status
Change notice
Supersedes
PDTC143X_SER_10
Modifications:
Product data sheet
-
PDTC143X_SER_9
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
PDTC143X_SER_9
20050726
20040806
20040323
20040112
20031112
20030910
20030410
Product data sheet
Product specification
Product specification
Product specification
Product specification
Product specification
Product specification
-
-
-
-
-
-
-
PDTC143X_SERIES_8
PDTC143X_SERIES_7
PDTC143X_SERIES_6
PDTC143X_SERIES_5
PDTC143X_SERIES_4
PDTC143X_SERIES_3
PDTC143X_SERIES_8
PDTC143X_SERIES_7
PDTC143X_SERIES_6
PDTC143X_SERIES_5
PDTC143X_SERIES_4
PDTC143X_SERIES_3
PDTC143XE_2
PDTC143XK_1
PDTC143XT_1
PDTC143XE_2
PDTC143XE_1
PDTC143XK_1
PDTC143XT_1
19990521
19980529
20020115
19990420
Product specification
Product specification
Product specification
Product specification
-
-
-
-
PDTC143XE_1
-
-
-
PDTC143X_SER_10
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 10 — 16 November 2009
10 of 12
PDTC143X series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PDTC143X_SER_10
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 10 — 16 November 2009
11 of 12
PDTC143X series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 November 2009
Document identifier: PDTC143X_SER_10
相关型号:
PDTC143ZE,115
PDTC143Z series - NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ SC-75 3-Pin
NXP
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