PEMD30,115 [NXP]
PEMD30; PUMD30 - NPN/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open SOT 6-Pin;型号: | PEMD30,115 |
厂家: | NXP |
描述: | PEMD30; PUMD30 - NPN/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open SOT 6-Pin 开关 光电二极管 晶体管 |
文件: | 总11页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 01 — 31 March 2006
Product data sheet
1. Product profile
1.1 General description
NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Type number
Package
Philips
PNP/PNP
complement
NPN/NPN
complement
JEITA
-
PEMD30
PUMD30
SOT666
SOT363
PEMB30
PUMB30
PEMH30
PUMH30
SC-88
1.2 Features
I 100 mA output current capability
I Built-in bias resistors
I Reduces component count
I Reduces pick and place costs
I Simplifies circuit design
1.3 Applications
I Low current peripheral driver
I Cost-saving alternative for BC847BPN
and BC847BVN
I Control of IC inputs
I Switching loads
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCEO
IO
collector-emitter voltage
output current
open base
-
-
50
V
-
-
100
2.86
mA
kΩ
R1
bias resistor 1 (input)
1.54
2.2
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2. Pinning information
Table 3.
Pinning
Pin
1
Description
Simplified outline
Symbol
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
6
5
4
6
5
4
2
3
R1
4
TR2
TR1
5
1
2
3
R1
6
001aab555
1
2
3
006aaa269
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
-
Description
Version
SOT666
SOT363
PEMD30
PUMD30
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
SC-88
4. Marking
Table 5.
Marking codes
Type number
PEMD30
Marking code[1]
2U
PUMD30
*B3
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PEMD30_PUMD30_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2006
2 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IO
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current
open emitter
open base
-
-
-
-
-
50
50
V
V
open collector
5
V
100
100
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
Ptot
total power dissipation
SOT363
Tamb ≤ 25 °C
[1]
-
-
200
200
mW
mW
[1][2]
SOT666
Per device
Ptot
total power dissipation
SOT363
Tamb ≤ 25 °C
[1]
-
300
mW
mW
°C
[1][2]
SOT666
-
300
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
-
+150
150
°C
Tamb
−65
+150
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max Unit
Rth(j-a)
thermal resistance from
in free air
junction to ambient
[1]
SOT363
-
-
-
-
625
625
K/W
K/W
[1][2]
SOT666
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
SOT363
SOT666
-
-
-
-
416
416
K/W
K/W
[1][2]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMD30_PUMD30_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2006
3 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Per transistor; for the PNP transistor with negative polarity
Min
Typ
Max Unit
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A
-
-
100
nA
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A
-
-
-
-
1
µA
µA
current
VCE = 30 V; IB = 0 A;
50
Tj = 150 °C
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 5 V; IC = 20 mA
IC = 10 mA; IB = 0.5 mA
30
-
-
-
-
VCEsat
collector-emitter
150
mV
saturation voltage
R1
Cc
bias resistor 1 (input)
collector capacitance
1.54 2.2
2.86 kΩ
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
TR1 (NPN)
TR2 (PNP)
-
-
-
-
2.5
3
pF
pF
PEMD30_PUMD30_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2006
4 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
006aaa696
006aaa697
500
1
h
FE
(1)
(2)
400
V
CEsat
(V)
300
200
100
0
−1
10
(1)
(2)
(3)
(3)
−2
10
−1
2
−1
2
10
1
10
10
10
1
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 2. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa691
006aaa692
500
−1
h
FE
(1)
400
V
CEsat
(V)
300
200
100
0
(2)
(3)
−1
−10
(1)
(2)
(3)
−2
−10
−1
2
−1
2
−10
−1
−10
−10
−10
−1
−10
−10
I
(mA)
I (mA)
C
C
VCE = −5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 3. TR2 (PNP): DC current gain as a function of
collector current; typical values
Fig 4. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
PEMD30_PUMD30_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2006
5 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
8. Package outline
2.2
1.8
1.1
0.8
1.7
1.5
0.6
0.5
0.45
0.15
6
5
4
6
5
4
0.3
0.1
2.2 1.35
2.0 1.15
1.7 1.3
1.5 1.1
pin 1
index
pin 1 index
1
2
3
1
2
3
0.25
0.10
0.3
0.2
0.18
0.08
0.27
0.17
0.65
0.5
1.3
1
Dimensions in mm
04-11-08
Dimensions in mm
04-11-08
Fig 5. Package outline SOT363 (SC-88)
Fig 6. Package outline SOT666
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 4000 8000 10000
PEMD30
SOT666 2 mm pitch, 8 mm tape and reel
-
-
-315
-
4 mm pitch, 8 mm tape and reel
SOT363 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-
-115
-
-
-
-
[2]
[3]
PUMD30
-115
-125
-
-
-135
-165
[1] For further information and the availability of packing methods, see Section 13.
[2] T1: normal taping
[3] T2: reverse taping
PEMD30_PUMD30_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2006
6 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
10. Soldering
2.65
0.60
(2×)
0.40
(2×)
2.35
0.90 2.10
0.50
(4×)
solder paste
solder lands
solder resist
occupied area
0.50
(4×)
1.20
2.40
MSA432
Dimensions in mm
Fig 7. Reflow soldering footprint SOT363 (SC-88)
5.25
0.30 1.00 4.00
4.50
solder lands
1.15
3.75
solder resist
occupied area
transport direction during soldering
Dimensions in mm
sot363
Fig 8. Wave soldering footprint SOT363 (SC-88)
PEMD30_PUMD30_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2006
7 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2.75
2.45
2.10
1.60
0.15
(4×)
0.40
(6×)
0.55
(2×)
0.30 (2×)
2.00 1.70 1.00
0.375
(4×)
1.20
2.20
2.50
solder lands
solder resist
placement area
occupied area
0.075
Dimensions in mm
Reflow soldering is the only recommended soldering method.
Fig 9. Reflow soldering footprint SOT666
PEMD30_PUMD30_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2006
8 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
11. Revision history
Table 10. Revision history
Document ID
Release date
20060331
Data sheet status
Change notice
Supersedes
PEMD30_PUMD30_1
Product data sheet
-
-
PEMD30_PUMD30_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2006
9 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
malfunction of a Philips Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is for the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
PEMD30_PUMD30_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2006
10 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 6
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.
Date of release: 31 March 2006
Document identifier: PEMD30_PUMD30_1
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