PEMZ7 [NXP]

NPN/PNP general purpose transistors; NPN / PNP通用晶体管
PEMZ7
型号: PEMZ7
厂家: NXP    NXP
描述:

NPN/PNP general purpose transistors
NPN / PNP通用晶体管

晶体 晶体管
文件: 总12页 (文件大小:82K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PEMZ7  
NPN/PNP general purpose  
transistors  
Product specification  
2001 Nov 07  
Supersedes data of 2001 Sep 25  
Philips Semiconductors  
Product specification  
NPN/PNP general purpose transistors  
PEMZ7  
FEATURES  
PINNING  
300 mW total power dissipation  
Very small 1.6 × 1.2 mm ultra thin package  
Self alignment during soldering due to straight leads  
Low collector capacitance  
PIN  
DESCRIPTION  
1, 4  
2, 5  
6, 3  
emitter  
base  
TR1; TR2  
TR1; TR2  
TR1; TR2  
collector  
Low VCEsat  
High current capabilities  
Improved thermal behaviour due to flat leads  
Reduced required PCB area  
handbook, halfpage  
Reduced pick and place costs.  
6
5
2
4
6
5
4
APPLICATIONS  
TR2  
Heavy duty battery powered equipment (automotive,  
telecom and audio-video) such as motor and lamp  
drivers  
TR1  
1
2
3
1
3
VCEsat critical applications such as latest low supply  
MAM456  
Top view  
voltage IC applications  
All battery driven equipment, to save battery power.  
DESCRIPTION  
Fig.1 Simplified outline (SOT666) and symbol.  
NPN/PNP low VCEsat transistor pair in a SOT666 plastic  
package.  
MARKING  
TYPE NUMBER  
PEMZ7  
MARKING CODE  
Z7  
2001 Nov 07  
2
Philips Semiconductors  
Product specification  
NPN/PNP general purpose transistors  
PEMZ7  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
Per transistor; for the PNP transistor with negative polarity  
VCBO  
VCEO  
VEBO  
IC  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
open emitter  
open base  
15  
V
V
V
12  
open collector  
6
500  
1
mA  
A
ICM  
IBM  
100  
200  
+150  
150  
+150  
mA  
mW  
°C  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
Tamb 25 °C; note 1  
65  
°C  
Tamb  
65  
°C  
Per device  
Ptot  
total power dissipation  
Tamb 25 °C; note 1  
300  
mW  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
notes 1 and 2  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to  
ambient  
416  
K/W  
Notes  
1. Transistor mounted on an FR4 printed-circuit board.  
2. The only recommended soldering method is reflow soldering.  
2001 Nov 07  
3
Philips Semiconductors  
Product specification  
NPN/PNP general purpose transistors  
PEMZ7  
CHARACTERISTICS  
Tamb = 25 °C; unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
Per transistor; for the PNP transistor with negative polarity  
ICBO  
collector-base cut-off current  
VCB = 15 V; IE = 0  
CB = 15 V; IE = 0; Tj = 150 °C  
100  
50  
nA  
µA  
nA  
V
IEBO  
hFE  
emitter-base cut-off current  
DC current gain  
VEB = 5 V; IC = 0  
100  
VCE = 2 V; IC = 10 mA  
IC = 200 mA; IB = 10 mA  
200  
VCEsat  
collector-emitter saturation  
voltage  
220  
mV  
fT  
transition frequency  
TR1 (NPN)  
IC = 100 mA; VCE = 5 V;  
f = 100 MHz  
250  
100  
420  
280  
MHz  
MHz  
TR2 (PNP)  
Cc  
collector capacitance  
TR1 (NPN)  
VCB = 10 V; IE = Ie = 0; f = 1 MHz  
4.4  
6
pF  
pF  
TR2 (PNP)  
10  
MLD672  
MHC014  
600  
1200  
handbook, halfpage  
handbook, halfpage  
h
(1)  
FE  
(3)  
(2)  
(4)  
(1)  
I
C
500  
(mA)  
(5)  
(6)  
800  
400  
300  
200  
100  
0
(2)  
(3)  
(7)  
(8)  
400  
(9)  
(10)  
0
1  
2
3
10  
1
10  
10  
10  
0
2
4
6
8
10  
(V)  
I
(mA)  
V
C
CE  
TR1 (NPN); Tamb = 25 °C.  
(1) IB = 4.60 mA  
(2) IB = 4.14 mA  
(3) IB = 3.68 mA  
(4) IB = 3.22 mA  
(5) IB = 2.76 mA  
(6) IB = 2.30 mA  
(7) IB = 1.84 mA  
(8) IB = 1.38 mA  
(9) IB = 0.92 mA  
(10) IB = 0.46 mA  
TR1 (NPN); VCE = 2 V.  
(1) Tamb = 150 °C.  
(2)  
Tamb = 25 °C.  
(3) Tamb = 55 °C.  
Fig.2 DC current gain as a function of collector  
current; typical values.  
Fig.3 Collector current as a function of  
collector-emitter voltage; typical values.  
2001 Nov 07  
4
Philips Semiconductors  
Product specification  
NPN/PNP general purpose transistors  
PEMZ7  
MLD673  
MHC017  
1200  
1200  
handbook, halfpage  
handbook, halfpage  
V
V
BEsat  
(mV)  
BE  
(mV)  
1000  
1000  
(1)  
(1)  
(2)  
800  
800  
600  
(2)  
600  
(3)  
(3)  
400  
400  
200  
200  
10  
1  
2
3
1  
2
3
1
10  
10  
10  
10  
1
10  
10  
10  
I
(mA)  
I
(mA)  
C
C
TR1 (NPN); VCE = 2 V.  
(1) Tamb = 55 °C.  
TR1 (NPN); IC/IB = 20.  
(1) Tamb = 150 °C.  
(2)  
Tamb = 25 °C.  
(2)  
Tamb = 25 °C.  
(3) Tamb = 150 °C.  
(3) Tamb = 55 °C.  
Fig.4 Base-emitter voltage as a function of  
collector current; typical values.  
Fig.5 Base-emitter saturation voltage as a  
function of collector current; typical values.  
MHC018  
MHC019  
3
10  
600  
handbook, halfpage  
handbook, halfpage  
h
FE  
V
CEsat  
(1)  
500  
(mV)  
2
10  
400  
300  
200  
100  
0
(2)  
(3)  
(1)  
10  
(2)  
(3)  
1
10  
1  
2
3
1  
2
3
1
10  
10  
10  
10  
1  
10  
10  
10  
I
(mA)  
I
(mA)  
C
C
TR1 (NPN); IC/IB = 20.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
TR2 (PNP); VCE = 2 V.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
Fig.6 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.7 DC current gain as a function of collector  
current; typical values.  
2001 Nov 07  
5
Philips Semiconductors  
Product specification  
NPN/PNP general purpose transistors  
PEMZ7  
MLD650  
MLD667  
1200  
1200  
handbook, halfpage  
handbook, halfpage  
V
BE  
(3)  
(2)  
(4)  
(1)  
I
(mV)  
C
(mA)  
1000  
(5)  
(6)  
(1)  
(2)  
800  
800  
600  
(7)  
(8)  
(9)  
400  
(3)  
(10)  
400  
200  
0
1  
2
3
10  
1  
10  
10  
10  
(mA)  
0
2  
4  
6  
8  
10  
(V)  
I
C
V
CE  
TR2 (PNP); Tamb = 25 °C.  
(1) IB = 7.0 mA  
(2) IB = 6.3 mA  
(5) IB = 4.2 mA  
(6) IB = 3.5 mA  
(9) IB = 1.4 mA  
(10) IB = 0.7 mA  
TR2 (PNP); VCE = 2 V.  
(1) Tamb = 55 °C.  
(3)  
IB = 5.6 mA  
(7)  
IB = 2.8 mA  
(2)  
Tamb = 25 °C.  
(4) IB = 4.9 mA  
(8) IB = 2.1 mA  
(3) Tamb = 150 °C.  
Fig.8 Collector current as a function of  
collector-emitter voltage; typical values.  
Fig.9 Base-emitter voltage as a function of  
collector current; typical values.  
MHC022  
MHC023  
3
10  
1200  
handbook, halfpage  
handbook, halfpage  
V
BEsat  
V
(mV)  
CEsat  
(mV)  
1000  
2
(1)  
10  
(1)  
800  
(2)  
(3)  
(2)  
600  
10  
1  
(3)  
400  
200  
10  
1  
2
3
1  
2
3
10  
1  
10  
10  
10  
1  
10  
10  
10  
I
(mA)  
I
(mA)  
C
C
TR2 (PNP); IC/IB = 20.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
TR2 (PNP); IC/IB = 20.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
Fig.10 Base-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.11 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
2001 Nov 07  
6
Philips Semiconductors  
Product specification  
NPN/PNP general purpose transistors  
PEMZ7  
PACKAGE OUTLINE  
Plastic surface mounted package; 6 leads  
SOT666  
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index  
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6  
0.5  
0.27  
0.17  
0.18  
0.08  
1.7  
1.5  
1.3  
1.1  
1.7  
1.5  
0.3  
0.1  
mm  
1.0  
0.5  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
01-01-04  
01-08-27  
SOT666  
2001 Nov 07  
7
Philips Semiconductors  
Product specification  
NPN/PNP general purpose transistors  
PEMZ7  
DATA SHEET STATUS  
PRODUCT  
DATA SHEET STATUS(1)  
STATUS(2)  
DEFINITIONS  
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Changes will be  
communicated according to the Customer Product/Process Change  
Notification (CPCN) procedure SNW-SQ-650A.  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified.  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2001 Nov 07  
8
Philips Semiconductors  
Product specification  
NPN/PNP general purpose transistors  
PEMZ7  
NOTES  
2001 Nov 07  
9
Philips Semiconductors  
Product specification  
NPN/PNP general purpose transistors  
PEMZ7  
NOTES  
2001 Nov 07  
10  
Philips Semiconductors  
Product specification  
NPN/PNP general purpose transistors  
PEMZ7  
NOTES  
2001 Nov 07  
11  
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2001  
SCA73  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/02/pp12  
Date of release: 2001 Nov 07  
Document order number: 9397 750 09054  

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