PESD12VS1UL [NXP]
ESD protection diodes in a SOD882 package; ESD保护二极管在SOD882封装
| 型号： | PESD12VS1UL |
| 厂家： | 
NXP |
| 描述： | ESD protection diodes in a SOD882 package |
| 文件： | 总13页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PESDxS1UL series
ESD protection diodes in a SOD882 package
Rev. 02 — 20 August 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882 leadless
ultra small Surface Mounted Device (SMD) plastic package designed to protect one signal
line from the damage caused by ESD and other transients.
1.2 Features
I Ultra small SMD plastic package
I Ultra low leakage current: IRM < 700 nA
I ESD protection up to 30 kV
I ESD protection of one line
I Max. peak pulse power: PPP = 150 W
I Low clamping voltage: VCL = 20 V
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5; (surge); IPP up to 15 A
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Parallel ports
I Communication systems
I High-speed data lines
1.4 Quick reference data
Table 1.
Symbol Parameter
VRWM reverse stand-off voltage
Quick reference data
Conditions
Min
Typ
Max
Unit
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
diode capacitance
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
-
-
-
-
-
-
-
-
-
-
3.3
5.0
12
15
24
V
V
V
V
V
Cd
f = 1 MHz; VR = 0 V
-
-
-
-
-
207
152
38
300
200
75
pF
pF
pF
pF
pF
32
70
23
50
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
2. Pinning information
Table 2.
Pinning
Pin
1
Description
cathode
Simplified outline
Symbol
[1]
1
2
2
anode
1
2
sym035
Transparent
top view
[1] The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
leadless ultra small plastic package; 2 terminals; SOD882
body 1.0 × 0.6 × 0.5 mm
4. Marking
Table 4.
Marking codes
Type number
Marking code
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
G1
G2
G3
G4
G5
PESDXS1UL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
2 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
PPP
Parameter
Conditions
tp = 8/20 µs
tp = 8/20 µs
Min
Max
Unit
[1]
[1]
peak pulse power
peak pulse current
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
junction temperature
ambient temperature
storage temperature
-
150
W
IPP
-
15
A
-
15
A
-
5
A
-
5
A
-
3
A
Tj
-
150
+150
+150
°C
°C
°C
Tamb
Tstg
−65
−65
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Table 6.
Symbol Parameter
VESD electrostatic discharge voltage
ESD maximum ratings
Conditions
Min
Max
Unit
[1]
IEC 61000-4-2
(contact discharge)
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
PESDxS1UL series
-
-
-
-
-
-
30
30
30
30
23
10
kV
kV
kV
kV
kV
kV
HBM MIL-STD-883
[1] Device stressed with ten non-repetitive ESD pulses.
Table 7.
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD)
HBM MIL-STD-883; class 3
> 15 kV (air); > 8 kV (contact)
> 4 kV
PESDXS1UL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
3 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
001aaa631
I
PP
001aaa630
120
100 %
90 %
100 % I ; 8 µs
PP
I
PP
(%)
80
−t
e
50 % I ; 20 µs
PP
40
10 %
t
t = 0.7 ns to 1 ns
r
0
30 ns
60 ns
0
10
20
30
40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
IEC 61000-4-5
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max Unit
VRWM
reverse stand-off voltage
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
reverse leakage current
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
breakdown voltage
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
-
-
-
-
-
-
-
-
-
-
3.3
5.0
12
15
24
V
V
V
V
V
IRM
VRWM = 3.3 V
VRWM = 5.0 V
VRWM = 12 V
VRWM = 15 V
VRWM = 24 V
IR = 5 mA
-
-
-
-
-
0.7
0.1
< 1
< 1
< 1
2
µA
µA
nA
nA
nA
1
50
50
50
VBR
5.2
6.4
5.6
6.8
6.0
7.2
V
V
V
V
V
14.7 15.0 15.3
17.6 18.0 18.4
26.5 27.0 27.5
PESDXS1UL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
4 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
Table 8.
Characteristics …continued
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max Unit
Cd
diode capacitance
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
clamping voltage
PESD3V3S1UL
f = 1 MHz; VR = 0 V
-
-
-
-
-
207
152
38
300
200
75
pF
pF
pF
pF
pF
32
70
23
50
[1]
VCL
IPP = 1 A
IPP = 15 A
IPP = 1 A
IPP = 15 A
IPP = 1 A
IPP = 5 A
IPP = 1 A
IPP = 5 A
IPP = 1 A
IPP = 3 A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
V
V
V
V
V
V
V
V
V
V
20
9
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
20
19
35
23
40
36
70
rdif
differential resistance
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
IR = 1 mA
IR = 1 mA
IR = 1 mA
IR = 1 mA
IR = 0.5 mA
-
-
-
-
-
-
-
-
-
-
400
80
Ω
Ω
Ω
Ω
Ω
200
225
300
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
PESDXS1UL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
5 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
001aaa726
001aaa193
4
10
1.2
P
PP
P
PP
(W)
P
PP(25°C)
3
10
0.8
2
10
0.4
10
0
2
3
1
10
10
10
0
50
100
150
200
t
(µs)
T (°C)
j
p
Tamb = 25 °C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
001aaa727
001aaa728
240
50
C
d
C
d
(pF)
200
(pF)
40
160
120
80
30
20
10
0
(1)
(2)
(1)
(2)
(3)
40
0
1
2
3
4
5
0
5
10
15
20
25
V
(V)
V (V)
R
R
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3S1UL; VRWM = 3.3 V
(2) PESD5V0S1UL; VRWM = 5.0 V
(1) PESD12VS1UL; VRWM = 12 V
(2) PESD15VS1UL; VRWM = 15 V
(3) PESD24VS1UL; VRWM = 24 V
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Diode capacitance as a function of reverse
voltage; typical values
PESDXS1UL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
6 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
I
001aaa729
10
I
RM
I
RM(25°C)
(1)
(2)
−V
−V
−V
V
CL
BR
RWM
−I
−I
RM
R
1
−
+
P-N
−1
−I
10
PP
−100
−50
0
50
100
150
T (°C)
j
006aaa407
(1) PESD3V3S1UL; VRWM = 3.3 V
(2) PESD5V0S1UL; VRWM = 5.0 V
IR is less than 15 nA at 150 °C for:
PESD12VS1UL; VRWM = 12 V
PESD15VS1UL; VRWM = 15 V
PESD24VS1UL; VRWM = 24 V
Fig 7. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
Fig 8. V-I characteristics for a unidirectional ESD
protection diode
PESDXS1UL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
7 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
ESD TESTER
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
R
d
450 Ω
10×
ATTENUATOR
C
s
50 Ω
note 1
D.U.T.
(DEVICE
UNDER
TEST)
Note 1: IEC 61000-4-2 network
= 150 pF; R = 330 Ω
C
s
d
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
PESD24VS1UL
GND
PESD15VS1UL
PESD12VS1UL
GND
GND
GND
GND
PESD5V0S1UL
PESD3V3S1UL
GND
unclamped +1 kV ESD voltage waveform
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
(IEC 61000-4-2 network)
GND
GND
vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aaa682
Fig 9. ESD clamping test setup and waveforms
PESDXS1UL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
8 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
7. Application information
The PESDxS1UL series is designed for protection of one unidirectional data line from the
damage caused by ESD and surge pulses. The PESDxS1UL series may be used on lines
where the signal polarities are either positive or negative with respect to ground. The
PESDxS1UL series provides a surge capability of 150 W for an 8/20 µs waveform.
line to be protected
line to be protected
(positive signal polarity)
(negative signal polarity)
PESDxS1UL
PESDxS1UL
ground
ground
unidirectional protection of one line
006aaa681
Fig 10. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxS1UL as close to the input terminal or connector as possible.
2. The path length between the PESDxS1UL and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESDXS1UL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
9 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
8. Package outline
0.50
0.46
0.62
0.55
2
1
0.30
0.22
1.02
0.95
0.65
0.30
0.22
0.55
0.47
cathode marking on top side
03-04-17
Dimensions in mm
Fig 11. Package outline SOD882
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
10000
PESD3V3S1UL SOD882
PESD5V0S1UL
4 mm pitch, 8 mm tape and reel
-315
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
[1] For further information and the availability of packing methods, see Section 12.
PESDXS1UL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
10 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
10. Revision history
Table 10. Revision history
Document ID
Release date
20090820
Data sheet status
Change notice
Supersedes
PESDXS1UL_SER_2
Modifications:
Product data sheet
-
PESDXS1UL_SER_1
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
PESDXS1UL_SER_1
20060331
Product data sheet
-
-
PESDXS1UL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
11 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PESDXS1UL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
12 of 13
PESDxS1UL series
NXP Semiconductors
ESD protection diodes in a SOD882 package
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 August 2009
Document identifier: PESDXS1UL_SER_2
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SI9137LG
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SI9122E
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