PESD24VS2UAT [NXP]
Double ESD protection diodes in SOT23 package; 双重ESD保护二极管，采用SOT23封装
| 型号： | PESD24VS2UAT |
| 厂家： | 
NXP |
| 描述： | Double ESD protection diodes in SOT23 package |
| 文件： | 总13页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PESDxS2UAT series
Double ESD protection diodes
in SOT23 package
Product specification
2004 Feb 18
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UAT series
FEATURES
QUICK REFERENCE DATA
• Unidirectional ESD protection of up to two lines
• Common-cathode configuration
SYMBOL
PARAMETER
VALUE
UNIT
VRWM
reverse stand-off
voltage
3.3, 5, 12, 15
and 24
V
• Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs
• Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A
• Ultra-low reverse leakage current: IRM < 700 nA
• ESD protection > 30 kV
Cd
diode capacitance 207, 152, 38, 32 pF
VR = 0 V;
f = 1 MHz
and 23
2
number of
protected lines
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.
PINNING
PIN
APPLICATIONS
DESCRIPTION
• Computers and peripherals
• Communication systems
• Audio and video equipment
• Data lines
1
2
3
anode 1
anode 2
common cathode
• CAN bus protection.
DESCRIPTION
Unidirectional double ESD protection diodes in common
cathode configuration in the SOT23 plastic package.
Designed to protect up to two transmission or data lines
against damage from ElectroStatic Discharge (ESD) and
other transients.
1
2
3
1
2
3
MARKING
sym002
001aaa401
TYPE NUMBER
PESD3V3S2UAT
MARKING CODE(1)
*7A
*7B
*7C
*7D
*7E
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
Fig.1 Simplified outline (SOT23) and symbol.
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
2004 Feb 18
2
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UAT series
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
−
plastic surface mounted package; 3 leads
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Ppp
PARAMETER
peak pulse power
CONDITIONS
MIN.
MAX.
UNIT
8/20 µs pulse; notes 1 and 2
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
peak pulse current
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
junction temperature
operating ambient temperature
storage temperature
−
−
−
−
−
330
W
260
180
160
160
W
W
W
W
Ipp
8/20 µs pulse; notes 1 and 2
−
−
−
−
−
−
18
A
15
A
5
A
5
A
3
A
Tj
150
+150
+150
°C
°C
°C
Tamb
Tstg
−65
−65
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.
2. Measured across either pins 1 and 3 or pins 2 and 3.
2004 Feb 18
3
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UAT series
ESD maximum ratings
SYMBOL
ESD
PARAMETER
CONDITIONS
VALUE
UNIT
electrostatic discharge
IEC 61000-4-2 (contact discharge);
notes 1 and 2
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
HBM MIL-Std 883
PESDxS2UAT-series
30
30
30
30
23
kV
kV
kV
kV
kV
10
kV
Notes
1. Device stressed with ten non-repetitive ESD pulses; see Fig.3.
2. Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
ESD standards compliance
ESD STANDARD
CONDITIONS
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD); see Fig.3
HBM MIL-Std 883; class 3
001aaa191
MLE218
I
pp
120
handbook, halfpage
100 %
90 %
I
pp
100 % I ; 8 µs
pp
(%)
80
−t
e
50 % I ; 20 µs
pp
40
10 %
t
0
t = 0.7 to 1 ns
r
0
10
20
30
40
30 ns
t (µs)
60 ns
Fig.2 8/20 µs pulse waveform according to
Fig.3 ElectroStatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
IEC 61000-4-5.
2004 Feb 18
4
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UAT series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
VRWM
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
reverse stand-off voltage
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
reverse leakage current
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
breakdown voltage
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
diode capacitance
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
clamping voltage
PESD3V3S2UAT
−
−
−
−
−
−
−
−
−
−
3.3
V
V
V
V
V
5
12
15
24
IRM
VRWM = 3.3 V
−
−
−
−
−
0.7
0.1
<1
<1
<1
2
µA
µA
nA
nA
nA
VRWM = 5 V
1
VRWM = 12 V
50
50
50
V
RWM = 15 V
VRWM = 24 V
IZ = 5 mA
VBR
5.2
5.6
6.0
V
V
V
V
V
6.4
6.8
7.2
14.7
17.6
26.5
15.0
18.0
27.0
15.3
18.4
27.5
Cd
f = 1 MHz; VR = 0 V
−
−
−
−
−
207
152
38
300
200
75
pF
pF
pF
pF
pF
32
70
23
50
V(CL)R
notes 1 and 2
Ipp = 1 A
Ipp = 18 A
Ipp = 1 A
Ipp = 15 A
Ipp = 1 A
Ipp = 5 A
Ipp = 1 A
Ipp = 5 A
Ipp = 1 A
Ipp = 3 A
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
7
V
V
V
V
V
V
V
V
V
V
20
9
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
20
19
35
23
40
36
70
2004 Feb 18
5
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UAT series
SYMBOL
Rdiff
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
differential resistance
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
IR = 1 mA
−
−
−
−
−
−
−
−
−
−
400
Ω
IR = 1 mA
IR = 1 mA
IR = 1 mA
IR = 0.5 mA
80
Ω
Ω
Ω
Ω
200
225
300
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.
2. Measured either across pins 1 and 3 or pins 2 and 3.
GRAPHICAL DATA
001aaa147
001aaa193
4
10
1.2
P
pp
P
pp
(W)
P
pp(25˚C)
3
10
0.8
(1)
(2)
2
10
0.4
10
0
2
3
4
1
10
10
10
10
0
50
100
150
200
t
(µs)
p
T (°C)
j
(1) PESD3V3S2UAT and PESD5V0S2UAT.
(2) PESD12VS2UAT, PESD15VS2UAT, PESD24VS2UAT
Tamb = 25 °C.
tp = 8/20 µs exponential decay waveform; see Fig.2.
Fig.5 Relative variation of peak pulse power as a
function of junction temperature; typical
values.
Fig.4 Peak pulse power dissipation as a function
of pulse time; typical values.
2004 Feb 18
6
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UAT series
001aaa148
001aaa149
240
50
C
d
C
d
(pF)
200
(pF)
40
160
120
80
30
20
10
0
(1)
(2)
(1)
(2)
(3)
40
0
1
2
3
4
5
0
5
10
15
20
25
V
R
(V)
V
(V)
R
(1) PESD12VS2UAT; VRWM = 12 V.
(2) PESD15VS2UAT; VRWM = 15 V.
(3) PESD24VS2UAT; VRWM = 24 V.
(1) PESD3V3S2UAT; VRWM = 3.3 V.
(2) PESD5V0S2UAT; VRWM = 5 V.
Tamb = 25 °C; f = 1 MHz.
Tamb = 25 °C; f = 1 MHz.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
2004 Feb 18
7
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UAT series
001aaa270
10
I
R
I
R(25˚C)
(1)
1
−1
10
−100
−50
0
50
100
150
T (°C)
j
(1) PESD3V3S2UAT; VRWM = 3.3 V.
PESD5V0S2UAT; VRWM = 5 V.
IR is less than 10 nA at 150 °C for:
PESD12V52UAT; VRWM = 12 V.
PESD15VS2UAT; VRWM = 15 V.
PESD24VS2UAT; VRWM = 24 V.
Fig.8 Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
2004 Feb 18
8
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UAT series
ESD TESTER
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
R
Z
450 Ω
10×
ATTENUATOR
C
Z
50 Ω
note 1
Note 1: IEC61000-4-2 network
= 150 pF; R = 330 Ω
C
Z
Z
D.U.T.: PESDxS2UAT
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
PESD24VS2UAT
GND
GND
GND
GND
GND
PESD15VS2UAT
PESD12VS2UAT
PESD5V0S2L
GND
PESD3V3S2UAT
unclamped +1 kV ESD voltage waveform
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
(IEC61000-4-2 network)
GND
GND
vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
001aaa151
Fig.9 ESD clamping test set-up and waveforms.
9
2004 Feb 18
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UAT series
APPLICATION INFORMATION
The PESDxS2UAT series can protect up to two lines against damage caused by unidirectional ElectroStatic Discharge
(ESD) and surge pulses. The PESDxS2UAT series can protect lines whose signal polarities are below ground.
PESDxS2UAT series provide a surge capability of up to 330 Watts peak pulse power per line for a 8/20 µs waveform.
line 1 to be protected
line 2 to be protected
line 1 to be protected
PESDxS2UAT
ground
PESDxS2UAT
ground
unidirectional protection
of two lines
bidirectional protection
of one line
001aaa179
Fig.10 Typical application: ESD protection of data lines.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The
following guidelines are recommended:
1. Place the PESDxS2UAT as close as possible to the input terminal or connector.
2. Minimize the path length between the PESDxS2UAT and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of transient return paths to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible.
9. Use vias for multi-layer printed-circuit boards.
2004 Feb 18
10
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UAT series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2004 Feb 18
11
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UAT series
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Feb 18
12
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/01/pp13
Date of release: 2004 Feb 18
Document order number: 9397 750 12247
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