PESD5V0F1BLD [NXP]
TVS DIODE;
| 型号： | PESD5V0F1BLD |
| 厂家： | 
NXP |
| 描述： | TVS DIODE 局域网 光电二极管 电视 |
| 文件： | 总11页 (文件大小：354K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PESD5V0F1BLD
DFN1006D-2
Femtofarad bidirectional ESD protection diode
Rev. 1 — 23 July 2012
Product data sheet
1. Product profile
1.1 General description
Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode designed to
protect one signal line from the damage caused by ESD and other transients. The device
is encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted
Device (SMD) plastic package with visible and solderable side pads.
The combination of extremely low capacitance, high ESD maximum rating and ultra small
package makes the device ideal for high-speed data line protection and antenna
protection applications.
1.2 Features and benefits
Bidirectional ESD protection of one line ESD protection up to 10 kV
Femtofarad capacitance: Cd = 400 fF
IEC 61000-4-2; level 4 (ESD)
Package height typ. 0.37 mm
Low ESD clamping voltage: 30 V
at 30 ns and 8 kV
Very low leakage current: IRM < 1 nA
AEC-Q101 qualified
1.3 Applications
10/100/1000 Mbit/s Ethernet
FireWire
Portable electronics
Communication systems
Computers and peripherals
Audio and video equipment
Antenna protection
High-speed data lines
SIM card protection
Cellular handsets and accessories
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Per device
Conditions
Min
Typ
Max
Unit
VRWM
Cd
reverse standoff voltage
diode capacitance
-
-
-
5.5
V
f = 1 MHz; VR = 0 V
0.4
0.55
pF
PESD5V0F1BLD
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
2. Pinning information
Table 2.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
cathode (diode 1)
cathode (diode 2)
2
1
2
1
2
sym045
Transparent
top view
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PESD5V0F1BLD DFN1006D-2 leadless ultra small plastic package; 2 terminals; SOD882D
body 1 0.6 0.4 mm
4. Marking
Table 4.
Marking codes
Type number
Marking code
PESD5V0F1BLD
H
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
IPPM
Parameter
Conditions
Min
Max
Unit
[1]
rated peak pulse current
junction temperature
ambient temperature
storage temperature
tp = 8/20 s
-
2.5
A
Tj
-
125
C
C
C
Tamb
40
55
+125
+125
Tstg
[1] Device stressed with ten non-repetitive current pulses (8/20 s exponential decay waveform according to
IEC 61000-4-5 and IEC 61643-321).
PESD5V0F1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 July 2012
2 of 11
PESD5V0F1BLD
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
Table 6.
ESD maximum ratings
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Max Unit
Per device
[1]
[1]
VESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
-
-
-
10
10
10
kV
kV
kV
IEC 61000-4-2
(air discharge)
MIL-STD-883
(human body model)
[1] Device stressed with ten non-repetitive ESD pulses.
Table 7.
ESD standards compliance
Standard
Per device
Conditions
IEC 61000-4-2; level 4 (ESD)
> 8 kV (contact)
> 8 kV
MIL-STD-883; class 3B (human body model)
001aaa631
I
PP
001aaa630
120
100 %
90 %
100 % I ; 8 μs
PP
I
PP
(%)
80
−t
e
50 % I ; 20 μs
PP
40
10 %
t
t = 0.7 ns to 1 ns
r
0
30 ns
60 ns
0
10
20
30
40
t (μs)
Fig 1. 8/20 s pulse waveform according to
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
IEC 61000-4-5 and IEC 61643-321
PESD5V0F1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 July 2012
3 of 11
PESD5V0F1BLD
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
6. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Per device
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
-
-
5.5
V
IRM
VBR
Cd
reverse leakage current VRWM = 5 V
-
1
100
10
0.55
11
nA
V
breakdown voltage
diode capacitance
clamping voltage
IR = 1 mA
6
-
8
f = 1 MHz; VR = 0 V
IPP = 1 A
0.4
-
pF
V
[1]
[1]
[2]
VCL
-
IPPM = 2.5 A
IR = 10 A
-
-
15
-
V
rdyn
dynamic resistance
-
1.5
[1] Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANS/IESD STM5-1-2008.
I
PPM
006aab598
0.5
I
PP
C
d
(pF)
0.4
I
I
R
RM
-V -V
-V
RWM
CL
BR
-I
-I
V
V
V
RM
R
RWM BR CL
0.3
-
+
0.2
−6.0
-I
-I
PP
−2.0
2.0
6.0
V
(V)
006aab325
R
PPM
f = 1 MHz; Tamb = 25 C
Fig 3. Diode capacitance as a function of reverse
voltage; typical values
Fig 4. V-I characteristics for a bidirectional
ESD protection diode
PESD5V0F1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 July 2012
4 of 11
PESD5V0F1BLD
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
R
Z
450 Ω
10×
ATTENUATOR
C
Z
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 network
= 150 pF; R = 330 Ω
C
Z
Z
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
vertical scale = 50 V/div
horizontal scale = 15 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
GND
GND
vertical scale = 50 V/div
horizontal scale = 15 ns/div
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
006aab599
Fig 5. ESD clamping test setup and waveforms
PESD5V0F1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 July 2012
5 of 11
PESD5V0F1BLD
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
7. Application information
The device is designed for the protection of one bidirectional data or signal line from surge
pulses and ESD damage. The device is suitable on lines where the signal polarities are
both, positive and negative with respect to ground.
line to be protected
ESD protection diode
GND
aaa-002737
Fig 6. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0F1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 July 2012
6 of 11
PESD5V0F1BLD
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
9. Package outline
0.65
0.55
0.4
max
2
0.30
0.22
1.05
0.65
0.95
1
0.30
0.22
0.55
0.45
cathode marking on top side (if applicable)
12-05-01
Dimensions in mm
Fig 7. Package outline DFN1006D-2 (SOD882D)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
10000
PESD5V0F1BLD DFN1006D-2
(SOD882D)
2 mm pitch, 8 mm tape and reel
-315
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
1.4
0.2
solder lands
solder resist
solder paste
0.8
(2×)
0.6 0.7
(2×) (2×)
Dimensions in mm
0.3
0.4
1
1.3
sod882d_fr
Fig 8. Reflow soldering footprint DFN1006D-2 (SOD882D)
PESD5V0F1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 July 2012
7 of 11
PESD5V0F1BLD
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
12. Revision history
Table 10. Revision history
Document ID
Release date
20120723
Data sheet status
Change notice
Supersedes
PESD5V0F1BLD v.1
Product data sheet
-
-
PESD5V0F1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 July 2012
8 of 11
PESD5V0F1BLD
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use in automotive applications — This NXP
13.2 Definitions
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PESD5V0F1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 July 2012
9 of 11
PESD5V0F1BLD
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PESD5V0F1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 July 2012
10 of 11
PESD5V0F1BLD
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Quality information . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 July 2012
Document identifier: PESD5V0F1BLD
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