PESD5V0L6US [NXP]
Low capacitance 6-fold ESD protection diode arrays; 低电容6倍的ESD保护二极管阵列
| 型号： | PESD5V0L6US |
| 厂家： | 
NXP |
| 描述： | Low capacitance 6-fold ESD protection diode arrays |
| 文件： | 总14页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PESD5V0L6UAS;
PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
Rev. 02 — 9 November 2004
Product data sheet
1. Product profile
1.1 General description
Low capacitance 6-fold ESD protection diode arrays in small plastic packages designed to
protect up to six transmission or data lines from the damage caused by ElectroStatic
Discharge (ESD) and other transients.
Table 1:
Product overview
Type number
Package
Name
Philips
PESD5V0L6UAS
PESD5V0L6US
TSSOP8
SO8
SOT505-1
SOT96-1
1.2 Features
■ ESD protection of up to six lines
■ Low diode capacitance
■ Max. peak pulse power: PPP = 35 W
■ Low clamping voltage: V(CL)R = 15 V
■ Ultra low leakage current: IRM = 8 nA
■ ESD protection of up to 20 kV
■ IEC 61000-4-2, level 4 (ESD)
■ IEC 61000-4-5 (surge); IPP = 2.5 A.
1.3 Applications
■ Computers and peripherals
■ Communication systems
■ Audio and video equipment
■ High speed data lines
■ Parallel ports.
1.4 Quick reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Min
Typ
-
Max
5
Unit
V
VRWM
Cd
reverse stand-off voltage
diode capacitance
-
-
VR = 0 V;
f = 1 MHz
16
19
pF
PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors
Low capacitance 6-fold ESD protection diode arrays
2. Pinning information
Table 3:
Discrete pinning
Pin
Description
Simplified outline
Symbol
TSSOP8
1
2
3
4
5
6
7
8
cathode 1
8
5
1
2
8
7
cathode 2
cathode 3
cathode 4
3
4
6
5
cathode 5
common anode
common anode
cathode 6
sym004
1
4
SO8
1
cathode 1
8
5
1
2
8
7
2
cathode 2
3
cathode 3
4
cathode 4
3
4
6
5
5
cathode 5
6
common anode
common anode
cathode 6
1
4
7
sym004
8
3. Ordering information
Table 4:
Ordering information
Type number
Package
Name
Description
Version
PESD5V0L6UAS
PESD5V0L6US
TSSOP8 plastic thin shrink small outline package; 8 leads; SOT505-1
body width 3 mm
SO8
plastic small outline package; 8 leads;
body width 3.9 mm
SOT96-1
4. Marking
Table 5:
Marking
Type number
PESD5V0L6UAS
PESD5V0L6US
Marking code
5V06U
5V06US
9397 750 13537
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 9 November 2004
2 of 14
PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors
Low capacitance 6-fold ESD protection diode arrays
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
PPP
Parameter
Conditions
Min
Max
Unit
[1] [2]
[1] [2]
peak pulse power
8/20 µs pulse
8/20 µs pulse
-
35
W
A
IPP
peak pulse current
junction temperature
ambient temperature
storage temperature
-
2.5
Tj
-
150
+150
+150
°C
°C
°C
Tamb
Tstg
−65
−65
[1] Non-repetitive current pulse 8/20 µs exponentially decay waveform according to IEC 61000-4-5;
see Figure 1.
[2] Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Table 7:
Symbol
ESD
ESD maximum ratings
Parameter
Conditions
Min
Max
Unit
[1] [2]
electrostatic discharge
capability
IEC 61000-4-2
(contact discharge)
-
20
kV
HBM MIL-STD883
-
10
kV
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
[2] Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Table 8:
ESD standards compliance
ESD Standard
Conditions
IEC 61000-4-2, level 4 (ESD); see Figure 2
HBM MIL-STD883, class 3
> 15 kV (air); > 8 kV (contact)
> 4 kV
9397 750 13537
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 9 November 2004
3 of 14
PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors
Low capacitance 6-fold ESD protection diode arrays
001aaa191
I
pp
001aaa630
120
100 %
90 %
100 % I ; 8 µs
pp
I
pp
(%)
80
−t
e
50 % I ; 20 µs
pp
40
10 %
t
t = 0.7 to 1 ns
r
0
30 ns
0
10
20
30
40
t (µs)
60 ns
Fig 1. 8/20 µs pulse waveform according to
Fig 2. ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2.
IEC 61000-4-5.
9397 750 13537
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 9 November 2004
4 of 14
PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors
Low capacitance 6-fold ESD protection diode arrays
6. Characteristics
Table 9:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Per diode
VRWM
Parameter
Conditions
Min
Typ
Max
Unit
reverse stand-off voltage
reverse leakage current
clamping voltage
-
-
5
V
IRM
VRWM = 5 V
IPP = 1 A
-
8
25
10
15
7.2
100
19
nA
V
[1] [2]
[1] [2]
V(CL)R
-
-
IPP = 2.5 A
IR = 1 mA
IR = 1 mA
-
-
V
V(BR)
rdif
breakdown voltage
differential resistance
diode capacitance
6.4
6.8
-
V
-
-
Ω
pF
Cd
VR = 0 V; f = 1 MHz;
see Figure 5
16
[1] Non-repetitive current pulse 8/20 µs exponentially decay waveform according to IEC 61000-4-5; see Figure 1.
[2] Measured between each cathode on pins 1, 2, 3, 4, 5 or 8 and anode on pin 6 or 7.
9397 750 13537
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 9 November 2004
5 of 14
PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors
Low capacitance 6-fold ESD protection diode arrays
001aaa192
001aaa193
2
10
1.2
P
pp
P
pp(25˚C)
P
pp
(W)
0.8
10
0.4
1
0
2
3
4
1
10
10
10
10
0
50
100
150
200
t
(µs)
T (°C)
j
p
Tamb = 25 °C.
Fig 3. Peak pulse power as a function of exponential
pulse duration tp; typical values.
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values.
001aaa194
001aaa195
18
10
C
d
(pF)
16
I
RM
I
RM(25˚C)
14
12
10
8
1
−1
10
0
1
2
3
4
5
−100
−50
0
50
100
150
V
(V)
T (°C)
j
R
Tamb = 25 °C; f = 1 MHz.
Fig 5. Diode capacitance as a function of reverse
voltage; typical values.
Fig 6. Relative variation of reverse leakage current as
a function of junction temperature; typical
values.
9397 750 13537
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 9 November 2004
6 of 14
PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors
Low capacitance 6-fold ESD protection diode arrays
ESD TESTER
RG 223/U
50 Ω coax
4 GHz DIGITIZING
OSCILLOSCOPE
R
Z
450 Ω
10×
ATTENUATOR
C
Z
50 Ω
IEC61000-4-2 network
= 150 pF; R = 330 Ω
C
Z
Z
DUT: PESD5V0L6UAS
PESD5V0L6US
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
GND
GND
vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
006aaa064
Fig 7. ESD clamping test set-up and waveforms.
9397 750 13537
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 9 November 2004
7 of 14
PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors
Low capacitance 6-fold ESD protection diode arrays
7. Application information
The PESD5V0L6UAS and the PESD5V0L6US are designed for protection of up to six
unidirectional data lines from the damage caused by ElectroStatic Discharge (ESD) and
surge pulses. The PESD5V0L6UAS and the PESD5V0L6US may be used on lines where
the signal polarity is above or below ground.
The PESD5V0L6UAS and the PESD5V0L6US provide a surge capability of 35 W per line
for a 8/20 µs waveform.
high speed
data lines
PESD5V0L6UAS
PESD5V0L6US
PESD5V0L6UAS
PESD5V0L6US
n.c.
n.c.
unidirectional protection of 6 lines
bidirectional protection of 5 lines
006aaa065
Fig 8. Typical application for ESD protection of data lines.
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, EFT and surge transients. The
following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protection conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
9397 750 13537
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 9 November 2004
8 of 14
PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors
Low capacitance 6-fold ESD protection diode arrays
8. Package outline
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm
SOT505-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
A
(A )
2
A
3
A
1
pin 1 index
θ
L
p
L
1
4
detail X
e
w M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(2)
(1)
A
A
A
b
c
D
E
e
H
E
L
L
p
UNIT
v
w
y
Z
θ
1
2
3
p
max.
0.15
0.05
0.95
0.80
0.45
0.25
0.28
0.15
3.1
2.9
3.1
2.9
5.1
4.7
0.7
0.4
0.70
0.35
6°
0°
mm
1.1
0.65
0.25
0.94
0.1
0.1
0.1
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-04-09
03-02-18
SOT505-1
Fig 9. Package outline SOT505-1 (TSSOP8).
9397 750 13537
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 9 November 2004
9 of 14
PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors
Low capacitance 6-fold ESD protection diode arrays
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.05
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-27
03-02-18
SOT96-1
076E03
MS-012
Fig 10. Package outline SOT96-1 (SO8/MS-012).
9397 750 13537
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 9 November 2004
10 of 14
PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors
Low capacitance 6-fold ESD protection diode arrays
9. Packing information
Table 10: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
Package
Description
Packing quantity
1000
-
2500
PESD5V0L6UAS
PESD5V0L6US
SOT505-1
SOT96-1
8 mm pitch, 12 mm tape and reel
8 mm pitch, 12 mm tape and reel
-118
-118
-115
[1] For further information and the availability of packing methods, see Section 14.
9397 750 13537
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 9 November 2004
11 of 14
PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors
Low capacitance 6-fold ESD protection diode arrays
10. Revision history
Table 11: Revision history
Document ID
Release date Data sheet status
Change notice Order number
Supersedes
PESD5V06UAS_US_2 20041109
Product data sheet
-
9297 750 13537 PESD5V0L6US_1
Modifications:
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
• PESD5V0L6UAS added
• Table 1: product overview added
• Section 9: packing information added
PESD5V0L6US_1
20040315
Product specification
-
9397 750 12248
-
9397 750 13537
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 9 November 2004
12 of 14
PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors
Low capacitance 6-fold ESD protection diode arrays
11. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 13537
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 9 November 2004
13 of 14
PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors
Low capacitance 6-fold ESD protection diode arrays
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
12
13
14
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 9 November 2004
Document order number: 9397 750 13537
Published in The Netherlands
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