PESD5V0U4BF [NXP]
Ultra low capacitance bidirectional quadruple ESD protection arrays; 超低电容双向四重ESD保护阵列
| 型号： | PESD5V0U4BF |
| 厂家： | 
NXP |
| 描述： | Ultra low capacitance bidirectional quadruple ESD protection arrays |
| 文件： | 总12页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD
protection arrays
Rev. 01 — 15 August 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional quadruple ElectroStatic Discharge (ESD) protection
arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect
up to four signal lines from the damage caused by ESD and other transients.
Table 1.
Product overview
Type number
Package
NXP
Package configuration
JEDEC
MO-252
-
PESD5V0U4BF
PESD5V0U4BW
SOT886
SOT665
leadless ultra small
ultra small and flat lead
1.2 Features
I Bidirectional ESD protection of up to
I ESD protection up to 10 kV
four lines
I Ultra low diode capacitance: Cd = 2.9 pF I IEC 61000-4-2; level 4 (ESD)
I Ultra low leakage current: IRM = 5 nA
I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Portable electronics
I Subscriber Identity Module (SIM) card
protection
I Cellular handsets and accessories
I 10/100/1000 Mbit/s Ethernet
I Communication systems
I FireWire
I High-speed data lines
PESD5V0U4BF; PESD5V0U4BW
NXP Semiconductors
Ultra low capacitance bidirectional quadruple ESD protection arrays
1.4 Quick reference data
Table 2.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max
Unit
VRWM
Cd
reverse standoff voltage
diode capacitance
-
-
-
5
V
f = 1 MHz; VR = 0 V
2.9
3.5
pF
2. Pinning information
Table 3.
Pin
Pinning
Description
Simplified outline
Graphic symbol
PESD5V0U4BF
1
2
3
4
5
6
cathode (diode 1)
1
2
3
common cathode
cathode (diode 2)
cathode (diode 3)
common cathode
cathode (diode 4)
1
2
3
6
5
4
6
5
4
006aab333
bottom view
PESD5V0U4BW
1
2
3
4
5
cathode (diode 1)
5
4
3
common cathode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
1
2
3
5
4
1
2
006aab334
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PESD5V0U4BF
PESD5V0U4BW
XSON6
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1 × 1.45 × 0.5 mm
-
plastic surface-mounted package; 5 leads
SOT665
PESD5V0U4BF_PESD5V0U4BW_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2008
2 of 12
PESD5V0U4BF; PESD5V0U4BW
NXP Semiconductors
Ultra low capacitance bidirectional quadruple ESD protection arrays
4. Marking
Table 5.
Marking codes
Type number
Marking code
PESD5V0U4BF
PESD5V0U4BW
B1
A6
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
Tj
Parameter
Conditions
Min
Max
Unit
junction temperature
ambient temperature
storage temperature
-
150
°C
°C
°C
Tamb
−55
−65
+150
+150
Tstg
Table 7.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Max Unit
[1]
[2]
VESD
electrostatic discharge voltage
PESD5V0U4BF
IEC 61000-4-2
(contact discharge)
-
-
-
-
10
10
8
kV
kV
kV
kV
[3]
[2]
[3]
PESD5V0U4BW
PESD5V0U4BF
PESD5V0U4BW
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
MIL-STD-883 (human
body model)
8
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3] Measured from pin 1, 3, 4 or 5 to pin 2.
PESD5V0U4BF_PESD5V0U4BW_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2008
3 of 12
PESD5V0U4BF; PESD5V0U4BW
NXP Semiconductors
Ultra low capacitance bidirectional quadruple ESD protection arrays
Table 8.
ESD standards compliance
Conditions
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
> 4 kV
MIL-STD-883; class 3 (human body model)
001aaa631
I
PP
100 %
90 %
10 %
t
t = 0.7 ns to 1 ns
r
30 ns
60 ns
Fig 1. ESD pulse waveform according to IEC 61000-4-2
PESD5V0U4BF_PESD5V0U4BW_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2008
4 of 12
PESD5V0U4BF; PESD5V0U4BW
NXP Semiconductors
Ultra low capacitance bidirectional quadruple ESD protection arrays
6. Characteristics
Table 9.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
-
-
5
V
voltage
IRM
VBR
Cd
reverse leakage current VRWM = 5 V
-
5
100
9.5
nA
V
breakdown voltage
diode capacitance
IR = 5 mA
f = 1 MHz
VR = 0 V
VR = 5 V
IR = 1 mA
5.5
6.5
-
-
-
2.9
1.9
-
3.5
-
pF
pF
Ω
rdif
differential resistance
100
006aab036
3.0
I
PP
C
d
(pF)
2.6
I
R
I
−V −V
CL
−V
RWM
RM
BR
−I
−I
V
V
V
RM
R
RWM BR CL
2.2
1.8
−
+
−I
PP
0
1
2
3
4
5
V
(V)
R
006aaa676
f = 1 MHz; Tamb = 25 °C
Fig 2. Diode capacitance as a function of reverse
voltage; typical values
Fig 3. V-I characteristics for a bidirectional
ESD protection diode
PESD5V0U4BF_PESD5V0U4BW_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2008
5 of 12
PESD5V0U4BF; PESD5V0U4BW
NXP Semiconductors
Ultra low capacitance bidirectional quadruple ESD protection arrays
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
R
Z
450 Ω
10×
ATTENUATOR
C
Z
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 network
= 150 pF; R = 330 Ω
C
Z
Z
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 10 V/div
horizontal scale = 100 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 10 A/div
horizontal scale = 15 ns/div
GND
GND
vertical scale = 10 V/div
horizontal scale = 100 ns/div
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
006aab037
Fig 4. ESD clamping test setup and waveforms
PESD5V0U4BF_PESD5V0U4BW_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2008
6 of 12
PESD5V0U4BF; PESD5V0U4BW
NXP Semiconductors
Ultra low capacitance bidirectional quadruple ESD protection arrays
7. Application information
The PESD5V0U4BF and the PESD5V0U4BW are designed for the protection of up to four
bidirectional data or signal lines from the damage caused by ESD and surge pulses. The
devices may be used on lines where the signal polarities are both, positive and negative
with respect to ground.
data- or transmission lines
DUT
1
2
3
6
5
4
006aab335
Fig 5. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0U4BF_PESD5V0U4BW_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2008
7 of 12
PESD5V0U4BF; PESD5V0U4BW
NXP Semiconductors
Ultra low capacitance bidirectional quadruple ESD protection arrays
9. Package outline
1.05
0.95
0.50
max
1.7
1.5
0.6
0.5
0.04
max
0.6
5
4
0.25
0.17
3
2
1
4
5
6
0.3
0.1
0.5
0.5
1.7 1.3
1.5 1.1
1.5
1.4
1
2
3
0.18
0.08
0.27
0.17
0.5
0.40
0.32
0.35
0.27
1
Dimensions in mm
04-07-22
Dimensions in mm
04-11-08
Fig 6. Package outline PESD5V0U4BF (SOT886)
Fig 7. Package outline PESD5V0U4BW (SOT665)
10. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package Description
Packing quantity
4000 5000 8000
[2]
[3]
PESD5V0U4BF SOT886 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T4
-
-115
-
-
-132
-
PESD5V0U4BW SOT665 2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
-
-
-
-315
-
-115
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T4: 90° rotated reverse taping
PESD5V0U4BF_PESD5V0U4BW_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2008
8 of 12
PESD5V0U4BF; PESD5V0U4BW
NXP Semiconductors
Ultra low capacitance bidirectional quadruple ESD protection arrays
11. Soldering
1.250
0.675
0.370
(6×)
0.500
1.700
solder lands
0.500
solder paste
0.270
(6×)
occupied area
Dimensions in mm
0.325
0.425
(6×)
(6×)
sot886_fr
Reflow soldering is the only recommended soldering method.
Fig 8. Reflow soldering footprint PESD5V0U4BF (SOT886)
2.45
2.1
1.6
solder lands
0.4
0.7
(5×)
(2×)
placement area
1
0.25 0.3 0.55
2
solder paste
0.45 0.4
(2×) (2×)
0.538
occupied area
0.325 0.375
(2×) (2×)
Dimensions in mm
1.7
0.6
0.45
(4×)
0.65
0.5
(4×)
sot665_fr
Reflow soldering is the only recommended soldering method.
Fig 9. Reflow soldering footprint PESD5V0U4BW (SOT665)
PESD5V0U4BF_PESD5V0U4BW_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2008
9 of 12
PESD5V0U4BF; PESD5V0U4BW
NXP Semiconductors
Ultra low capacitance bidirectional quadruple ESD protection arrays
12. Revision history
Table 11. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESD5V0U4BF_PESD5V0U4BW_1 20080815
Product data sheet
-
-
PESD5V0U4BF_PESD5V0U4BW_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2008
10 of 12
PESD5V0U4BF; PESD5V0U4BW
NXP Semiconductors
Ultra low capacitance bidirectional quadruple ESD protection arrays
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Applications — Applications that are described herein for any of these
13.2 Definitions
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
ESD protection devices — These products are only intended for protection
against ElectroStatic Discharge (ESD) pulses and are not intended for any
other usage including, without limitation, voltage regulation applications. NXP
Semiconductors accepts no liability for use in such applications and therefore
such use is at the customer’s own risk.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PESD5V0U4BF_PESD5V0U4BW_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2008
11 of 12
PESD5V0U4BF; PESD5V0U4BW
NXP Semiconductors
Ultra low capacitance bidirectional quadruple ESD protection arrays
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
Quality information . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 August 2008
Document identifier: PESD5V0U4BF_PESD5V0U4BW_1
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