PHC21025T/R [NXP]
TRANSISTOR 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal;型号: | PHC21025T/R |
厂家: | NXP |
描述: | TRANSISTOR 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
文件: | 总16页 (文件大小:240K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PHC21025
SO8
Complementary intermediate level FET
Rev. 04 — 17 March 2011
Product data sheet
1. Product profile
1.1 General description
Intermediate level N-channel and P-channel complementary pair enhancement mode
Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This
product is designed and qualified for use in computing, communications, consumer and
industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
Suitable for high frequency
applications due to fast switching
characteristics
on-state resistance
1.3 Applications
Motor and actuator drivers
Power management
Synchronized rectification
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 150 °C;
-
-
30
V
N-channel
Tj ≥ 25 °C; Tj ≤ 150 °C;
-
-
-30
V
P-channel
ID
drain current
Tsp ≤ 80 °C; P-channel
Tsp ≤ 80 °C; N-channel
-
-
-
-
-
-
-2.3
3.5
1
A
A
[1]
Ptot
total power dissipation Tamb = 25 °C
W
Static characteristics
RDSon drain-source on-state VGS = -10 V; ID = -1 A;
-
-
0.22 0.25
0.08 0.1
Ω
Ω
resistance
Tj = 25 °C; P-channel;
see Figure 16; see Figure 19
VGS = 10 V; ID = 2.2 A;
Tj = 25 °C; N-channel;
see Figure 15; see Figure 18
PHC21025
NXP Semiconductors
Complementary intermediate level FET
Table 1.
Symbol
Dynamic characteristics
QGD gate-drain charge
Quick reference data …continued
Parameter Conditions
Min Typ Max Unit
VGS = -10 V; ID = -2.3 A;
VDS = -15 V; Tj = 25 °C;
P-channel; see Figure 12
-
-
3
-
-
nC
nC
V
V
GS = 10 V; ID = 2.3 A;
DS = 15 V; Tj = 25 °C;
2.5
N-channel; see Figure 11
[1] Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a
thermal resistance from ambient to solder point of 90 K/W.
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
S1
G1
S2
G2
D2
D2
D1
D1
source1
gate1
8
5
4
D1 D1 D2 D2
2
3
source2
gate2
4
5
drain2
drain2
drain1
drain1
1
S1 G1 S2 G2
sym114
6
SOT96-1 (SO8)
7
8
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
SO8
Description
Version
PHC21025
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
PHC21025
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
2 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
30
Unit
V
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 150 °C; N-channel
Tj ≥ 25 °C; Tj ≤ 150 °C; P-channel
-
-
-30
-
V
VGS
VGSO
ID
gate-source voltage
gate-source voltage
drain current
-
V
open drain
-20
20
V
Tsp ≤ 80 °C; P-channel
Tsp ≤ 80 °C; N-channel
-
-
-
-2.3
3.5
14
A
A
[1]
[1]
IDM
peak drain current
Tsp = 25 °C; pulsed; N-channel;
see Figure 2
A
Tsp = 25 °C; pulsed; P-channel;
see Figure 3
-
-10
A
[2]
[3]
[4]
[5]
Ptot
total power dissipation
Tamb = 25 °C
-
1
W
W
W
W
°C
°C
Tsp = 80 °C; see Figure 1
Tamb = 25 °C
-
2
-
1.3
2
-
Tstg
Tj
storage temperature
junction temperature
-65
-
150
150
Source-drain diode
IS
source current
Tsp ≤ 80 °C; P-channel
-
-
-
-
-1.25
1.5
-5
A
A
A
A
Tsp ≤ 80 °C; N-channel
[6]
[6]
ISM
peak source current
Tsp = 25 °C; pulsed; P-channel
Tsp = 25 °C; pulsed; N-channel
6
[1] Pulse width and duty cycle limited by maximum junction temperature.
[2] Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a thermal resistance from ambient to
solder point of 90 K/W.
[3] Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time.
[4] Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with thermal resistance
from ambient to solder point of 90 K/W.
[5] Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a Thermal resistance from ambient
to solder point of 27.5 K/W.
[6] Pulse width and duty cycle limited by maximum junction temperature.
PHC21025
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
3 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
mlb836
mlb833
2
2.5
10
P
tot
I
D
(W)
2.0
(A)
(1)
10
t
p
=
10μs
1.5
1.0
0.5
0
1
1 ms
t
p
P
δ =
T
DC
0.1 s
−1
10
10
t
t
p
T
−2
10
−1
2
0
50
100
150
200
10
1
10
V
DS
(V)
T
s
(°C)
δ = 0.01.
Ts = 80 °C.
(1) RDSon limitation.
Fig 1. Power derating curve
Fig 2. SOAR; N-channel
mbe155
2
−10
I
D
(A)
−10
t
p
=
(1)
10 μs
−1
1 ms
t
p
P
δ =
−1
T
DC
0.1 s
−1
−10
t
t
p
T
−2
−10
−10
−1
2
−10
−10
V
DS
(V)
δ = 0.01
Ts = 80 °C.
(1) RDSon limitation.
Fig 3. SOAR; P-channel
PHC21025
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
4 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to solder
point
-
-
35
K/W
mbe152
2
10
R
(K/W)
th j-s
δ =
0.75
0.5
0.33
10
0.2
0.1
0.05
t
p
P
1
δ =
0.02
0.01
T
0
t
t
p
T
p
−1
10
10
−6
−5
−4
−3
−2
−1
10
10
10
10
10
1
t
(s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
PHC21025
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
5 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown
voltage
ID = -10 µA; VGS = 0 V; Tj = 25 °C;
P-channel
-30
-
-
V
ID = 10 µA; VGS = 0 V; Tj = 25 °C;
N-channel
30
-1
1
-
-
-
V
gate-source threshold voltage ID = -1 mA; VDS = VGS; Tj = 25 °C;
P-channel; see Figure 17
-
-2.8
2.8
-100
100
100
100
100
100
0.25
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
N-channel; see Figure 17
-
V
drain leakage current
gate leakage current
VDS = -24 V; VGS = 0 V; Tj = 25 °C;
P-channel
-
nA
nA
nA
nA
nA
nA
Ω
VDS = 24 V; VGS = 0 V; Tj = 25 °C;
-
-
N-channel
IGSS
VGS = 20 V; VDS = 0 V; Tj = 25 °C;
N-channel
-
-
VGS = 20 V; VDS = 0 V; Tj = 25 °C;
P-channel
-
-
VGS = -20 V; VDS = 0 V; Tj = 25 °C;
-
-
P-channel
VGS = -20 V; VDS = 0 V; Tj = 25 °C;
N-channel
-
-
RDSon
drain-source on-state
resistance
VGS = -10 V; ID = -1 A; Tj = 25 °C;
P-channel; see Figure 16;
see Figure 19
-
0.22
VGS = 10 V; ID = 2.2 A; Tj = 25 °C;
N-channel; see Figure 15;
see Figure 18
-
-
-
0.08
0.33
0.11
0.1
0.4
0.2
Ω
Ω
Ω
VGS = -4.5 V; ID = -0.5 A; Tj = 25 °C;
P-channel; see Figure 16;
see Figure 19
VGS = 4.5 V; ID = 1 A; N-channel;
see Figure 15; see Figure 18
IDSon
on-state drain current
VDS = 5 V; VGS = 4.5 V; N-channel
VDS = -5 V; VGS = -4.5 V; P-channel
VDS = -1 V; VGS = -10 V; P-channel
VDS = 1 V; VGS = 10 V; N-channel
2
-
-
-
-
-
-
-
-
A
A
A
A
-1
-2.3
3.5
Dynamic characteristics
QG(tot)
total gate charge
ID = 2.3 A; VDS = 15 V; VGS = 10 V;
Tj = 25 °C; N-channel;
see Figure 11
-
-
10
10
30
25
nC
nC
ID = -2.3 A; VDS = -15 V;
VGS = -10 V; Tj = 25 °C; P-channel;
see Figure 12
PHC21025
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
6 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
Table 6.
Symbol
QGS
Characteristics …continued
Parameter
Conditions
Min
Typ
Max
Unit
gate-source charge
ID = 2.3 A; VDS = 15 V; VGS = 10 V;
Tj = 25 °C; N-channel;
see Figure 11
-
1
-
nC
ID = -2.3 A; VDS = -15 V;
-
-
-
1
-
-
-
nC
nC
nC
VGS = -10 V; Tj = 25 °C; P-channel;
see Figure 12
QGD
gate-drain charge
ID = -2.3 A; VDS = -15 V;
VGS = -10 V; Tj = 25 °C; P-channel;
see Figure 12
3
ID = 2.3 A; VDS = 15 V; VGS = 10 V;
Tj = 25 °C; N-channel;
see Figure 11
2.5
Ciss
Coss
Crss
gfs
input capacitance
output capacitance
reverse transfer capacitance
transfer conductance
turn-off time
VDS = 20 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; N-channel; see Figure 5
-
250
250
140
140
50
-
pF
pF
pF
pF
pF
pF
S
VDS = -20 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; P-channel; see Figure 6
-
-
VDS = 20 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; N-channel; see Figure 5
-
-
VDS = -20 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; P-channel; see Figure 6
-
-
VDS = 20 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; N-channel; see Figure 5
-
-
VDS = -20 V; VGS = 0 V; f = 1 MHz;
-
50
-
Tj = 25 °C; P-channel; see Figure 6
VDS = -20 V; ID = -1 A; Tj = 25 °C;
P-channel
1
2
-
2
-
VDS = 20 V; ID = 2.2 A; Tj = 25 °C;
4.5
25
-
S
N-channel
toff
VDS = 20 V; VGS = 10 V;
140
ns
RG(ext) = 4.7 Ω; ID = 1 A; RL = 20 Ω;
Tj = 25 °C; N-channel
V
DS = -20 V; VGS = -10 V;
-
-
50
20
140
80
ns
ns
RG(ext) = 4.7 Ω; ID = -1 A; RL = 20 Ω;
Tj = 25 °C; P-channel
ton
turn-on time
VDS = 20 V; VGS = 10 V;
-
15
40
ns
RG(ext) = 4.7 Ω; ID = 1 A; RL = 20 Ω;
Tj = 25 °C; N-channel
Source-drain diode
VSD source-drain voltage
IS = 1.25 A; VGS = 0 V; Tj = 25 °C;
N-channel; see Figure 13
-
-
-
-
1.2
V
IS = -1.25 A; VGS = 0 V; Tj = 25 °C;
P-channel; see Figure 14
-
-1.6
200
V
trr
reverse recovery time
IS = -1.25 A; dIS/dt = 100 A/µs;
VGS = 0 V; VDS = -25 V; Tj = 25 °C;
P-channel
150
ns
IS = 1.25 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 25 V; Tj = 25 °C;
N-channel
-
35
100
ns
PHC21025
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
7 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
mbe137
mbe144
600
600
C
(pF)
C
(pF)
400
400
C
iss
C
iss
200
200
C
oss
C
oss
C
rss
C
rss
0
0
0
10
20
30
0
−10
−20
−30
V
DS
(V)
V
DS
(V)
Fig 5. Capacitance as a function of drain-source
voltage; N-channel; typical values
Fig 6. Capacitance as a function of drain-source
voltage; P-channel; typical values
mbe142
mbe154
−10
16
V
V
=
GS
=
GS
I
−6 V
I
D
−10 V
−7.5 V
10 V 6 V
D
(A)
(A)
−8
12
5 V
−5 V
−6
−4
−2
0
8
4
0
4.5 V
4 V
−4.5 V
−4 V
−3.5 V
3.5 V
3 V
−3 V
−2.5 V
0
−2
−4
−6
−8
−10
V
−12
(V)
0
2
4
6
8
10
V
12
(V)
DS
DS
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; N-channel;
typical values
Fig 8. Output characteristics: drain current as a
function of drain-source voltage; P-channel;
typical values
PHC21025
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
8 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
mbe157
mbe141
−10
16
I
I
D
D
(A)
(A)
−8
12
−6
8
4
0
−4
−2
0
0
−2
−4
−6
−8
0
2
4
6
8
V
GS
(V)
V
GS
(V)
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; N-channel;
typical values
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; P-channel;
typical values
mbe145
mbe136
10
−10
V
V
GS
GS
(V)
8
(V)
−8
6
4
−6
−4
2
0
−2
0
0
2
4
6
8
0
−2
−4
−6
−8
−10
(nC)
Q
G
(nC)
Q
g
Fig 11. Gate-source voltage as a function of gate
charge; N-channel; typical values
Fig 12. Gate-source voltage as a function of gate
charge; P-channel; typical values
PHC21025
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
9 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
mbe158
mbe159
6
−6
I
S
I
S
(A)
(A)
4
−4
(1)
(2)
(3)
(1)
(2)
(3)
2
0
−2
0
0
0.5
1
1.5
0
−0.5
−1
−1.5
−2
V
SD
(V)
V
SD
(V)
VGD = 0.
VGD = 0.
(1) Tj = 150 °C.
(2) Tj = 25 °C.
(3) Tj = -55 °C.
(1) Tj = 150 °C.
(2) Tj = 25 °C.
(3) Tj = -55 °C.
Fig 13. Source current as a function of source-drain
voltage; N-channel; typical values
Fig 14. Source current as a function of source-drain
voltage; P-channel; typical values
mda217
mda165
4
4
10
10
R
DSon
(mΩ)
R
DSon
(1)(2)(3)(4)(5)(6)
(mΩ)
(1)(2)(3)(4) (5)
3
10
3
10
2
10
2
10
10
0
2
4
6
8
10
(V)
0
−2
−4
−6
−8
V
−10
(V)
V
GS
GS
V
DS ≥ ID x RDSon; Tj = 25 °C.
-VDS ≥ -ID x RDSon; Tj = 25 °C.
(1) ID = -0.1 A.
(1) ID = 0.1 A.
(2) ID = 0.5 A.
(3) ID = 1 A.
(2) ID = -0.5 A.
(3) ID = -1 A.
(4) ID = 2.2 A.
(5) ID = 3.5 A.
(6) ID = 7 A.
(4) ID = -2.3 A.
(5) ID= -4.5 A.
Fig 15. Drain-source on-state resistance as a function
of drain current; N-channel; typical values
Fig 16. Drain-source on-state resistance as a function
of drain current; typical values
PHC21025
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
10 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
mbe138
mbe139
1.2
1.8
k
k
1.1
1.6
(1)
(2)
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.6
−50
−50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
Typical RDSon at:
Typical VGSth at ID = 1 mA; VDS = VGS = VGSth
.
(1) ID = 2.2 A; VGS = 10 V.
(2) ID = 1 A; VGS = 4.5 V.
Fig 17. Temperature coefficient of gate-source
threshold voltage
Fig 18. Temperature coefficient of drain-source
on-state resistance; N-channel
mbe146
1.8
k
1.6
(1)
(2)
1.4
1.2
1.0
0.8
0.6
−50
0
50
100
150
T (°C)
j
Typical RDSon at:
(1) ID = -1 A; VGS = -10 V.
(2) ID = -0.5 A; VGS = -4.5 V.
Fig 19. Temperature coefficient of drain-source on-state resistance; P-channel
PHC21025
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
11 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
7. Package outline
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.05
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-27
03-02-18
SOT96-1
076E03
MS-012
Fig 20. Package outline SOT96-1 (SO8)
PHC21025
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
12 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
8. Revision history
Table 7.
Revision history
Document ID
PHC21025 v.4
Modifications:
PHC21025 v.3
Release date
Data sheet status
Change notice
Supersedes
20110317
Product data sheet
-
PHC21025 v.3
• Various changes to content.
20101217 Product data sheet
-
PHC21025 v.2
PHC21025
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
13 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
9. Legal information
9.1 Data sheet status
Document status [1] [2]
Product status [3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
9.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
PHC21025
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
14 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
non-automotive qualified products in automotive equipment or applications.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PHC21025
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2011
15 of 16
PHC21025
NXP Semiconductors
Complementary intermediate level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 March 2011
Document identifier: PHC21025
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