PHP109/T3 [NXP]
TRANSISTOR 5 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power;
| 型号： | PHP109/T3 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 5 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PHP109
P-channel enhancement mode
MOS transistor
1997 Jun 18
Product specification
Supersedes data of 1996 Jun 11
File under Discrete Semiconductors, SC13b
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
FEATURES
PINNING - SO8 (SOT96-1)
• High-speed switching
• No secondary breakdown
• Very low on-resistance.
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
7
8
n.c.
s
not connected
source
source
gate
s
APPLICATIONS
g
d
drain
drain
drain
drain
• Motor and actuator driver
• Power management
d
d
• Synchronized rectification.
d
DESCRIPTION
P-channel enhancement mode MOS transistor in an 8-pin
plastic SO8 (SOT96-1) package.
d
d
d
d
handbook, halfpage
8
5
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
1
4
n.c. s
s
g
MAM115
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
−30
UNIT
VDS
VSD
VGS
VGSth
ID
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
−
−
−
V
V
V
V
A
Ω
IS = −1.25 A
−1.3
±20
−2.8
−5
ID = −1 mA; VDS = VGS
Ts = 80 °C
−1
−
RDSon
Ptot
drain-source on-state resistance
total power dissipation
ID = −2.5 A; VGS = −10 V
Ts = 80 °C
−
0.09
4
−
W
1997 Jun 18
2
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
drain-source voltage (DC)
CONDITIONS
MIN.
MAX.
−30
UNIT
VDS
VGS
ID
−
−
−
−
−
−
−
V
V
A
A
gate-source voltage (DC)
drain current (DC)
±20
−5
Ts = 80 °C; note 1
note 2
IDM
Ptot
peak drain current
−20
4
total power dissipation
Ts = 80 °C
W
W
W
°C
°C
T
amb = 25 °C; note 3
amb = 25 °C; note 4
2.7
T
1.15
+150
+150
Tstg
Tj
storage temperature
−65
−65
operating junction temperature
Source-drain diode
IS
source current (DC)
peak pulsed source current
Ts = 80 °C
−
−
−3
A
A
ISM
note 2
−12
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Value based on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 27.5 K/W.
4. Value based on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 90 K/W.
MGD381
MGD382
2
10
−10
handbook, halfpage
handbook, halfpage
P
tot
(W)
I
D
(A)
8
t
p =
10 µs
−10
(1)
100 µs
6
4
2
1 ms
DC
δ =
10 ms
t
p
−1
P
T
100 ms
t
t
p
T
−1
0
0
−10
−10
50
100
150
200
−1
2
o
−1
−10
−10
T
( C)
s
V
(V)
DS
δ = 0.01; TS = 80 °C.
(1) RDSon limitation
.
Fig.2 Power derating curve.
Fig.3 SOAR.
1997 Jun 18
3
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
VALUE
UNIT
thermal resistance from junction to soldering point
17.5
K/W
MGD392
2
10
R
th j-s
(K/W)
δ =
0.75
10
0.5
0.33
0.2
0.1
1
−1
−2
0.05
0.02
0.01
t
p
P
δ =
T
10
10
0
t
t
p
T
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t
(s)
p
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1997 Jun 18
4
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−30
TYP.
MAX. UNIT
V(BR)DSS drain-source breakdown voltage
VGS = 0; ID = −10 µA
VGS = VDS; ID = −1 mA
VGS = 0; VDS = −24 V
VGS = ±20 V; VDS = 0
VGS = −4.5 V; ID = −1.25 A
−
−
V
VGSth
IDSS
gate-source threshold voltage
drain-source leakage current
gate leakage current
−1
−
−
−2.8
−100
±100
0.15
0.09
−
V
−
nA
nA
Ω
IGSS
−
−
RDSon
drain-source on-state resistance
−
−
V
GS = −10 V; ID = −2.5 A
−
−
Ω
Ciss
Coss
Crss
QG
input capacitance
VGS = 0; VDS = −24 V; f = 1 MHz
VGS = 0; VDS = −24 V; f = 1 MHz
VGS = 0; VDS = −24 V; f = 1 MHz
−
825
350
150
30
pF
pF
pF
nC
output capacitance
reverse transfer capacitance
total gate charge
−
−
−
−
VGS = −10 V; VDD = −15 V;
ID = −2.5 A
−
40
QGS
QGD
gate-source charge
gate-drain charge
VGS = −10 V; VDD = −15 V;
ID = −2.5 A
−
−
3
−
−
nC
nC
VGS = −10 V; VDD = −15 V;
ID = −2.5 A
12
Switching times (see Fig.11)
td(on)
tf
turn-on delay time
fall time
VGS = 0 to −10 V; VDD = −15 V;
ID = −1 A; RL = 15 Ω; Rgen = 6 Ω
−
−
−
−
−
−
7
−
ns
ns
ns
ns
ns
ns
10
17
60
40
100
−
ton
turn-on switching time
turn-off delay time
rise time
35
−
td(off)
tr
VGS = −10 to 0 V; VDD = −15 V;
ID = −1 A; RL = 15 Ω; Rgen = 6 Ω
−
toff
turn-off switching time
200
Source-drain diode
VSD
trr
source-drain forward voltage
reverse recovery time
VGD = 0; IS = −1.25 A
−
−
−
−1.3
V
IS = −1.25 A; di/dt = 100 A/µs
70
−
ns
1997 Jun 18
5
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
MGD386
MGD384
−10
−24
handbook, halfpage
handbook, halfpage
I
D
(A)
−20
V
GS
(V)
−8
V
=
GS
−10 V
−7.5 V
−5 V
−16
−6
−4
−4 V
−12
−8
−3.5 V
−2
−4
−3 V
−2.5 V
0
0
0
0
−5
−10
−15
−20
−25
Q
−30
(nC)
−2
−4
−6
−8
−10
(V)
V
DS
g
VDD = −15 V: ID = −2.5 A.
Tj = 25 °C.
Fig.5 Gate-source voltage as a function of total
gate charge; typical values.
Fig.6 Output characteristics; typical values.
MGD387
MGD385
−20
−20
handbook, halfpage
handbook, halfpage
I
I
D
SD
(A)
(A)
−16
−16
−12
−8
−4
0
−12
−8
−4
(1) (2)
(3)
0
0
0
−2
−4
−6
−8
−0.4
−0.8
−1.2
−1.6
−2.0
V
−2.4
(V)
V
(V)
GS
SD
VGD = 0.
(1) Tj = 150 °C.
(2) Tj = 25 °C.
(3) Tj = −65 °C.
VDS = −10 V; Tj = 25 °C.
Fig.8 Source current as a function of source-drain
diode forward voltage; typical values.
Fig.7 Transfer characteristics; typical values.
1997 Jun 18
6
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
MGD383
MGD388
3
10
2500
handbook, halfpage
handbook, halfpage
(1)
(2)
(3)
C
(pF)
R
(4)
(5)
(6)
DSon
(mΩ)
2000
1500
1000
2
10
C
iss
500
C
oss
C
rss
0
0
10
0
−2
−4
−6
−8
V
−10
(V)
−8
−16
−24
V
(V)
DS
GS
VDS ≥ ID × RDSon; Tj = 25 °C.
(1) ID = −100 mA.
(2) ID = −500 mA.
(3) ID = −1.25 A.
(4) ID = −2.5 A.
(5) ID = −5 A.
(6) ID = −7 A.
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.9 Drain source on-state resistance as a
function of gate-source voltage; typical
values.
Fig.10 Capacitance as a function of drain-source
voltage; typical values.
0
10 %
−V
DD
V
in
90 %
R
L
V
0
out
10 %
10 %
V
out
V
in
90 %
90 %
t
t
d(on)
t
d(off)
t
t
t
f
r
MGD391
on
off
Fig.11 Switching times test circuit and input and output waveforms.
7
1997 Jun 18
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
MGD389
MGD390
1.4
1.8
handbook, halfpage
handbook, halfpage
k
k
(1)
(2)
1.2
1.4
1.0
0.8
0.6
1.0
0.6
−75
−75
−25
25
75
125
175
−25
25
75
125
175
o
o
T ( C)
T ( C)
j
j
RDSon at Tj
k =
-----------------------------------------
RDSon at 25 °C
VGSth at Tj
k =
--------------------------------------
RDSon at:
VGSth at 25°C
(1) VGS = −10 V; ID = −2.5 A.
(2) VGS = −4.5 V; ID = −1.25 A.
VGSth at VDS =VGS ; ID = −1 mA.
Fig.12 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; typical values.
Fig.13 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; typical values.
1997 Jun 18
8
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-02-04
97-05-22
SOT96-1
076E03S
MS-012AA
1997 Jun 18
9
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 18
10
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
NOTES
1997 Jun 18
11
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© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/00/02/pp12
Date of release: 1997 Jun 18
Document order number: 9397 750 02384
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