PHP11N50E [NXP]

PowerMOS transistors Avalanche energy rated; 功率MOS晶体管的额定雪崩能量


型号：	PHP11N50E
厂家：	NXP
描述：	PowerMOS transistors Avalanche energy rated 功率MOS晶体管的额定雪崩能量晶体晶体管
文件：	总7页 (文件大小：45K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Preliminary specification

PowerMOS transistors

Avalanche energy rated

PHP11N50E, PHB11N50E, PHW11N50E

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching

V_DSS= 500 V

• Stable off-state characteristics

• High thermal cycling performance

• Low thermal resistance

I_D= 10.4 A

R_DS(ON)≤ 0.6 Ω

GENERAL DESCRIPTION

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,

T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching

applications.

The PHP11N50E is supplied in the SOT78 (TO220AB) conventional leaded package.

The PHW11N50E is supplied in the SOT429 (TO247) conventional leaded package.

The PHB11N50E is supplied in the SOT404 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

SOT429 (TO247)

DESCRIPTION

tab

gate

drain¹

source

tab drain

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DSS

V_DGR

V_GS

I_D

Drain-source voltage

T_j= 25 ˚C to 150˚C

500

± 30

10.4

6.6

Drain-gate voltage

T_j= 25 ˚C to 150˚C; R_GS= 20 kΩ

Gate-source voltage

Continuous drain current

T_mb= 25 ˚C; V_GS= 10 V

T_mb= 100 ˚C; V_GS= 10 V

T_mb= 25 ˚C

I_DM

P_D

T_j, T_stg

Pulsed drain current

Total dissipation

Operating junction and

storage temperature range

T_mb= 25 ˚C

156

150

˚C

- 55

1 It is not possible to make connection to pin 2 of the SOT404 package.

January 1998

Rev 1.000

Philips Semiconductors

Preliminary specification

PowerMOS transistors

Avalanche energy rated

PHP11N50E, PHB11N50E, PHW11N50E

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E_AS

Non-repetitive avalanche

Unclamped inductive load, I_D= 10.4 A;

676

energy

V_DD≤ 50 V; starting T_j= 25˚C; R_GS= 50 Ω;

V_GS= 10 V

E_AR

I_AS, I_AR

Repetitive avalanche energy²

Repetitive and non-repetitive

avalanche current

16.9

10.4

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

Thermal resistance junction

to mounting base

0.8

K/W

R_{th j-a}

Thermal resistance junction SOT78 package, in free air

K/W

to ambient

SOT429 package, in free air

SOT404 package, pcb mounted, minimum

footprint

ELECTRICAL CHARACTERISTICS

T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_(BR)DSS

Drain-source breakdown

voltage

V_GS= 0 V; I_D= 0.25 mA

500

∆V_(BR)DSS/ Drain-source breakdown

∆T_j

V_DS= V_GS; I_D= 0.25 mA

0.1

%/K

voltage temperature

coefficient

Drain-source on resistance

Gate threshold voltage

Forward transconductance

R_DS(ON)

V_GS(TO)

g_fs

V_GS= 10 V; I_D= 5.2 A

V_DS= V_GS; I_D= 0.25 mA

V_DS= 30 V; I_D= 5.2 A

2.0

0.5

3.0

0.6

4.0

500

200

Ω

µA

I_DSS

Drain-source leakage current V_DS= 500 V; V_GS= 0 V

V_DS= 400 V; V_GS= 0 V; T_j= 125 ˚C

I_GSS

Gate-source leakage current V_GS= ±30 V; V_DS= 0 V

Q_g(tot)

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain (Miller) charge

I_D= 10.4 A; V_DD= 400 V; V_GS= 10 V

120

150

t_d(on)

t_r

t_d(off)

t_f

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

V_DD= 250 V; R_D= 22 Ω;

R_G= 5.6 Ω

145

L_d

Internal drain inductance

Measured from tab to centre of die

Measured from drain lead to centre of die

(SOT78 and SOT429 packages only)

Measured from source lead to source

bond pad

3.5

4.5

L_s

Internal source inductance

7.5

C_iss

C_oss

C_rss

Input capacitance

Output capacitance

Feedback capacitance

V_GS= 0 V; V_DS= 25 V; f = 1 MHz

1400

220

125

2 pulse width and repetition rate limited by T_jmax.

January 1998

Rev 1.000

Philips Semiconductors

Preliminary specification

PowerMOS transistors

Avalanche energy rated

PHP11N50E, PHB11N50E, PHW11N50E

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_S

Continuous source current

(body diode)

T_mb= 25˚C

10.4

I_SM

V_SD

Pulsed source current (body T_mb= 25˚C

diode)

Diode forward voltage

I_S= 10.4 A; V_GS= 0 V

1.2

t_rr

Q_rr

Reverse recovery time

Reverse recovery charge

I_S= 10.4 A; V_GS= 0 V; dI/dt = 100 A/µs

600

µC

January 1998

Rev 1.000

Philips Semiconductors

Preliminary specification

PowerMOS transistors

Avalanche energy rated

PHP11N50E, PHB11N50E, PHW11N50E

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

1 2 3

max

(2x)

0,9 max (3x)

0,6

2,4

2,54 2,54

Fig.1. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to mounting instructions for SOT78 (TO220) envelopes.

3. Epoxy meets UL94 V0 at 1/8".

January 1998

Rev 1.000

Philips Semiconductors

Preliminary specification

PowerMOS transistors

Avalanche energy rated

PHP11N50E, PHB11N50E, PHW11N50E

MECHANICAL DATA

Dimensions in mm

Net Mass: 1.4 g

4.5 max

1.4 max

10.3 max

11 max

15.4

2.5

0.85 max

(x2)

0.5

2.54 (x2)

Fig.2. SOT404 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS

Dimensions in mm

11.5

9.0

17.5

2.0

3.8

5.08

Fig.3. SOT404 : soldering pattern for surface mounting.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Epoxy meets UL94 V0 at 1/8".

January 1998

Rev 1.000

Philips Semiconductors

Preliminary specification

PowerMOS transistors

Avalanche energy rated

PHP11N50E, PHB11N50E, PHW11N50E

MECHANICAL DATA

Dimensions in mm

Net Mass: 5 g

5.3 max

1.8

16 max

3.5

max

5.3

7.3

3.5

max

seating

plane

15.5

max

2.5

4.0

max

15.5

min

0.9 max

2.2 max

3.2 max

1.1

0.4 M

5.45 5.45

Fig.4. SOT429; pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to mounting instructions for SOT429 envelope.

3. Epoxy meets UL94 V0 at 1/8".

January 1998

Rev 1.000

Philips Semiconductors

Preliminary specification

PowerMOS transistors

Avalanche energy rated

PHP11N50E, PHB11N50E, PHW11N50E

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

January 1998

Rev 1.000

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