PHP12N10E [NXP]

PowerMOS transistor; 功率MOS晶体管


型号：	PHP12N10E
厂家：	NXP
描述：	PowerMOS transistor 功率MOS晶体管晶体晶体管
文件：	总7页 (文件大小：76K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product Specification

PowerMOS transistor

PHP12N10E

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

field-effect power transistor in a

plastic envelope. The device is

intended for use in Switched Mode

Power Supplies (SMPS), motor

control, welding, DC/DC and AC/DC

converters, and in general purpose

switching applications.

SYMBOL

PARAMETER

MAX.

UNIT

V_DS

I_D

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state resistance

100

˚C

Ω

P_tot

T_j

175

0.16

R_DS(ON)

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

tab

gate

drain

source

tab drain

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

±V_GS

I_D

Drain-source voltage

100

Drain-gate voltage

R_GS= 20 kΩ

Gate-source voltage

Drain current (DC)

Drain current (pulse peak value)

Total power dissipation

Storage temperature

Junction Temperature

T_mb= 25 ˚C

T_mb= 100 ˚C

T_mb= 25 ˚C

I_D

I_DM

P_tot

T_stg

T_j

- 55

˚C

175

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction to

K/W

mounting base

Thermal resistance junction to

ambient

September 1997

Rev 1.000

Philips Semiconductors

Product Specification

PowerMOS transistor

PHP12N10E

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_(BR)DSS

Drain-source breakdown

voltage

V_GS= 0 V; I_D= 0.25 mA

100

V_GS(TO)

Gate threshold voltage

V_DS= V_GS; I_D= 1 mA

2.1

3.0

4.0

1.0

100

0.16

µA

Ω

I_DSS

Zero gate voltage drain current V_DS= 100 V; V_GS= 0 V; T_j= 25 ˚C

Zero gate voltage drain current V_DS= 100 V; V_GS= 0 V; T_j= 125 ˚C

Gate source leakage current

Drain-source on-state

resistance

I_DSS

0.1

I_GSS

V_GS= ±30 V; V_DS= 0 V

V_GS= 10 V; I_D= 5 A

R_DS(ON)

0.15

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

g_fs

Forward transconductance

V_DS= 25 V; I_D= 5 A

4.0

5.5

C_iss

C_oss

C_rss

Input capacitance

Output capacitance

Feedback capacitance

V_GS= 0 V; V_DS= 25 V; f = 1 MHz

660

140

825

200

100

t_{d on}

t_r

t_{d off}

t_f

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

V_DD= 30 V; I_D= 3 A;

V_GS= 10 V; R_GS= 50 Ω;

R_gen= 50 Ω

L_d

L_s

Internal drain inductance

Internal source inductance

Measured from contact screw on

tab to centre of die

Measured from drain lead 6 mm

from package to centre of die

Measured from source lead 6 mm

from package to source bond pad

3.5

4.5

7.5

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_DR

Continuous reverse drain

current

I_DRM

V_SD

Pulsed reverse drain current

Diode forward voltage

1.5

I_F= 14 A ; V_GS= 0 V

1.2

t_rr

Q_rr

Reverse recovery time

Reverse recovery charge

I_F= 14 A; -dI_F/dt = 100 A/µs;

V_GS= 0 V; V_R= 30 V

0.6

µC

AVALANCHE LIMITING VALUE

T_mb= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

W_DSS

Drain-source non-repetitive

unclamped inductive turn-off

energy

I_D= 14 A ; V_DD≤ 50 V; V_GS= 10 V ;

R_GS= 50Ω

September 1997

Rev 1.000

Philips Semiconductors

Product Specification

PowerMOS transistor

PHP12N10E

Normalised Power Derating

PD%

120

Zth j-mb / (K/W)

ZTHX53

1E+01

1E+00

1E-01

1E-02

110

100

0.5

0.2

0.1

0.05

0.02

D =

Tmb /

100 120 140 160 180

1E-07

1E-05

1E-03

t / s

1E-01

1E+01

Fig.1. Normalised power dissipation.

PD% = 100 P_D/P_{D 25 ˚C}= f(T_mb)

Fig.4. Transient thermal impedance.

Z_{th j-mb}= f(t); parameter D = t_p/T

Normalised Current Derating

ID%

ID / A

BUK453-100A

120

110

100

VGS / V =

100 120 140 160 180

Tmb /

VDS / V

Fig.2. Normalised continuous drain current.

ID% = 100 I_D/I_{D 25 ˚C}= f(T_mb); conditions: V_GS≥ 10 V

Fig.5. Typical output characteristics, T_j= 25 ˚C.

I_D= f(V_DS); parameter V_GS

ID / A

BUK453-100

tp = 10 us

BUK453-100A

RDS(ON) / Ohm

100

1.0

0.8

0.6

0.4

0.2

5.5

VGS / V =

4.5

6.5

RDS(ON) = VDS/ID

100 us

1 ms

7.5

10 ms

100 ms

0.1

100

VDS / V

ID / A

Fig.3. Safe operating area. T_mb= 25 ˚C

I_D& I_DM= f(V_DS); I_DMsingle pulse; parameter t_p

Fig.6. Typical on-state resistance, T_j= 25 ˚C.

R_DS(ON)= f(I_D); parameter V_GS

September 1997

Rev 1.000

Philips Semiconductors

Product Specification

PowerMOS transistor

PHP12N10E

VGS(TO) / V

ID / A

BUK453-100A

max.

Tj / C =

150

typ.

min.

-60

-20

Tj /

100

140

180

VGS / V

Fig.7. Typical transfer characteristics.

I_D= f(V_GS) ; conditions: V_DS= 25 V; parameter T_j

Fig.10. Gate threshold voltage.

V_GS(TO)= f(T_j); conditions: I_D= 1 mA; V_DS= V_GS

SUB-THRESHOLD CONDUCTION

ID / A

gfs / S

BUK453-100A

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

2 %

typ

98 %

VGS / V

ID / A

Fig.8. Typical transconductance, T_j= 25 ˚C.

g_fs= f(I_D); conditions: V_DS= 25 V

Fig.11. Sub-threshold drain current.

I_D= f(V_GS); conditions: T_j= 25 ˚C; V_DS= V_GS

Normalised RDS(ON) = f(Tj)

C / pF

BUK4y3-100

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

10000

1000

100

Ciss

Coss

Crss

-60

-20

Tj /

100

140

180

VDS / V

Fig.9. Normalised drain-source on-state resistance.

a = R_DS(ON)/R_{DS(ON)25 ˚C}= f(T_j); I_D= 5 A; V_GS= 10 V

Fig.12. Typical capacitances, C_iss, C_oss, C_rss.

C = f(V_DS); conditions: V_GS= 0 V; f = 1 MHz

September 1997

Rev 1.000

Philips Semiconductors

Product Specification

PowerMOS transistor

PHP12N10E

WDSS%

VGS / V

BUK453-100

120

110

100

VDS / V =20

100

120

140

160

180

Tmb /

QG / nC

Fig.13. Typical turn-on gate-charge characteristics.

V_GS= f(Q_G); conditions: I_D= 14 A; parameter V_DS

Fig.15. Normalised avalanche energy rating.

W_DSS% = f(T_mb); conditions: I_D= 14 A

IF / A

BUK453-100A

VDD

VDS

VGS

-ID/100

T.U.T.

Tj / C = 150

R 01

RGS

shunt

VSDS / V

Fig.16. Avalanche energy test circuit.

W_DSS= 0.5 LI_D²BV_DSS/(BV_DSS− V_DD

Fig.14. Typical reverse diode current.

I_F= f(V_SDS); conditions: V_GS= 0 V; parameter T_j

)

September 1997

Rev 1.000

Philips Semiconductors

Product Specification

PowerMOS transistor

PHP12N10E

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

1 2 3

max

(2x)

0,9 max (3x)

0,6

2,4

2,54 2,54

Fig.17. TO220AB; pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to mounting instructions for TO220 envelopes.

3. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.000

Philips Semiconductors

Product Specification

PowerMOS transistor

PHP12N10E

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

September 1997

Rev 1.000

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