PHP33NQ20T [NXP]
N-channel TrenchMOS⑩ standard level FET; N沟道的TrenchMOS ™标准水平FET
| 型号： | PHP33NQ20T |
| 厂家： | 
NXP |
| 描述： | N-channel TrenchMOS⑩ standard level FET |
| 文件： | 总13页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHP/PHB33NQ20T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 8 November 2004
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode field effect transistor in a plastic package
using TrenchMOS™ technology.
1.2 Features
■ Low on-state resistance
■ Low thermal resistance
■ Fast switching
■ Low gate charge.
1.3 Applications
■ DC-to-DC primary side switching.
1.4 Quick reference data
■ VDS ≤ 200 V
■ ID ≤ 32.7 A
■ RDSon ≤ 77 mΩ
■ Qgd = 9.6 nC (typ).
2. Pinning information
Table 1:
Discrete pinning
Pin Description
Simplified outline
Symbol
1
2
3
gate
D
S
mb
mb
[1]
drain
source
G
mb mounting base;
connected to drain
mbb076
2
1
3
1
2 3
SOT78 (TO-220AB)
SOT404 (D2-PAK)
[1] It is not possible to make a connection to pin 2 of the SOT404 package.
PHP/PHB33NQ20T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2:
Ordering information
Type number
Package
Name
Description
Version
PHP33NQ20T
PHB33NQ20T
TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead
TO-220AB
SOT78
D2-PAK
Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead SOT404
cropped)
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
200
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage (DC)
25 °C ≤ Tj ≤ 175 °C
-
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
200
V
-
±20
V
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
-
32.7
23.1
65.4
230
A
-
A
IDM
Ptot
Tstg
Tj
peak drain current
-
A
total power dissipation
storage temperature
junction temperature
-
W
°C
°C
−55
−55
+175
+175
Source-drain diode
IS
source (diode forward) current (DC) Tmb = 25 °C
-
-
32.7
65.4
A
A
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 10.4 A;
tp = 0.14 ms; VDD ≤ 200 V; RGS = 50 Ω;
-
190
mJ
VGS = 10 V; starting at Tj = 25 °C
9397 750 14003
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
2 of 13
PHP/PHB33NQ20T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
03aa16
03aa24
120
120
Ider
(%)
Pder
(%)
80
80
40
0
40
0
0
50
100
150
200
mb (°C)
0
50
100
150
200
Tmb ( C)
°
T
Ptot
ID
Pder
=
× 100%
Ider
=
× 100%
-----------------------
-------------------
P
I
°
°
tot(25 C)
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ao10
102
t = 10
p
s
µ
ID
(A)
100
s
µ
Limit RDSon = VDS / ID
10
DC
1 ms
10 ms
1
10-1
1
10
102
103
VDS (V)
Tmb = 25 °C; IDM is single pulse; VGS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 14003
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
3 of 13
PHP/PHB33NQ20T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
5. Thermal characteristics
Table 4:
Symbol Parameter
Rth(j-mb) thermal resistance from junction to mounting base Figure 4
Thermal characteristics
Conditions
Min
Typ
Max Unit
-
-
0.65 K/W
Rth(j-a)
thermal resistance from junction to ambient
SOT78
vertical in free air
-
-
60
50
-
-
K/W
K/W
SOT404
mounted on a printed-circuit
board; minimum footprint;
vertical in still air
5.1 Transient thermal impedance
03ao09
10
Zth(j-mb)
(K/W)
1
= 0.5
δ
0.2
10-1
0.1
0.05
tp
P
δ =
0.02
T
single pulse
10-2
10-3
t
tp
T
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 14003
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
4 of 13
PHP/PHB33NQ20T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
200
180
-
-
-
-
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage
drain-source leakage current
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
2
1
-
3
-
4
V
V
V
Tj = 175 °C
-
Tj = −55 °C
-
4.4
IDSS
VDS = 160 V; VGS = 0 V
Tj = 25 °C
-
-
-
-
1
µA
µA
nA
Tj = 175 °C
-
500
100
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 15 A; Figure 6 and 8
Tj = 25 °C
10
RDSon
drain-source on-state resistance
-
-
65
77
mΩ
mΩ
Tj = 175 °C
182
215
Dynamic characteristics
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
ID = 25 A; VDS = 100 V; VGS = 10 V;
Figure 11
-
-
-
-
-
-
-
-
-
-
32.2
6.5
9.6
1870
230
70
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 13
VDS = 100 V; RL = 4 Ω;
12
VGS = 10 V; RG = 6 Ω
35
td(off)
tf
turn-off delay time
fall time
43
45
Source-drain diode
VSD
trr
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
-
-
-
0.87 1.2
V
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V
150
645
-
-
ns
nC
Qr
9397 750 14003
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
5 of 13
PHP/PHB33NQ20T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
03ao11
03ao12
40
125
RDSon
(m
10 V 5 V
T = 25
j
C
T = 25 C
°
j
°
ID
)
Ω
(A)
4.6 V
VGS = 4.4 V
4.6 V
30
100
5 V
4.4 V
4.2 V
20
10
0
75
10 V
50
4 V
VGS = 3.8 V
25
0
1
2
3
4
5
0
10
20
30
40
VDS (V)
ID (A)
Tj = 25 °C
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values.
03ao13
03al52
40
ID
3
VDS > ID x RDSon
(A)
a
30
2
20
1
0
175
C
°
T = 25 C
°
j
10
0
0
2
4
6
-60
0
60
120
180
VGS (V)
Tj (°C)
Tj = 25 °C and 175 °C; VDS > ID × RDSon
RDSon
a =
----------------------------
RDSon(25 C)
°
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 14003
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
6 of 13
PHP/PHB33NQ20T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
03aa32
03aa35
5
VGS(th)
(V)
10-1
ID
(A)
10-2
4
max
min
typ
max
3
10-3
10-4
10-5
10-6
typ
min
2
1
0
-60
0
60
120
180
0
2
4
6
V
GS (V)
T ( C)
°
j
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ao16
10
ID = 25 A
T = 25
VGS
(V)
C
°
j
8
6
4
2
0
100 V
160 V
VDS = 40 V
0
10
20
30
40
Q
G (nC)
ID = 25 A; VDS = 40 V, 100 V and 160 V
Fig 11. Gate-source voltage as a function of gate charge; typical values.
9397 750 14003
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
7 of 13
PHP/PHB33NQ20T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
03ao14
03ao15
40
104
VGS = 0 V
IS
C
(pF)
(A)
Ciss
30
103
20
10
Coss
102
Crss
175
C
°
T = 25
j
C
°
0
10
10-1
0
0.3
0.6
0.9
1.2
1
10
102
VDS (V)
VSD (V)
Tj = 25 °C and 175 °C; VGS = 0 V
VGS = 0 V; f = 1 MHz
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 14003
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
8 of 13
PHP/PHB33NQ20T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
base
D
1
D
(1)
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
(1)
2
e
A
b
D
E
L
D
L
1
A
1
c
UNIT
p
q
Q
1
1
4.5
4.1
1.39
1.27
0.9
0.6
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
01-02-16
03-01-22
SOT78
3-lead TO-220AB
SC-46
Fig 14. SOT78 (TO-220AB) package outline.
9397 750 14003
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
9 of 13
PHP/PHB33NQ20T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
2
Plastic single-ended surface mounted package (D -PAK); 3 leads (one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
01-02-12
04-10-13
SOT404
Fig 15. SOT404 (D2-PAK) package outline.
9397 750 14003
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
10 of 13
PHP/PHB33NQ20T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
8. Revision history
Table 6:
Revision history
Document ID
Release Data sheet Change
Doc. number
Supersedes
date
20041108 Product
data sheet
status
notice
PHP_PHB33NQ20T_1
-
9397 750 14003
-
9397 750 14003
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
11 of 13
PHP/PHB33NQ20T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
9. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
10. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14003
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
12 of 13
PHP/PHB33NQ20T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information . . . . . . . . . . . . . . . . . . . . 12
3
4
5
5.1
6
7
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 8 November 2004
Document number: 9397 750 14003
Published in The Netherlands
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