PIMH9 [NXP]
NPN resistor-equipped double transistor; R1 = 10 kohm, R2 = 47 kohm; NPN电阻配备双晶体管; R1 = 10千欧， R2 = 47千欧
| 型号： | PIMH9 |
| 厂家： | 
NXP |
| 描述： | NPN resistor-equipped double transistor; R1 = 10 kohm, R2 = 47 kohm |
| 文件： | 总8页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
PIMH9
NPN resistor-equipped double
transistor; R1 = 10 kΩ, R2 = 47 kΩ
Product specification
2001 Sep 13
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor;
R1 = 10 kΩ, R2 = 47 kΩ
PIMH9
FEATURES
QUICK REFERENCE DATA
• Transistors with built-in bias resistors (R1 typ. 10 kΩ and
R2 typ. 47 kΩ)
SYMBOL
PARAMETER
MAX. UNIT
VCEO
ICM
R1
collector-emitter voltage
peak collector current
bias resistor
50
V
• No mutual interference between the transistors
• Simplification of circuit design
100
10
mA
kΩ
kΩ
• Reduces number of components and board space.
R2
bias resistor
47
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
6
5
4
handbook, halfpage
6
5
2
4
3
R1 R2
TR2
TR1
DESCRIPTION
R2 R1
NPN resistor-equipped double transistor in an SC-74
(SOT457) plastic package.
1
Top view
1
2
3
MAM449
MARKING
Fig.1 Simplified outline (SC-74; SOT457) and
symbol.
TYPE NUMBER
PIMH9
MARKING CODE
H9
PINNING
PIN
DESCRIPTION
2, 5
6, 3
1, 4
2, 5
6, 3
emitter
base
TR1; TR2
TR1; TR2
TR1; TR2
1, 4
MBK120
collector
Fig.2 Equivalent inverter symbol.
2001 Sep 13
2
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor;
R1 = 10 kΩ, R2 = 47 kΩ
PIMH9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
open emitter
−
−
−
50
V
V
V
open base
50
10
open collector
positive
−
−
−
−
−
+40
−10
100
100
300
+150
150
+150
V
V
negative
IO
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
mA
mA
mW
°C
ICM
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
°C
Tamb
−65
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
600
mW
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
208
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2001 Sep 13
3
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor;
R1 = 10 kΩ, R2 = 47 kΩ
PIMH9
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per transistor
ICBO
ICEO
collector-base cut-off current
collector-emitter cut-off current
VCB = 50 V; IE = 0
VCE = 50 V; IB = 0
CE = 30 V; IB = 0; Tj = 150 °C
−
−
100
1
nA
µA
µA
µA
−
−
V
−
−
50
150
−
IEBO
hFE
emitter-base cut-off current
DC current gain
saturation voltage
input off voltage
input on voltage
input resistor
VEB = 5 V; IC = 0
−
−
VCE = 5 V; IC = 5 mA
IC = 5 mA; IB = 0.25 mA
VCE = 5 V; IC = 100 µA
VCE = 0.3 V; IC = 1 mA
100
−
−
VCEsat
Vi(off)
Vi(on)
R1
−
100
0.5
−
mV
V
−
0.7
0.8
10
4.7
1.4
7
V
13
5.7
kΩ
resistor ratio
3.7
R2
-------
R1
Cc
collector capacitance
IE = ie = 0; VCB = 10 V;
f = 1 MHz
−
−
2.5
pF
2001 Sep 13
4
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor;
R1 = 10 kΩ, R2 = 47 kΩ
PIMH9
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
01-05-04
SOT457
SC-74
2001 Sep 13
5
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor;
R1 = 10 kΩ, R2 = 47 kΩ
PIMH9
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Sep 13
6
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor;
R1 = 10 kΩ, R2 = 47 kΩ
PIMH9
NOTES
2001 Sep 13
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2001 Sep 13
Document order number: 9397 750 08539
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