PMBF170-T [NXP]
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| 型号： | PMBF170-T |
| 厂家： | 
NXP |
| 描述： | 暂无描述 晶体 晶体管 开关 光电二极管 |
| 文件： | 总8页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF170
N-channel enhancement mode
vertical D-MOS transistor
April 1995
Product specification
File under Discrete Semiconductors, SC13b
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
PMBF170
DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
vertical D-MOS transistor in a SOT23
envelope. Designed for use as a
Surface Mounted Device (SMD) in
thin and thick-film circuits with
applications in relay, high-speed and
line transformer drivers.
Drain-source voltage
VDS
max.
60 V
20 V
Gate-source voltage (open drain)
Drain current (DC)
± VGSO max.
ID
max.
250 mA
Total power dissipation up
to Tamb = 25 °C
Ptot
max.
300 mW
Drain-source on-resistance
ID = 200 mA; VGS = 10 V
typ.
max.
2.5 Ω
5.0 Ω
RDS(on)
Transfer admittance
min.
typ.
100 mS
200 mS
FEATURES
| Yfs|
ID = 200 mA; VDS = 10 V
• Direct interface to C-MOS, TTL,
etc.
PINNING - SOT23
• High-speed switching
1
2
3
= gate
• No secondary breakdown
= source
= drain
Marking code:
PMBF170 = PKX
PIN CONFIGURATION
d
s
handbook, halfpage
3
g
1
2
MBB076 - 1
Top view
MSB003
Fig.1 Simplified outline and symbol.
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
PMBF170
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
VDS
± VGSO
ID
max.
max.
max.
max.
60 V
20 V
Gate-source voltage (open drain)
Drain current (DC)
250 mA
500 mA
Drain current (peak)
IDM
Total power dissipation up to
max.
max.
300 mW (note 1)
250 mW (note 2)
Tamb = 25 °C (note 1)
Ptot
Tstg
Tj
Storage temperature range
Junction temperature
−65 to +150 °C
max.
150 °C
THERMAL RESISTANCE
From junction to ambient (note 1)
From junction to ambient (note 2)
Rth j-a
Rth j-a
=
=
430 K/W
500 K/W
Notes
1. Mounted on ceramic substrate measuring 10 mm × 8 mm × 0.7 mm.
2. Mounted on printed-circuit board.
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
PMBF170
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Drain-source breakdown voltage
min.
typ.
60 V
90 V
ID = 10 µA; VGS = 0
V(BR) DSS
Drain-source leakage current
V
DS = 25 V; VGS = 0
IDSS
IDSS
max.
max.
500 nA
VDS = 48 V; VGS = 0
Gate-source leakage current
VGS = 15 V; VDS = 0
1 µA
IGSS
max.
10 nA
Gate-source cut-off voltage
ID = 1 mA; VDS = VGS
min.
max.
0.8 V
3.0 V
VGS(th)
Drain-source on-resistance
ID = 200 mA; VGS = 10 V
typ.
max.
2.5 Ω
5.0 Ω
RDS(on)
Transfer admittance
min.
typ.
100 mS
200 mS
ID = 200 mA; VDS = 10 V
Yfs
Input capacitance
typ.
max.
25 pF
40 pF
VDS = 10 V; VGS = 0 V; f = 1 MHz
Ciss
Output capacitance
typ.
max.
22 pF
30 pF
VDS = 10 V; VGS = 0 V; f = 1 MHz
Coss
Feedback capacitance
typ.
max.
6 pF
10 pF
VDS = 10 V; VGS = 0 V; f = 1 MHz
Crss
Switching times
ton
toff
max.
max.
10 ns
15 ns
VGS = 0 to 10 V; ID = 200 mA ; VDD = 50 V
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
PMBF170
V
= 50 V
handbook, halfpage
DD
handbook, halfpage
INPUT
90 %
10 %
90 %
10 V
0 V
I
D
OUTPUT
50 Ω
10 %
MSA631
t
t
off
on
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
April 1995
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
PMBF170
PACKAGE OUTLINES
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
April 1995
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
PMBF170
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
7
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© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/00/02/pp8
Date of release: April 1995
Document order number: 9397 750 02504
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