PMBF170TRL13 [NXP]
TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal;型号: | PMBF170TRL13 |
厂家: | NXP |
描述: | TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
文件: | 总13页 (文件大小:277K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMBF170
N-channel enhancement mode field-effect transistor
Rev. 03 — 23 June 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PMBF170 in SOT23.
2. Features
■ TrenchMOS™ technology
■ Very fast switching
■ Logic level compatible
■ Subminiature surface mount package.
3. Applications
■ Relay driver
■ High speed line driver
■ Logic level translator.
c
c
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
3
d
2
source (s)
drain (d)
3
g
03ab44
03ab30
s
1
2
SOT23
N-channel MOSFET
1. TrenchMOS is a trademark of Royal Philips Electronics.
PMBF170
N-channel enhancement mode field-effect transistor
Philips Semiconductors
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
60
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
Tj = 25 to 150 °C
Tsp = 25 °C; VGS = 10 V
Tsp = 25 °C
−
300
0.83
150
5
mA
W
Ptot
Tj
total power dissipation
junction temperature
−
−
°C
Ω
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 500 mA
VGS = 4.5 V; ID = 75 mA
2.8
3.8
5.3
Ω
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−
Max
60
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage (DC)
Tj = 25 to 150 °C
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
Tj = 25 to 150 °C; RGS = 20 kΩ
−
60
V
−
±20
300
V
Tsp = 25 °C; VGS = 10 V;
−
mA
Figure 2 and 3
T
sp = 100 °C; VGS = 10 V; Figure 2
−
−
190
1.2
mA
A
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tsp = 25 °C; Figure 1
−
0.83
W
−65
−65
+150
+150
°C
°C
operating junction temperature
Source-drain diode
IS
source (diode forward) current (DC)
peak source (diode forward) current
Tsp = 25 °C
−
−
300
1.2
mA
A
ISM
Tsp = 25 °C; pulsed; tp ≤ 10 µs
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 — 23 June 2000
2 of 13
PMBF170
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa17
03aa25
120
120
(%)
I
der
P
100
80
60
40
20
0
100
80
60
40
20
0
der
(%)
0
25
50
75
T
100 125 150 175
( C)
0
25
50
75
100 125 150 175
o
o
sp
T
( C)
sp
V
GS ≥ 4.5 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
Ider
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03aa03
10
I
o
= 25 C
D
T
sp
(A)
t
= 10 µs
p
1
R
t
= V / I
DS
DSon
D
100 µs
1 ms
p
P
δ =
-1
10
T
10 ms
D.C.
100 ms
t
t
p
T
-2
10
2
10
1
10
V
(V)
DS
Tsp = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 — 23 June 2000
3 of 13
PMBF170
N-channel enhancement mode field-effect transistor
Philips Semiconductors
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(j-sp)
thermal resistance from junction to solder
point
mounted on a metal clad substrate;
Figure 4
150
K/W
Rth(j-a)
thermal resistance from junction to ambient
mounted on a printed circuit board;
minimum footprint
350
K/W
7.1 Transient thermal impedance
03aa01
3
10
Z
th(j-sp)
K/W
δ = 0.5
2
10
10
1
0.2
0.1
t
p
0.02
P
δ
=
T
0.05
single pulse
t
t
p
T
-1
10
-5
-4
-3
10
-2
10
-1
10
10
10
1
10
t
(s)
p
Mounted on metal clad substrate.
Fig 4. Transient thermal impedance from junction to solder point as a function of
pulse duration.
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 — 23 June 2000
4 of 13
PMBF170
N-channel enhancement mode field-effect transistor
Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Static characteristics
V(BR)DSS drain-source breakdown
voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 10 µA; VGS = 0 V
Tj = 25 °C
60
55
75
−
−
V
V
Tj = −55 °C
−
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS
Figure 9
;
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
1
2
−
−
−
V
V
V
0.6
−
−
3.5
IDSS
drain-source leakage current VDS = 48 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
−
−
0.01
1.0
10
µA
µA
−
VDS = 25 V; VGS = 0 V
Tj = 25 °C
−
−
5
500
100
nA
nA
IGSS
gate-source leakage current VGS = ±15 V; VDS = 0 V
10
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 500 mA;
Figure 7 and 8
Tj = 25 °C
−
−
2.8
5
Ω
Ω
Tj = 150 °C
−
9.25
VGS = 4.5 V; ID = 75 mA;
Figure 7 and 8
Tj = 25 °C
−
3.8
5.3
Ω
Dynamic characteristics
gfs
forward transconductance
VDS = 10 V; ID = 200 mA;
Figure 11
100
300
−
mS
Ciss
Coss
Crss
ton
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
VGS = 0 V; VDS = 10 V;
f = 1 MHz; Figure 12
−
−
−
−
−
25
18
7.5
3
40
30
10
10
15
pF
pF
pF
ns
ns
VDD = 50 V; RD = 250 Ω;
VGS = 10 V; RG = 50 Ω;
RGS = 50 Ω
toff
turn-off time
12
Source-drain diode
VSD
source-drain (diode forward) IS = 300 mA; VGS = 0 V;
−
0.85
1.5
V
voltage
Figure 13
trr
reverse recovery time
recovered charge
IS = 300 mA;
dIS/dt = −100 A/µs;
VGS = 0 V; VDS = 25 V
−
−
30
30
−
−
ns
Qr
nC
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 — 23 June 2000
5 of 13
PMBF170
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa06
03aa04
0.8
(A)
1
(A)
I
V
> I X R
DS
o
D
DSon
D
I
T = 25 C
j
D
0.7
0.8
V
= 10 V
GS
0.6
0.5
0.4
0.3
0.2
0.1
0
o
T = 25 C
j
o
150 C
0.6
0.4
0.2
0
4.5 V
4 V
3.5 V
3 V
0
0.4
0.8
V
1.2
(V)
1.6
2
0
1
2
3
4
(V)
5
6
7
V
DS
GS
Tj = 25 °C
Tj = 25 °C and 150 °C; VDS ≥ ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aa05
03aa28
10
2.2
R
(Ω)
3 V
o
a
DSon
3.5V
T = 25 C
j
2
9
1.8
1.6
1.4
1.2
1
8
7
6
5
4
3
2
1
0
4 V
4.5 V
0.8
0.6
0.4
0.2
0
V
= 10 V
GS
-60
-20
20
60
o
100
140
180
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
(A)
I
T ( C)
D
j
Tj = 25 °C
RDSon
a =
---------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 — 23 June 2000
6 of 13
PMBF170
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa34
03aa37
3
-1
10
I
V
(V)
D
GS(th)
2.5
(A)
-2
10
typ
2
min
typ
-3
-4
-5
-6
10
10
10
10
1.5
1
min
0.5
0
-60
-20
20
60
100
140
180
0
0.5
1
1.5
V
2
2.5
3
o
T ( C)
(V)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03aa07
0.5
03aa09
g
(S)
0.45
2
V
> I X R
DS
10
fs
D
DSon
C
, C
o
iss oss
T = 25 C
j
0.4
C
(pF)
rss
0.35
0.3
o
150 C
C
iss
0.25
0.2
10
C
oss
0.15
0.1
C
rss
10
0.05
0
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
(A)
-1
10
2
1
10
V
(V)
I
DS
D
Tj = 25 °C and 150 °C; VDS ≥ ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 — 23 June 2000
7 of 13
PMBF170
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa08
1
V
= 0 V
GS
I
(A)
S
0.8
0.6
0.4
0.2
0
o
150 C
o
T = 25 C
j
0
0.2
0.4
0.6
SD
0.8
1
1.2
V
(V)
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
voltage; typical values.
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 — 23 June 2000
8 of 13
PMBF170
N-channel enhancement mode field-effect transistor
Philips Semiconductors
9. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
p
c
D
E
e
e
H
L
Q
v
w
A
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
Fig 14. SOT23.
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 — 23 June 2000
9 of 13
PMBF170
N-channel enhancement mode field-effect transistor
Philips Semiconductors
10. Revision history
Table 6: Revision history
Rev Date
CPCN
Description
03 20000622 HZG303
Product specification; third version; supersedes PMBF170_CNV_2 of 970623.
Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove).
Product specification; second version.
02 19970623
01 19901031
-
-
Product specification; initial version.
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 — 23 June 2000
10 of 13
PMBF170
N-channel enhancement mode field-effect transistor
Philips Semiconductors
11. Data sheet status
[1]
Datasheet status
Product status Definition
Development
Objective specification
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 07208
© Philips Electronics N.V. 2000 All rights reserved.
Product specification
Rev. 03 — 23 June 2000
11 of 13
PMBF170
N-channel enhancement mode field-effect transistor
Philips Semiconductors
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For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
Internet: http://www.semiconductors.philips.com
(SCA69)
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 — 23 June 2000
12 of 13
PMBF170
N-channel enhancement mode field-effect transistor
Philips Semiconductors
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 23 June 2000
Document order number: 9397 750 07208
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